以SnCl4·5H2O、SbCl3为原料,采用共沉淀法成功制备出在微纳米级Co表面包裹ATO(掺锑二氧化锡)的复合粉体,然后将制备的复合粉体与氟碳树脂复合并在磁场作用下进行自组装形成微阵列结构,移除磁场后,微阵列结构保持不变.利用XRD、SEM、紫外-可见光分光光度计(UVPC)及振动样品磁强计(VSM)等测试方法对Co/ATO复合粉体以及微阵列结构进行了表征与分析.讨论了不同ATO掺杂量对整个体系光学性能的影响,且当n(Co)/n(ATO)=1/2时,微阵列薄膜在300～2500 nm波段的光学反射率低于0.5％.
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