碳化硅晶体具有很高的导热系数，能够在高温下操作，作为有希望用于微电子机械系统的材料，引起了人们的广泛关注。本文使用3ω方法测量了各向异性材料碳化硅晶体三个不同方向的导热系数。在碳化硅晶体样品的表面布置三个位置不同，一定尺度和形状的微型Au金属探测器。每个微型Au金属探测器的温度波动情况包含样品不同方向的热信号。根据谐波法测量原理和各向异性材料碳化硅晶体的导热特性，可得到碳化硅晶体样品X，Y和Z方向的导热系数。使用所设计的微型金属探测器结构，首次可同时获得各向异性材料三个方向的导热系数。
Due to the high thermal conductivity, ability to operate at high temperature, there has been a tremendous amount of interest in silicon carbide, which is considered as an attractive candidate material for MEMS applications. Thermal conductivities in three different directions of anisotropic silicon carbide （SIC） crystal are determinate using a 3ω method. Three Au micro-metal probers with a given size and shape are deposited on the surface of SiC crystal along different directions. The temperature fluctuation in every micro-metal prober imply thermal signal in specimen with different direction. According to measuring principle of 3w method and thermal characteristic in the anisotropic SiC crystal, thermal conductivities in x, y and z direction of SiC crystal can be acquired. The results indicate that thermal conductivities in three different directions of anisotropic materials can be characterized using the micro-metal prober construction we designed.
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