{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"在采用传统固相法预合成<span style=\"color:red\">Mg2SiO4</span>和MgTiO3粉体的基础上,在H<span style=\"color:red\">2</span>气氛下常压烧结制备了<span style=\"color:red\">Mg2SiO4-MgTiO3-SiC</span>复相材料.研究了<span style=\"color:red\">Mg2SiO4</span>和MgTiO3的最佳原料配比及MgTiO3的添加量、烧结温度、保温时间对复相材料烧结性能和相组成的影响.结果表明:<span style=\"color:red\">Mg2SiO4</span>粉的最佳<span style=\"color:red\">Mg</span>/Si物质的量比为2.02,MgTiO3粉的最佳<span style=\"color:red\">Mg</span>/Ti物质的量比为1,<span style=\"color:red\">Mg2SiO4-MgTiO3-SiC</span>复相材料的相组成为<span style=\"color:red\">Mg2SiO4</span>、MgTiO3和6H-<span style=\"color:red\">SiC</span>; MgTiO3的加入可促进材料烧结,最佳保温时间为1h.","authors":[{"authorName":"周萍","id":"79c238ab-87a7-44aa-b552-8493de649a9f","originalAuthorName":"周萍"},{"authorName":"李晓云","id":"1d97e77c-ed37-4cb6-b471-d3031d94be60","originalAuthorName":"李晓云"},{"authorName":"丘泰","id":"fa551a6b-1578-4744-bb39-cc4b605a3af2","originalAuthorName":"丘泰"},{"authorName":"杨建","id":"3e36f617-8006-496c-8815-f6e487726048","originalAuthorName":"杨建"}],"doi":"","fpage":"371","id":"5e6d0fd4-0bd5-4320-9772-81d3b56c8c9c","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"4fd2b01c-7bcb-45be-9686-418647b67378","keyword":"MgTiO3","originalKeyword":"MgTiO3"},{"id":"14830bed-3889-4380-8994-3a531ce1c3e5","keyword":"<span style=\"color:red\">Mg2SiO4-SiC</span>","originalKeyword":"Mg2SiO4-SiC"},{"id":"be2872f2-e692-4e7b-b4d0-e900c281d5d1","keyword":"常压烧结","originalKeyword":"常压烧结"}],"language":"zh","publisherId":"rgjtxb98201202022","title":"MgTiO3对<span style=\"color:red\">Mg2SiO4-SiC</span>复相材料烧结性能的影响","volume":"41","year":"2012"},{"abstractinfo":"以<span style=\"color:red\">Mg2SiO4</span>和<span style=\"color:red\">SiC</span>为原料,Al<span style=\"color:red\">2O3-BaO-SiO2</span>作为复合烧结助剂,H<span style=\"color:red\">2</span>气氛下在1450℃下保温1h常压烧结制备出了<span style=\"color:red\">Mg2SiO4-SiC</span>复相微波衰减材料；采用X射线衍射、扫描电子显微镜对复相材料的相组成、显微结构进行表征.研究了<span style=\"color:red\">SiC</span>添加量对复相材料X波段(8～ 12 GHz)微波衰减性能的影响.结果表明:通过加入一定量的Al<span style=\"color:red\">2O3BaO-SiO2</span>复合烧结助剂能有效促进烧结致密化,复相材料的显气孔率均在0.5％以下；<span style=\"color:red\">SiC</span>含量从0增加到10％,复相材料谐振频率由11.8 GHz递减到10.0 GHz,衰减峰值的绝对值由3.62 dB递减到1.18 dB,有效衰减带宽由0.48 GHz递增到1.03 GHz,随着<span style=\"color:red\">SiC</span>含量的增加,谐振频率向低频移动,衰减峰绝对值降低,有效衰减带宽增大.","authors":[{"authorName":"杜磊","id":"f853f4e7-e678-4ecd-a200-99a15e10f6d5","originalAuthorName":"杜磊"},{"authorName":"李晓云","id":"ea33cca2-bea6-4685-bc72-4bda09980076","originalAuthorName":"李晓云"},{"authorName":"丘泰","id":"542174a8-1150-4e0d-af9c-3cf530e56d0a","originalAuthorName":"丘泰"}],"doi":"","fpage":"973","id":"eaf5178a-b758-469b-b5d3-04bfa817d243","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"41847d6c-7f94-4225-aa1b-4360d0576a86","keyword":"常压烧结","originalKeyword":"常压烧结"},{"id":"4bb0214e-a8a6-42ea-9038-b0f65ef0adcb","keyword":"复相材料","originalKeyword":"复相材料"},{"id":"40847350-821f-40fb-88d7-2c9f18918213","keyword":"微波衰减性能","originalKeyword":"微波衰减性能"}],"language":"zh","publisherId":"rgjtxb98201104031","title":"常压烧结<span style=\"color:red\">Mg2SiO4-SiC</span>复相材料的微波衰减性能","volume":"40","year":"2011"},{"abstractinfo":"采用传统的电子陶瓷制备工艺制备了BSTO/<span style=\"color:red\">Mg2SiO4</span>/MgO复合材料,并对样品的结构及其介电性能进行了表征与分析,讨论了<span style=\"color:red\">Mg2SiO4</span>/MgO掺杂对BSTO/<span style=\"color:red\">Mg2SiO4</span>/MgO复合材料结构和性能的影响.