以甲基三氯硅烷为原料，FeCl3或Ni（NO3）2为催化剂，采用催化化学气相沉积工艺，在C／C-SiC复合材料表面原位制备出SiC晶须；研究了温度、催化剂对制备SiC晶须的影响。结果表明：1050℃为制备SiC晶须的最佳温度；FeCl3催化生长的SiC晶须较细，直径为1．5～1．8μm，晶须表面光滑，直晶率高；Ni（N03）2催化制备的SiC晶须较粗，直径为2．0～2．5μm，晶须表面粗糙，晶须交互生长，弯晶率高；晶须生长机理为气液固（VLS）机理。
Taking methyl trichlorosilane as raw material, FeCla or Ni （NO3）2 as catalyst, the SiC whiskers were prepared on C/C-SiC composite surface by catalytic chemical vapor deposition process. The influences of temperature and catalyst on preparation of SiC whiskers were studied. The results show that 1 050℃ was the optimum temperature to preparation whisker. The surface of the whisker was smooth, the diameter was 1.5-- 1.8 μm, and straight whiskers ratio was high when the catalyst was FeCl3 solution. While the surface of the whisker was rough, the diameter was 2.0--2. 5μm, and curving whiskers ratio was high when the catalyst was Ni（NO3）2 solution. The SiC whiskers grew via vapor-liquid solid （VLS） mechanism.
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