ZrO<SUB>2</SUB>掺杂对SnO<SUB>2</SUB>薄膜电性及气敏性的影响

无机材料学报, 1997, 12(1): 59-64.

ZrO₂掺杂对SnO₂薄膜电性及气敏性的影响

方国家 , 刘祖黎 , 张杰 , 姚凯伦

华中理工大学物理系

武汉430074

1. 1华中理工大学材料科学系市武汉 430074

2. 2中科院国际材料物理中心

沈阳110015

北京100080

Huazhong Univ. of Sci.Tech. Wuhan 430074 China

1. 1Department ofMaterials Science

Academic Sinica Shenyang 110015 China

关键词： SnO₂薄膜 , Sol-Gel technique , ZrO₂ dopant concentration , electrical and gas sensing properties

Effect of ZrO₂ Dopant on the Electrical and Gas Sensing Properties of SnO₂ Thin Films Prepared by the Sol-Gel Technique

FANG Guojia , LIU Zuli , ZHANG Jie , YAO Kailun

Keywords： ZrO₂ doped SnO₂ thin films , Slo－Gel工艺 , ZrO₂掺杂份量 , 电学及气敏性能

本研究不用金属酸盐而以无机盐SnCl₂·2H₂O为主体原料;以Zr（OC₃H₇）₄为掺杂剂;无水乙醇为溶剂，采用溶胶-疑胶（Sol－Gel）工艺制备了不同ZrO₂掺杂份量的SnO₂薄膜.发现ZrO₂掺杂的SnO₂薄膜在常温下对H₂S气体具有较好的气敏性能.同时本文研究了ZrO₂掺杂份量对SnO₂薄膜导电率及气敏性能的影响.

SnO₂(ZrO₂) thin films with different dopant concentrations were deposited on soda-glass sheets by the Sol-Gel technique, using non-alkoxide SnCl₂.2H₂O as main precursor, Zr(OC₃H₇)₄ as dopant, ethanol as solvent. The effect of ZrO₂ dopant concentration on the efectrical and gas sensing was studicd. We found that the ZrO₂-SnO₂ thin films prepared by this method havc very good gas sensitivity, excellent selectivity, rapid rcspionse and recovery behaviour to H₂S at room temperature

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材料期刊网

ZrO2掺杂对SnO2薄膜电性及气敏性的影响

Effect of ZrO2 Dopant on the Electrical and Gas Sensing Properties of SnO2 Thin Films Prepared by the Sol-Gel Technique

参考文献

ZrO₂掺杂对SnO₂薄膜电性及气敏性的影响

Effect of ZrO₂ Dopant on the Electrical and Gas Sensing Properties of SnO₂ Thin Films Prepared by the Sol-Gel Technique