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随着微/纳米技术的发展,在微/纳尺度器件中金属材料的几何尺度或微观结构尺度从宏观尺度逐渐减小到微米、亚微米甚至纳米量级,其室温电阻率往往表现出明显的尺寸效应.本文总结了近年来关于不同尺度金属材料电阻率的研究进展,重点介绍了金属材料的微观结构、缺陷尺度以及几何尺度对金属材料电阻率的影响及相关的理论模型,探讨了材料内部微观结构尺度与几何尺度对材料导电性能的影响规律.最后,对微尺度金属材料电阻率及其服役可靠性的研究趋势进行了展望.

参考文献

[1] J.D.Plummer,M.D.Deal,E B.Griffin,Silicon VLSI technology:Fundamentals,Practice and Modeling(Prentice Hall,2000)
[2] P.Moon,V.Chikarmane,K.Fischer,R.Grover,T.A.Ibrahim,D.Ingerly,K.J.Lee,C.Litteken,T.Mule,S.Williams,Process and electrical results for the on-die Interconnect stack for Intel's 45nm process generation,Intel Technology J.,12,529(2008)
[3] D.R.Frear,Materials issues in area-array microelectronic packaging,JOM-J.Miner.Met.& Mater.Soc.,51(2),22(1999)
[4] A.I.Kingon,J.P.Maria,S.K.Streiffer,Alternative dielectrics to silicon dioxide for memory and logic devices,Nature,406(6799),1032(2000)
[5] L.L.Melo,A.R.Vaz,M.C.Salvadori,M.Cattani,Grain sizes and surface roughness in platinum and gold thin films,J.Metastab.Nanocryst.,20-21,623(2004)
[6] G.P.Zhang,Z.G.Wang,Progress in fatigue of small dimensional materials,Acta Metall.Sinica,41(1),1(2005)
[7] G.P.Zhang,C.A.Volkert,R.Schwaiger,R.Monig,O.Kraft,Fatigue and thermal fatigue damage analysis of thin metal films,Microelectron.Reliab.,47(12),2007(2007)
[8] M.Wang,B.Zhang,G.E Zhang,C.S.Liu,Evaluation of thermal fatigue damage of 200-urn-thick Au interconnect lines,Scripta Mater,60(9),803(2009)
[9] B.Zhang,Q.Y.Yu,J.Tan,G.P.Zhang,Electric current-induced failure of 200-nm-thick gold interconnects,J Mater Sci Technol,24 (6),895(2008)
[10] G.P.Zhang,X.F.Zhu,Y.E Li,Evaluation of reliability of metal ilms/multilayers,El Packag Tech Conf,890(2008)
[11] M.Wang,B.Zhang,C.S.Liu,G.E Zhang,Study on thermal fatigue failure of thin gold film with alternating current loading,Acta Metall.Sinica,47(5),601 (2011)
[12] G.P.Zhang,C.A.Volkert,R.Schwaiger,P.Wellner,E.Arzt,O.Kraft,Length-scale-controlled fatigue mechanisms in thin copper films,Acta Mater.,54(11),3127(2006)
[13] M.Wang,B.Zhang,G.E Zhang,C.S.Liu,Scaling of reliability of gold interconnect lines subjected to alternating current,Appl.Phys.Lett.,99(1),011910(2011)
[14] N.Agrait,A.L.Yeyati,J.M.van Ruitenbeek,Quantum properties of atomic-sized conductors,Physics Reports-Review Section of Physics Letters,377(2-3),81 (2003)
[15] D.Josell,S.H.Brongersma,Z.Tokei,Size-dependent resistivity in nanoscale interconnects,Ann.Rev.Mater.Res.,39,231(2009)
[16] S.O.Kasap,Principles of electronic materials and devices,3rd ed (McGraw-Hill,2006)
[17] J.R.Sambles,The resistivity of thin metal films—Some critical remarks,Thin Solid Films,106(4),321(1983)
[18] L.M.Clarebrough,M.E.Hargreaves,M.H.Loretto,Electrical resistivity of dislocations in face-centred cubic metals,Philos.Mag.,7 (73),115(1962)
[19] D.A.Greenwood,Note on theory of thermal conduction in metals,Proc.Phys.Soc.London,80(513),226(1962)
[20] Y.Namba,Resisitivity and temperature coefficient of thin metal films with rough surface,Japanese J.App.Phys.,9(11),1326(1970)
[21] K.Nallamshetty,M.A.Angadi,Transport-properties of Cu/Cr multilayer films,Physica Status Solidi A-App.Res.,132(2),397(1992)
[22] Q.T.Jiang,M.H.Tsai,R.H.Havemann,Line width dependence of copper resistivity,Proceedings of the IEEE 2001 International,227(2001)
[23] J.Alonso,M.L.Fdez-Gubieda,G.Sarmiento,J.M.Barandiaran,A.Svalov,I.Orue,J.Chaboy,L.E Barquin,C.Meneghini,T.Neisius,N.Kawamura,Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate,App.Phy.Lett.,95(8),082103(2009)
