以短切炭纤维、石墨粉、硅粉、树脂为原料,采用新开发的温压-熔融渗硅(WC-RMI)法制备C/C-SiC摩擦材料,对不同制动速度下材料的摩擦磨损性能进行研究,并对温压-熔融渗硅法的制备工艺过程进行理论分析.结果表明:C/C-SiC材料的密度可达1.78 g/cm3,残留单质Si的含量为0.3%,摩擦因数为0.36～0.43,体积磨损量低至0.6×10-2 cm3/MJ,且随着制动速度的增大,其磨损量迅速下降并趋于平稳;C/C-SiC材料在摩擦过程中能够形成光亮、平整、连续的摩擦膜,有效降低C/C-SiC材料的磨损量.
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