采用射频磁控溅射法在(001)硅片上制备了ZnO薄膜,利用X射线衍射对薄膜的制备工艺进行了研究,结果表明,基板温度、溅射功率、氩氧比、总气压在一个较大的范围内变化时都可实现薄膜的c轴择优取向生长.随后对薄膜进行了空气退火并利用摇摆曲线表征薄膜的结晶质量,摇摆曲线的半高宽随退火温度的提高而减小,700℃退火后FWHM为2.5°.
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