采用（Ｓｉ＋Ｍｏ）合金浸渗反应烧结ＳｉＣ，以难熔ＭｏＳｉ_２作为第二相取代ＲＢ－ＳｉＣ中的游离Ｓｉ，从而获得ＲＢ－ＳｉＣ／ＭｏＳｉ_２复合材料．实验结果表明，ＭｏＳｉ_２均匀、连续地分布于ＳｉＣ颗粒界面处，形成连续网络．界面是由ｔ－ＭｏＳｉ_２和β－ＳｉＣ两相交错重叠所构成．界面层处未观察到反应层和非晶态物质，过渡层厚约５ｎｍ．
The RB-SiC/MoSi_2 composite was prepared by infiltration of Mo-Si melt, foaming MoSi_2 as a secondary phase, instead of residual Si in order to prevent the damage over 1400 ℃. Observations under SEM, TEM and HREM on the interface feature of the RB-SiC/MoSi_2 composite had shown that the uniform and continous network distributed along SiC grain boundaries. the thickness was about 5nm. The interface was composed of t-MoSi_2 and β-SiC, two-phase overlapped each other. Neither reaction layer nor amorphous matter was observed.
参考文献
| [1] | |
| [2] | LimCB,YandT,IsekT．JMaterSci,1989 |
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