以等摩尔分数的Al元素替代(In2Te3)0.09 (SnTe)0.91中的In元素,利用放电等离子烧结技术、采用相同的工艺制备了(In2Te3)0.09(SnTe)0.91和(In1.9Al0.1Te3)0.09 (SnTe)0.91 2种化合物,并对两者的微观结构和热电性能进行对比.结果表明,掺杂A1元素后,材料的Seebeck系数降低很小,电导率为1×105～2.3×105 Ω-1·m-1,是掺杂前的2.4～3倍,晶格热导率kL值大幅度降低.在693K时,掺杂A1后的化合物ZT值达到最大值0.4,是同温度下掺杂前ZT值的2倍.
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