ZnSe和Cr∶ ZnSe单晶的温梯法制备及光学性能研究

人工晶体学报, 2011, 40(4): 848-852.

ZnSe和Cr∶ ZnSe单晶的温梯法制备及光学性能研究

张浩 ^1, , 李琳 ^2, , 宋平新 ^3, , 张迎九 ^4, , 冷雨欣 ^5, , 许毅 ^6, , 董永军 ^7,

1.郑州大学物理工程学院,郑州450052

2.郑州大学物理工程学院,郑州450052

3.郑州大学物理工程学院,郑州450052

4.郑州大学物理工程学院,郑州450052

5.中国科学院上海光学精密机械研究所强场激光物理国家重点实验室,上海201800

6.中国科学院上海光学精密机械研究所强场激光物理国家重点实验室,上海201800

7.中国科学院上海光学精密机械研究所强场激光物理国家重点实验室,上海201800

关键词： ZnSe , Cr∶ZnSe , 温度梯度法(TGT) , 中红外

Preparation and Optical Properties of ZnSe and Cr∶ ZnSe Single Crystal Grown by Temperature Gradient Technique

采用温度梯度法(TGT)生长了直径为32 mm大尺寸ZnSe晶体.对生长出的ZnSe单晶进行了光学性能分析.采用磁控溅射方法在ZnSe晶体上镀铬膜,通过热扩散方法成功制备出中红外Cr∶ ZnSe激光晶体,并研究了Cr∶ZnSe晶体的光谱性能.吸收光谱测试观察到了Cr2+(3d4)取代四面体配位Zn2的5T2→5E能级的跃迁在1800nm的吸收带.77 K低温的光致发光光谱表明Cr∶ ZnSe晶体具有中心波长位于2.2 μm的宽谱带发射特征.

参考文献

[1]	杜园园,介万奇,李焕勇.一维ZnE（E=S, Se）网状微米晶须的化学气相合成及生长机理研究[J].人工晶体学报,2009(04):861-865.
[2]	Wagner Gregory J.;Carrig Timothy J.;Page Ralph H.;Schaffers Kathleen I.;Ndap Jean-Oliver;Ma Xiaoyan;Burger Arnold .Continuous-wave broadly tunable Cr2~(:)ZnSe laser[J].Optics Letters,1999(1):19-0.
[3]	Sorokin E;Sorokina I T .Tunable Diode-pumped Continuous-wave Cr2 +:ZnSe Laser[J].Applied Physics Letters,2002,80(18):3289-3292.
[4]	杭寅,徐剑秋,杨勇,张连翰.Cr2+：ZnSe激光晶体在中红外波段获得瓦级输出[J].中国激光,2007(04):587.
[5]	Page R.H.;Schaffers K.I. .Cr/sup 2+/-doped zinc chalcogenides as efficient, widely tunable mid-infrared lasers[J].IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society,1997(4):609-619.
[6]	Carrig TJ.;Sennaroglu A.;Jeong JY.;Pollock CR.;Wagner GJ. .Mode-locked Cr2+: ZnSe laser[J].Optics Letters,2000(3):168-170.
[7]	Sorokina IT.;Di Lieto A.;Tonelli M.;Page RH.;Schaffers KI.;Sorokin E. .Efficient broadly tunable continuous-wave Cr2+: ZnSe laser[J].Journal of the Optical Society of America, B. Optical Physics,2001(7):926-930.
[8]	Page R H;Skidmore J A;Schaffers K I.Demonstrations of Diode-pumped and Grating-tuned ZnSe: Cr2+ Laser[A].,1997:208-210.
[9]	Carrig T J;Wagner G J;Alford W J et al.Chromium-doped Chalcogenide Lasers,in Solid State Lasers and Amplifiers[J].SPIE,2004,5460:74-82.
[10]	Jifeng Wang;Taiki Miyano;Minoru Isshiki .Behavior of arsenic in ZnSe grown by a closed Bridgman method[J].Materials Letters,2008(6/7):820-823.
[11]	Wang JF.;Isshiki M.;Omino A. .Melt growth of twin-free ZnSe single crystals[J].Journal of Crystal Growth,2000(0):875-879.
[12]	Fujiwara S;Namikawa Y;Nakamura T et al.Growth of Large ZnSe Single Crystal by R-CVTMethod[J].Journal of Crystal Growth,2005,275(3-4):415-419.
[13]	Huanyong Li;Wanqi Jie .Growth and characterizations of bulk ZnSe single crystal by chemical vapor transport[J].Journal of Crystal Growth,2003(1/2):110-115.
[14]	张旭,李卫,张力强,丁进,王坤.低位错ZnSe单晶的生长[J].人工晶体学报,2006(02):385-387.
[15]	余文涛,李焕勇,介万奇,刘正堂.开放体系优化ZnSe多晶原料化学计量比[J].人工晶体学报,2010(02):313-317.
[16]	李文渭,李焕勇,介万奇.单质直接气相生长ZnSe单晶[J].人工晶体学报,2008(05):1051-1055.
[17]	Rzepka E.;Lemasson P.;Triboulet R.;Roger JP. .Optical transmission of ZnSe crystals grown by solid phase recrystallization[J].Journal of Crystal Growth,1999(3):480-484.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

ZnSe和Cr∶ ZnSe单晶的温梯法制备及光学性能研究

Preparation and Optical Properties of ZnSe and Cr∶ ZnSe Single Crystal Grown by Temperature Gradient Technique

参考文献