研究ＫＴｉＯＡｓＯ4晶体的生长缺陷，对于改善它的性能和应用前景，有很大的意义．本文利用化学腐蚀光学显微术和同步辐射Ｘ射线形貌术研究了ＫＴｉＯＡｓＯ４晶体的缺陷，实验结果表明，两种腐蚀剂对于显示ＫＴＡ晶体的表面缺陷效果显著，ＫＴＡ晶体中主要的缺陷有铁电畴、生长层、扇形界、位错和包裹物．讨论了这些缺陷形成的原因。
It is significant to research the growth defects of KTiOAsO4 crystal in order to improve its physical properties and applications. The growth defects of KTA were studied by the methods of optical micrography and synchrotron radiation topography. The result indicates that two kinds of etchant produce a marked effect to show the defects of KTA crystal, and the main defects in KTA crystal are ferroelectric domain, growth striation, sector boundary, dislocation and inclusion. The forming cause of the defects was also discussed.
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