随着集成电路的飞速发展,半导体器件特征尺寸按摩尔定律不断缩小.SiO2栅介质将无法满足Metal-oxide-semniconductor field-effect transistor(MOSFET)器件高集成度的需求.因此,应用于新一代MOSFET的高介电常数(k)栅介质材料成为微电子材料研究热点.介绍了不断变薄的SiO2栅介质层带来的问题、对MOSFET栅介质材料的要求、制备高k薄膜的主要方法,总结了高k材料的研究现状及有待解决的问题.
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