结果表明,与前其他掺杂改性的BSTO复合材料相比,BSTO/<span style=\"color:red\">Mg2SiO4</span>/MgO复合材料不仅可以在较低的温度烧结致密,而且在介电常数降低的同时,仍能保持较高的可调性,如BSTO/39wt%<span style=\"color:red\">Mg2SiO4</span>/17wt%MgO的介电常数εr为～80.21,在<span style=\"color:red\">2</span>kV/mm的直流偏置电场下,其可调性达到～12%,介电损耗为～0.003.","authors":[{"authorName":"陈莹","id":"11f027c6-c72c-4d84-8a8b-10988fac0214","originalAuthorName":"陈莹"},{"authorName":"董显林","id":"5562674b-cce6-4e87-bcb5-d0d4eed73365","originalAuthorName":"董显林"},{"authorName":"高敏","id":"42a1a6b3-25b0-4a40-ae9e-a9e944f1be3f","originalAuthorName":"高敏"},{"authorName":"梁瑞虹","id":"3a22e56e-a85e-4450-b640-1f51c575f908","originalAuthorName":"梁瑞虹"},{"authorName":"曹菲","id":"97e54b23-4e17-438c-9b66-3154b75113f5","originalAuthorName":"曹菲"}],"doi":"10.3321/j.issn:1000-324X.2005.04.040","fpage":"1013","id":"1758fc2f-e0db-42c8-b3cc-7756fe693208","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"14742d2e-65f0-4c6e-a814-9c973c62f7f0","keyword":"钛酸锶钡","originalKeyword":"钛酸锶钡"},{"id":"83a9f4ad-d5e4-4c04-9bca-071348de789b","keyword":"复合材料","originalKeyword":"复合材料"},{"id":"6f00a26a-e86b-452e-9ad7-3b9dbb34b1eb","keyword":"介电性能","originalKeyword":"介电性能"},{"id":"4d0b5ef7-fa1a-4f19-acbd-818be602ebe8","keyword":"可调性","originalKeyword":"可调性"}],"language":"zh","publisherId":"wjclxb200504040","title":"BSTO/<span style=\"color:red\">Mg2SiO4</span>/MgO复合材料的介电性能研究","volume":"20","year":"2005"},{"abstractinfo":"采用固相反应法制备了Co3O<span style=\"color:red\">4</span>掺杂<span style=\"color:red\">Mg2SiO4</span>微波介质陶瓷,研究Co<span style=\"color:red\">2</span>+离子掺杂对<span style=\"color:red\">Mg2SiO4</span>陶瓷烧结特性、相组成和介电性能的影响.结果表明:Co<span style=\"color:red\">2</span>+可以完全取代<span style=\"color:red\">Mg2</span>+固溶在<span style=\"color:red\">Mg2</span> <span style=\"color:red\">SiO4</span>晶体中形成(Cox <span style=\"color:red\">Mg</span>1-x)<span style=\"color:red\">2SiO4</span>固溶体,通过调整加入的Co3O<span style=\"color:red\">4</span>的摩尔量可以获得介电性能优良的微波陶瓷.当x=0.025时,在1250℃下保温3h,( Co0.025<span style=\"color:red\">Mg</span>0.975)<span style=\"color:red\">2</span> <span style=\"color:red\">SiO4</span>陶瓷具有良好的介电性能为:εr=7.7,Q=8850(1.8MHz),电容温度系数为50.4×10-6/℃.","authors":[{"authorName":"李鑫","id":"a104374b-b822-4791-ac91-5ec0c1c6348d","originalAuthorName":"李鑫"},{"authorName":"李晓雷","id":"a6d875c1-c4f5-4657-89ab-0255721227a6","originalAuthorName":"李晓雷"},{"authorName":"刘晓光","id":"40423189-445f-4d06-a687-6bf3ec8f76fe","originalAuthorName":"刘晓光"},{"authorName":"唐定中","id":"9ac97d78-5ae6-4239-8b9b-537eb37f0e1b","originalAuthorName":"唐定中"},{"authorName":"季惠明","id":"6f55c183-5f7b-4e07-a643-8ffd2b03a8f7","originalAuthorName":"季惠明"},{"authorName":"毕宝宝","