研究了Ti3SiC2掺杂对MgB2的晶格参数(a)、微观结构、超导转变温度(Tc)和临界电流密度(Jc)的影响.随着Ti3SiC2掺杂量的增加,晶格参数a逐渐变小,表明了C进入晶格代替B位的发生.随着掺杂量的增加,超导转变温度Tc从37.15K降低到36.55K.利用Bean模型通过M-H磁滞回线计算了样品的Jc值.结果表明,在低场区域,未掺杂样品的Jc值高于Ti3SiC2掺杂样品的Jc值.然而随着磁场的进一步增大,适量掺杂的样品Jc值得到提高.
The effects of Ti3SiC2 doping on lattice parameter (a),microstructure,critical temperature (Tc) and critical current density (Jc) of MgB2 superconductors were studied.Carbon substitution for boron could be confirmed by the shrinkage of the lattice parameter a with increasing of Ti3SiC2 doping level.A reduction of Tc from 37.15 K to 36.55 K with increasing of Ti3SiC2 doping was observed.The Jc values were determined by M-H hysteresis loops.Results show that in low magnetic field region,the Jc value for the undoped sample is higher than those for the doped samples.However,with the increase of the magnetic field,the Jc for the properly doped samples will be enhanced.
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