利用有机材料制作高密度存储器是当前纳米电子学研究的一个热点.有机LB膜的有序分子排列和能精确控制厚度的膜层被认为是高密度存储器理想的基体.具有原子分辨率及纳米量级局域作用微区的扫描隧道显微镜(STM)的出现则提供了制作超高密度存储器一种有力的高技术手段.本文介绍利用STM在有机LB膜上制作超高密度存储器.以硬脂酸制备多层LB膜,其形貌由STM成像.施加于STM针尖上的脉冲偏压,在LB膜表面的局域区域产生足够的强电场,使该微区转换为低阻导电状态,以高、低阻态分别表示两种逻辑状态,就完成了一次"写入"操作.LB膜材料的高、低阻态由STM的伏安特性(I-V)和扫描隧道谱(dI/dV-V)加以表征.用幅值较小的脉冲实现"读出"操作.该材料LB膜上存储的信息能保持很长时间,显示了潜在的应用前景.
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