综述了PbSe薄膜的制备方法,比较了各种制备方法的优点.重点探讨了温度、薄膜厚度和缓冲层对PbSe薄膜质量的影响.概述了PbSe薄膜在红外探测器和激光器方面的应用,指出了PbSe薄膜现存的问题及今后工作的重点和方向.
参考文献
| [1] | 王季陶.半导体材料[M].北京:高等教育出版社,1990:571. |
| [2] | BardeenW J;Brattain H .[J].Physical Review,1949,74:1208. |
| [3] | Bloch F .[J].Zeitschrift Für Physik,1928,52:535. |
| [4] | 黄昆.半导体物理学[M].北京:科学出版社,1958 |
| [5] | 苏君红,郑为建.红外线的二百年--从科学探索到技术创新[J].红外技术,2001(01):1-2. |
| [6] | 顾祖毅.半导体物理学[M].北京:电子工业出版社,1995 |
| [7] | Feit Z;Mc Donald M;Woods R J et al.[J].Applied Physics Letters,1996,69(04):2882. |
| [8] | Shi Z;Tacke M;L ambrecht A et al.[J].Applied Physics Letters,1995,66(19):2537. |
| [9] | Ma Jianxin;Yu Jia;Song Youlin et al.[J].Surface Science Spectra,2004,551:91. |
| [10] | GeogakilasA et al.[J].Materials Science in Semiconductor Processing,2003,3(5-6):511. |
| [11] | Mohammad S N;Kim W;Salvador A.[J].MRS Bulletin,1997:22. |
| [12] | 李娜,李宁,陆卫,窦红飞,陈张海,刘兴权,沈学础,H.H.Tan,Lan Fu,C.Jagadish,M.B.Johnston,M.Gal.MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较*[J].半导体学报,2000(05):441-444. |
| [13] | Muller P.;John J.;Tiwari AN.;Zogg H.;Kostorz G.;Fach A. .STRUCTURE OF EPITAXIAL PBSE GROWN ON SI(111) AND SI(100) WITHOUT A FLUORIDE BUFFER LAYER[J].Journal of Applied Physics,1996(4):1911-1916. |
| [14] | Strecker B N;Mccann P J;Fang X M .[J].Journal of Electronic Materials,1997,26(05):444. |
| [15] | Sachar H K;Chao I;McCann P J et al.[J].Journal of Applied Physics,1999,85(10):7398. |
| [16] | 金进生,吴惠桢,常勇,寿翔,X.M.Fang,P.J.Mc Cann.硅基PbSe/BaF2/CaF2薄膜及其光电特性[J].红外与毫米波学报,2001(02):154-156. |
| [17] | Luc Beaunier;Hubert Cachet;Robert Cortes;Michel Froment .Electrodeposition of PbSe epitaxial films on (111) InP[J].Electrochemistry communications,2000(7):508-510. |
| [18] | Grozdanov I;Najdoski M;Dey S K .[J].Materials Letters,1999,38:28. |
| [19] | Dmitry K Ivanov;Nikolay P Osipovich;Sergey K Poznyak et al.[J].Surface Science Spectra,2003,532-535:1092. |
| [20] | 吴自勤;王兵.薄膜生长[M].北京:科学出版社,2001 |
| [21] | Roman T. Rumianowski;Roman S. Dygdala;Wojciech Jung;Waclaw Bala .Growth of PbSe thin films on Si substrates by pulsed laser deposition method[J].Journal of Crystal Growth,2003(1/3):230-235. |
| [22] | Raman Vaidyanathan;John L. Stickney;Uwe Happek .Quantum confinement in PbSe thin films electrodeposited by electrochemical atomic layer epitaxy (EC-ALE)[J].Electrochimica Acta,2004(8):1321-1326. |
| [23] | Rogacheva E I et al.[J].Journal of Electronic Materials,2002,31(04):298. |
| [24] | Baleva M;Mateeva E;Trifnova E P .[J].Journal of Materials Science,1999,34:795. |
| [25] | 王守武.半导体器件研究与进展[M].北京:科学出版社,1991 |
| [26] | Soref R A et al.[J].Electronics Letters,1985,21:953. |
| [27] | Breton G.;Gautier C.;Cambon M.;Masri P.;Charar S. Averous M.;Touhari F.;Ribes VD.;Nouaoura M. .Study of the first stage of PbSe growth on Se-terminated CaF2 surface[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1998(0):82-86. |
| [28] | Gautier C.;Breton G.;Nouaoura M.;Averous M.;Cambon M. .Optimization of MBE p-PbSe/Si (111) growth[J].Journal of Crystal Growth,1999(0):1049-1052. |
| [29] | Tetyorkin V V;Sipatov A Yu;Sizov F F .[J].Infrared Physics & Technology,1996,37:379. |
| [30] | 王建勋,张东洋.红外有源干扰技术分析[J].制导与引信,2003(02):46-49,60. |
| [31] | 付伟.导弹逼近红外告警技术分析[J].红外技术,2002(06):17-20. |
| [32] | 刘惠贞,赵汉斌.同时测量大气中二氧化碳和水汽浓度的红外气体分析仪[J].中国仪器仪表,2003(11):17-19. |
| [33] | 胡卫东.用发光二极管实现的双通道、双色红外CO2分析仪[J].红外技术,2003(05):89-92. |
| [34] | 熊宝库.一种利用激光作为光源实现的光谱发射率测量装置[J].激光杂志,2004(01):74-76. |
| [35] | 高国龙.[J].红外,2003(03):275. |
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