[24] R.L.Graham,G.B.Alers,T.Mountsier,N.Shamma,S.Dhuey,S.Cabrini,R.H.Geiss,D.T.Read,S.Peddeti,Resistivity dominated by surface scattering in sub-50 um Cu wires,App.Phys.Lett.,96(4),042116(2010)
[25] M.C.Salvadori,A.R.Vaz,R.J.C.Farias,M.Cattani,Electrical resistivity of nanostructured platinum and gold thin films,Surf.Rev.Lett.,11(2),223(2004)
[26] M.Wang,B.Zhang,G.P.Zhang,Q.Y.Yu,C.S.Liu,Effects of interface and grain boundary on the electrical resistivity of Cu/Ta multilayers,J.Mater.Sci.Tech.,25(5),699(2009)
[27] H.Gleiter,Nanocrystalline Materials,Prog.Mater.Sci.,33(4),223 (1989)
[28] E.Botcharova,J.Freudenberger,L.Schultz,Mechanical and electrical properties of mechanically alloyed nanocrystalline Cu-Nb alloys,Acta Mater.,54(12),3333(2006)
[29] A.Habibi,M.Ketabchi,Enhanced properties of nano-grained pure copper by equal channel angular rolling and post-annealing,Mater.Design,34,483(2012)
[30] S.A.Hosseini,H.D.Manesh,High-strength,high-conductivity ultra-fine grains commercial pure copper produced by ARB process,Mater.& Design,30(8),2911 (2009)
[31] I.Nakamichi,Electrical resistivity and grain boundaries in metals,Intergranular and Interphase Boundaries in Materials,Pt1,207,47(1996)
[32] L.H.Qian,Q.H.Lu,W.J.Kong,K.Lu,Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu,Scripta Mater.,50(11),1407(2004)
[33] X.H.Chen,L.Lu,K.Lu,Electrical resistivity of ultrafine-grained copper with nanoscale growth twins,J.App.Phys.,102(8),083708(2007)
[34] J.J.Thomson,Electric conductivity of thin metallic films,Proc.of the Cambridge Philosophical Society,11,120(1901)
[35] K.Fuchs,The conductivity of thin metallic films according to the electron theory of metals,Proc.of the Cambridge Philosophical Society,34,100(1938)
[36] E.H.Sondheimer,The mean free path of electrons in metals,Adv.in Phys.,1(1),1(1952)
[37] A.E Mayadas,M.Shatzkes,Electrical-resistivity model for polycrystalline films-case of arbitrary reflection at external surfaces,Phys.Rev.B,1(4),1382(1970)
[38] K.M.Mannan,K.R.Karim,Grain boundary contribution to the electrical conductivity of polycrystalline Cu films,J.of Phys.F:Met.Phys.,5(9),1687(1975)
[39] J.M.Camacho,A.I.Oliva,Surface and grain boundary contributions in the electrical resistivity of metallic nanofilms,Thin Solid Films,515(4),1881 (2006)
[40] X.Zhang,X.H.Song,X.G.Zhang,D.L.Zhang,Grain boundary resistivities of polycrystalline Au films,Europhys.Lett,96(1),17010(2011)
[41] O.Anderoglu,A.Misra,E Ronning,H.Wang,X.Zhang,Significant enhancement of the strength-to-resistivity ratio by nanotwins in epitaxial Cu films,J.of App.Phys.,106(2),024313(2009)
[42] C.Durkan,M.E.Welland,Size effects in the electrical resistivity of polycrystalline nanowires,Phys.Rev.B,61(20),14215(2000)
[43] Q.J.Huang,C.M.Lilley,M.Bode,Surface scattering effect on the electrical resistivity of single crystalline silver nanowires self-assembled on vicinal Si (001),App.Phys.Lett.,95(10),103112(2009)
[44] Y.Kitaoka,T.Tono,S.Yoshimoto,T.Hirahara,S.Hasegawa,T.Ohba,Direct detection of grain boundary scattering in damascene Cu wires by nanoscale four-point probe resistance measurements,App.Phys.Lett.,95(5),052110(2009)
[45] S.M.Rossnagel,T.S.Kuan,Alteration of Cu conductivity in the size effect regime,J.Vac.Sci.& Techno.B,22(1),240(2004)
[46] J.W.Lim,K.Mimura,M.Isshiki,Thickness dependence of resistivity for Cu films deposited by ion beam deposition,App.Surf.Sci.,217(1-4),95(2003)
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