采用射频磁控反应溅射法,成功地在n-Si衬底上制备了高k栅介质Y2O3薄膜.对薄膜在不同温度退火后的结构、成分和电学性能进行了分析研究.结果表明,沉积态薄膜为非晶态,退火后薄膜开始晶化;沉积态薄膜中Y和O元素的原子浓度比基本符合化学计量比;薄膜具有较低的漏电流,退火后薄膜的漏电流降低.高频C-V曲线表明,退火后由于界面层的生长导致积聚电容减小.
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