采用在铁基触媒中加入硼铁粉的方法制成Fe-Ni-C-B系触媒,用静压法合成含硼金刚石。研究了含硼金刚石的形貌、晶体结构和电阻-温度曲线。实验结果表明,在不同温度区间内,金刚石具有不同的电离能,分析了其原因。同时测得此含硼金刚石的最高工作温度为773K左右。为高温半导体金刚石的研究提供了实验基础。
In present paper,boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst.The morphology,crystal structure,resistance-temperature characteristic curve were studied.Experiments proved that the boron-doped diamond has different ionization energy at different temperature range and the reason is analyzed.The maximum operating temperature is about 773K for such boron-doped diamond.This study provides an experimental basis for high-temperature semiconductor diamond.
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