HgI2晶体最低生长温度的确定

人工晶体学报, 2012, 41(5): 1195-1199.

HgI2晶体最低生长温度的确定

许岗 ^1, , 谷智 ^2, , 坚增运 ^3, , 惠增哲 ^4, , 刘翠霞 ^5, , 张改 ^6,

1.西安工业大学材料与化工学院,西安710032

2.西北工业大学凝固技术国家重点实验室,西安710072

3.西安工业大学材料与化工学院,西安710032

4.西安工业大学材料与化工学院,西安710032

5.西安工业大学材料与化工学院,西安710032

6.西安工业大学材料与化工学院,西安710032

基金项目: 西北工业大学基础研究基金(JC20110244) 西安工业大学凝固理论与功能材料科研创新团队基金国家自然科学基金(51071115,51072155)

关键词：碘化汞 , 物理气相沉积 , 最低生长温度

Study on the Lowest Growth Temperature of Mercuric Iodide Crystal

为确定HgI2晶体的最佳生长温度,根据邻位面生长的台阶动力学,推导出HgI2分子在(001)面扩散激活能ESD约为0.33 eV,进而采用物理气相沉积法的基本理论推算了不同升华温度T1下HgI2晶体生长的最低温度Tmin.结果表明,计算结果与实际晶体生长温度基本一致.该结果为HgI2单晶体、多晶薄膜、单晶薄膜沉积工艺的优化提供了依据.

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材料期刊网

HgI2晶体最低生长温度的确定

Study on the Lowest Growth Temperature of Mercuric Iodide Crystal

参考文献