用低频内耗方法,结合简谐侧应力-超声衰减实验,详细地研究了纯Al的P_c内耗峰及其背底,对其机理提出了新的解释:P_c内耗峰是由于位错拖曳可动的点缺陷(PD_1)而引起的,而其背底内耗是由于位错从可动点缺陷PD_1脱钉(低于150K时)和从不可动的点缺陷(PD_2)脱钉(高于150K时)而引起的。
Based on a detailed Study of the internal friction peak P_c and its background in pure Al by means of torsion pendulum and harmonic bias stress experiments, a new interpretation of the interaction mechanisms between dislocations and immobile point defects and mobile defects is presented.
参考文献
| [1] | |
| [2] | |
| [3] |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%