采用激活能测试装置测量VHF-PECVD高速沉积的本征微晶硅薄膜,并对不同晶化率的样品和不同沉积功率、不同沉积压强条件下沉积制备的样品的激活能进行了分析研究.结果表明:在非晶-微晶相变域附近,激活能随着晶化率的升高而降低;随着沉积功率的增大和沉积气压的增大,沉积速率提高,样品的激活能升高,通过提高沉积功率和沉积气压可以有效的抑制氧污染.
Intrinsic microcrystalline silicon thin films were deposited by VHF PECVD, the activation energy of thin films were measured by activation energy testing equipment. The activation energy of samples with different crystalline volume fractions prepared at different power and different pressure were studied. The results showed that the activation energy of samples deposited at amorphous/microcrystalline transition zone decreased as the crystalline volume fractions increasing. As the depositing power and pressure increasing, the depositing rates and activation energy were also increased. As a result, oxygen contamination could be suppressed by increasing depositing rates using relatively higher power and pressure.
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