相比于单层热沉,双层热沉显著改善芯片温度均匀性.本文建立了双层热沉的三维流固耦合模型,采用参数递进优化法,对硅基水冷双层热沉的几何结构(流道数N、下层流道高度Hc1、上层流道高度Hc2和肋条宽度Wr)及上下两层通道的流速比t进行了优化研究.结果表明,在泵功0.2 W和热流密度100 W·cm-2时,最佳的双层热沉结构和通道流速比分别为:Yopt =70,Hcl,opt =200 μm,Hc2,opt =650μm,Wr,opt =71.48 μm和topt=l.85,相比于同样操作条件和几何参数的单层热沉,热阻降低了11.3％,热沉的最大温差从单层热沉的4.6 K降低到0.5 K,显著改善了热沉的温度均匀性.
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