采用化学共沉淀法制备ITO粉体前驱物,在600℃煅烧粉体前驱物4h,得到粒径为20～30 nm的ITO粉体.添加1％的聚乙烯醇(PVA)造粒,模压成型制备ITO靶材素坯,设置不同的升温速率,在1550℃氧气氛下烧结素坯,得到ITO靶材.研究了烧结过程升温速率对ITO靶材密度和微观组织的影响.结果表明,在低温阶段(0～500℃)升温速率为3℃/min,高温阶段(500～1550℃)升温速率为8℃/min时,ITO靶材相对密度为99.58％,孔洞极少,近乎完全致密,且靶材宏观上无裂纹.
参考文献
| [1] | 张树高,吴义成,方勋华.ITO靶材热等静压致密化工艺研究[J].粉末冶金材料科学与工程,1999(02):132-136. |
| [2] | Kim MC;Sohn SH;Park DK;Jung SK;Kim EL;Lee YS;Hur Y;Park LS;Choi KH .Characteristics of ITO thin films for organic light emitting diode by using a low-frequency magnetron sputtering method[J].Molecular crystals and liquid crystals,2007(0):251-257. |
| [3] | Kima Y S;Parka J H;Choia D H et al.[J].Applied Surface Science,2007,254(05):1524. |
| [4] | Chebotareva AB;Untila GG;Kost TN;Jorgensen S;Ulyashin AG .ITO deposited by pyrosol for photovoltaic applications[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(24):8505-8510. |
| [5] | Nicolas Nadaud;Doh-Yeon Kim;Philippe Boch .Tiania as a sintering additive in indium oxide ceramics[J].Journal of the American Ceramic Society,1997(5):1208-1212. |
| [6] | Suzuki M;Muraoka M;Sawada Y et al.[J].Materials Science and Engineering B,1998,54(1-2):46. |
| [7] | Muraoka M.;Sawada Y.;Matsushita J.;Suzuki M. .Sintering of tin-doped indium oxide (Indium-Tin-Oxide, ITO) with Bi2O3 additive[J].Journal of Materials Science,1998(23):5621-5624. |
| [8] | 王玥 |
| [9] | 李亚静,刘家祥.降温速率对ITO靶材相组成的影响[J].稀有金属,2007(06):794-797. |
| [10] | Wit J H W de .[J].Journal of Solid State Chemistry,1975,13(03):192. |
| [11] | 黄培云.The Principle of Powder Metallurgy (粉末冶金原理)[M].北京:冶金工业出版社,2008:195. |
| [12] | Medvedovski E;Alvarez N;Yankov O et al.[J].Ceramics International,2008,34(07):1173. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%