对经过前期提纯的冶金级硅料进行一次性定向凝固生长多晶硅铸锭，研究了长晶阶段降温速率对多晶硅少子寿命的影响。结果显示降温速率越低，获得多晶硅少子寿命越高，但降温速率低到一定程度时，少子寿命反而会降低。通过测试生长多晶硅硅锭曲率半径、晶体结构等数据，分析了该现象的产生原因。这将有助于升级冶金硅一次性定向凝固生长多晶硅铸锭的生产应用。
According to multicrystalline silicon ( mc-Si ) ingots cast by one-step directional solidification growth with the pre-purification metallurgical grade silicon feedback, the effect of cooling rate on the minority carrier lifetime of mc-Si ingots can be known. In the study, using a lower cooling rate during growth process of mc-Si ingots, a higher lifetime on the mc-Si ingots can be obtained. But when the cooling rate is low to a certain degree, the minority carrier lifetime of mc-Si ingots reduces. The cause of the phenomenon is analyzed by measuring the curvature radius and the crystal structure of the grown mc-Si ingot. This phenomenon can be used to guide the production applications of metallurgical route with one-step directional solidification growth of mc-Si ingots.
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