欢迎登录材料期刊网

材料期刊网

高级检索

场致发射显示是一种具有良好应用前景的新型显示技术,场致发射阴极材料是场致发射显示器的核心内容.综述了近年来场致发射材料的研发热点,对金属、硅、金刚石及类金刚石薄膜、GaAs和CaN等场致发射材料的研究做了简要的归纳,同时介绍了碳纳米管、表面传导型场致发射材料及采用定向凝固技术制备的Si-TaSi2共晶自生复合场致发射材料等新型场致发射材料的研究进展,并展望了场致发射材料的研究及应用前景.

参考文献

[1] 段新超,王小平,王丽军,王隆洋,张雷.平板显示用场发射冷阴极材料[J].材料导报,2008(01):8-12.
[2] 应根裕;胡文波;邱勇.平板显示技术[M].北京:人民邮电出版社,2002:426.
[3] 林志贤,郭太良.场致发射材料的特性[J].福州大学学报(自然科学版),2000(04):22-25.
[4] Laser-induced surface cleaning of molybdenum field emitter arrays for enhanced electron emission[J].Applied Physics Letters,2003(19):3299-3301.
[5] Lee JD.;Oh CW.;Park BG. .Electrical aging of molybdenum field emitters.[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2003(1):440-444.
[6] 富笑男,李新建.硅基场发射阴极材料研究进展[J].科学技术与工程,2005(03):165-173.
[7] Seung-Youl Kang;Jin Ho Lee;Yoon-Ho Song;Yuon Tae Kim;Kyoung Ik Cho;Hyung Joun Yoo .Emission characteristics of TiN-coated silicon field emitter arrays[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,1998(2):871-874.
[8] Deng JX;Chen GH .Surface properties of cubic boron nitride thin films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(22):7766-7770.
[9] Sokolov N S;Grekhov I V;Ikeda S et al.Low-leakage MIS structures with 1.5~6nm CaF2 insulating layer on Si (111)[J].Microelectronic Engineering,2007,84(9-10):2247.
[10] Matsukawa T.;Tokunaga K.;Itoh J.;Kanemaru S. .Effects of conduction type on field-electron emission from single Si emitter tips with extraction gate[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2000(2):1111-1114.
[11] 欧益宏,周明来,张正元.硅的深槽刻蚀技术研究[J].微电子学,2004(01):45-47.
[12] 林志贤,郭太良.金刚石薄膜场致发射材料的特性与应用[J].龙岩学院学报,2005(06):39-41.
[13] D. Saito;H. Isshiki;T. Kimura .Positive-bias enhanced growth of high quality diamond films by microwave plasma chemical vapor deposition[J].Diamond and Related Materials,2009(1):56-60.
[14] Shumin Yang;Zhoutong He;Qintao Li .Diamond films with preferred <110> texture by hot filament CVD at low pressure[J].Diamond and Related Materials,2008(12):2075-2079.
[15] Xu N S;Tzeng Y;Latham R V .A diagnostic study of the field emission characteristics of individual micro-emitters in CVD diamond films[J].Journal of Physics D:Applied Physics,1994,27:1988.
[16] K. Polychronopoulou;C. Rebholz;M.A. Baker .Nanostructure, mechanical and tribological properties of reactive magnetron sputtered TiC_x coatings[J].Diamond and Related Materials,2008(12):2054-2061.
[17] 冯涛,茅东升,李炜,柳襄怀,王曦,张福民,李琼,徐静芳,诸玉坤.类金刚石薄膜作为阴极阵列的场发射显示器研制[J].功能材料与器件学报,2002(03):293-296.
[18] Chiaramonte T;Romero MJ;Fabreguette F;Cardoso LP;Sacilotti M .Cathodoluminescence and structural studies of nitrided 3D gallium structures grown by MOCVD[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2009(3):176-180.
[19] lijima S .Helical microtubules of graphitic carbon[J].Nature,1991,354:56.
[20] Xu N S;Ejaz H S .Novel cold cathode materials and applications[J].Materials Science and Engineering R:Reports,2005,48:47.
[21] Hu J;Chen C L;Zhou X X et al.Removal of chromium from aqueous solution by using oxidized multiwalled carbon nanotubes[J].Journal of Hazardous Materials,2009,162(2-3):1542.
[22] 张秀霞,朱长纯.新型圆柱结构的场发射碳纳米管发光管[J].西安交通大学学报,2006(04):424-426,436.
[23] K. Bartsch;B. Arnold;R. Kaltofen .Effects of catalyst pre-treatment on the growth of single-walled carbon nanotubes by microwave CVD[J].Carbon: An International Journal Sponsored by the American Carbon Society,2007(3):543-552.
[24] Queipo, P;Nasibulin, AG;Shandakov, SD;Jiang, H;Gonzalez, D;Kauppinen, EI .CVD synthesis and radial deformations of large diameter single-walled CNTs[J].Current applied physics: the official journal of the Korean Physical Society,2009(2):301-305.
[25] Sun L F;Xie S S;Liu W et al.Materials creating the narrowest carbon nanotubes[J].Nature,2000,403(6768):384.
[26] Wang N;Tang Z K;Li G D et al.Materials science:Single-walled 4A carbon nanotube arrays[J].Nature,2000,408(6808):50.
[27] 徐强,吴振森,李德昌.碳纳米管的场致发射研究进展[J].西安电子科技大学学报(自然科学版),2002(02):249-252.
[28] 林志贤,郭太良.场致发射显示器研究与进展[J].光电子技术,2006(01):1-5,14.
[29] Ditchek B M;Levinson M .Si-TaSi2 in situ junction eutectic composite diodes[J].Applied Physics Letters,1986,49(24):1656.
[30] Kirkpatrick D A .Printer and/or copier using a field emission array[P].US,5903804,1999-05-11.
[31] Zhang J;Cui C J;Han M et al.Microstructure and property of Czochralski-grown Si-TaSi2 eutectic in situ composite for field emission[J].Journal of Crystal Growth,2005,276:92.
[32] Ditchek B M;Hefter J;Middleton T R .Microstructure of czochralski-grown Si-TaSi2 eutectic composites[J].Journal of Crystal Growth,1990,102:401.
[33] Chunjuan Cui;Jun Zhang;Bo Li;Min Han;Lin Liu;Hengzhi Fu .Microstructure characteristics and interface morphology evolvement of Si-TaSi_2 eutectic in situ composite for field emission[J].Journal of Crystal Growth,2007(2):248-253.
[34] 崔春娟,张军,韩民,陈军,许宁生,刘林,傅恒志.Si-TaSi2共晶自生复合场发射材料的组织与性能[J].科学通报,2006(24):2915-2919.
[35] 於黄中,彭俊彪.场致发射阴极材料的研究与进展[J].材料导报,2005(01):86-89.
[36] 刘爱青,元光,顾长志.钛酸钡薄膜的制备及其场发射特性研究[J].真空电子技术,2006(01):41-43.
[37] 倪赛力,常永勤,龙毅,叶荣昌.氧化锌纳米棒场发射性能研究[J].物理学报,2006(10):5409-5412.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%