本文采用沉淀法以SnCl2·H2O代替SbCl3制备了ZnO压敏变阻器.分析了SnO2含量对变阻器电学性能的影响.随着SnO2含量的增加,漏电流和压敏电压明显增大；而非线性系数在SnO2掺杂量达到3.0 mol％时达到极大值.通过适当的掺杂,得到了漏电流为0.08 μA,非线性系数为80.3,压敏电压为1006.7 V1mA/mm性能良好的ZnO变阻器.
参考文献
| [1] | Lihong Cheng;Guorong Li;Liaoying Zheng;Jiangtao Zeng;Yan Gu;Fuping Zhang .Analysis of High-Voltage ZnO Varistor Prepared from a Novel Chemically Aided Method[J].Journal of the American Ceramic Society,2010(9):2522-2525. |
| [2] | Shengtao Li;Tuo Zhang;Qifeng Huang;Weiwei Li;Fengyan Ni;Jianying Li .Improvement of Surface Flashover Performance in Vacuum of A-B-A Insulator by Adopting ZnO Varistor Ceramics as Layer A[J].IEEE Transactions on Plasma Science,2010(7):1656-1661. |
| [3] | Dong Xu;Xiaonong Cheng;Guoping Zhao .Microstructure and electrical properties of Sc_2O_3-doped ZnO-Bi_2O_3-based varistor ceramics[J].CERAMICS INTERNATIONAL,2011(3):701-706. |
| [4] | 巨锦华,王华,许积文,任明放,杨玲,袁昌来.TiO2掺杂ZnO-Bi2O3-Co2O3-MnCO3系低压压敏陶瓷的微结构和电性能研究[J].人工晶体学报,2011(02):505-509. |
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