选取单晶硅作为隔热衬底,Bi和Sb材料作为靶材,采用磁控溅射技术溅射制备多层复合纳米薄膜.研究了当固定调制周期为40nm,Bi和Sb的调制比分别为1∶1、3∶2、4:1和1∶4时,Bi/Sb超晶格复合薄膜的Seebeck系数、电导率和功率因子在160～250K温度范围内随温度的变化.发现当调制比为1∶4时,Bi/Sb薄膜的功率因子明显高于其它3种情况.
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