原子层淀积(ALD)技术作为一种先进的薄膜制备方法近年来越来越得到重视,它能精确地控制薄膜的厚度和组分,实现原子层级的生长,生长的薄膜具有很好的均匀性和保形性,因而在微电子和光电子等领域有广泛的应用前景.本文综述了ALD技术的基本原理,及其在金属氧化物薄膜制备上的研究进展.
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