id":"c510d3da-dbdd-4aef-8e00-8929719eb28a","originalAuthorName":"毕宝宝"},{"authorName":"齐长见","id":"b55bc95f-6a48-4756-a8b5-448b9862f7f0","originalAuthorName":"齐长见"}],"doi":"10.3969/j.issn.1001-4381.2010.z2.003","fpage":"7","id":"459a0a90-d02b-40bd-a7aa-8befe2609be3","issue":"z2","journal":{"abbrevTitle":"CLGC","coverImgSrc":"journal/img/cover/CLGC.jpg","id":"9","issnPpub":"1001-4381","publisherId":"CLGC","title":"材料工程"},"keywords":[{"id":"7d42669a-961a-41e6-bf8e-877584f7bfc4","keyword":"<span style=\"color:red\">Mg2SiO4</span>","originalKeyword":"Mg2SiO4"},{"id":"bdc49e73-2922-4965-9e2c-db83fe39d5b8","keyword":"羝介电常数","originalKeyword":"羝介电常数"},{"id":"5650f9ab-8427-4fdd-8e77-fd244f12468f","keyword":"微波介质陶瓷","originalKeyword":"微波介质陶瓷"},{"id":"04450b13-20b6-4c6e-8095-2320efe04e4b","keyword":"Co3O<span style=\"color:red\">4</span>","originalKeyword":"Co3O4"}],"language":"zh","publisherId":"clgc2010z2003","title":"CO3O<span style=\"color:red\">4</span>掺杂<span style=\"color:red\">Mg2SiO4</span>陶瓷介电性能的研究","volume":"","year":"2010"},{"abstractinfo":"对Si3N<span style=\"color:red\">4</span>-C和<span style=\"color:red\">SiO2-C-N2</span>系统中的主要化学反应以及<span style=\"color:red\">SiC</span>晶须在两种系统中合成的热力学条件进行了分析,进而采用碳黑为碳源、Si3N<span style=\"color:red\">4</span>与<span style=\"color:red\">SiO2</span>微粉为硅源、氧化硼为催化剂,分别在氩气与氮气气氛下,于1600℃合成<span style=\"color:red\">SiC</span>晶须.采用扫描电子显微镜,透射电子显微镜等分析手段分析了晶须的生成量和形貌结构特征.结果表明:通过<span style=\"color:red\">SiO2-C-N2</span>系统可以一步合成<span style=\"color:red\">SiC</span>晶须,其与Si3N<span style=\"color:red\">4</span>-C系统合成的均为β-<span style=\"color:red\">SiC</span>;但在晶须的生成量和质量上,Si3N<span style=\"color:red\">4</span>-C系统合成的<span style=\"color:red\">SiC</span>晶须较好.","authors":[{"authorName":"张颖","id":"377523d1-95f1-47ef-82ea-ff2392cc4f70","originalAuthorName":"张颖"},{"authorName":"张军战","id":"d4dd09f8-8090-46bf-9330-2d4b7c2556f9","originalAuthorName":"张军战"},{"authorName":"刘民生","id":"01fd4a52-13ab-4095-817c-55f7397e3f91","originalAuthorName":"刘民生"}],"doi":"","fpage":"1375","id":"da9914d0-9c70-4482-9d13-8a82b7d28a90","issue":"7","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报   "},"keywords":[{"id":"f7785615-239c-4f67-968c-9e774a0941e7","keyword":"<span style=\"color:red\">SiC</span>晶须","originalKeyword":"SiC晶须"},{"id":"50a0248e-472e-405f-a2bb-85af73a6485a","keyword":"热力学","originalKeyword":"热力学"},{"id":"f2e905fd-9361-4a39-9fe2-4eeaeb6fc75a","keyword":"合成系统","originalKeyword":"合成系统"},{"id":"06b7d8b7-ffb3-46bf-8876-3a3d3ceae2dd","keyword":"形貌结构特征","originalKeyword":"形貌结构特征"}],"language":"zh","publisherId":"gsytb201307028","title":"<span style=\"color:red\">SiC</span>晶须在Si3N<span style=\"color:red\">4</span>-C和<span style=\"color:red\">SiO2-C-N2</span>系统中的合成","volume":"32","year":"2013"},{"abstractinfo":"以碱式碳酸镁和<span style=\"color:red\">SiO2</span>为原料,采用固相反应法合成MgzSiO<span style=\"color:red\">4</span>.结果表明,当<span style=\"color:red\">Mg</span>/Si比为<span style=\"color:red\">2</span>∶1.2,在1200℃以上空气气氛中预烧3h,能合成出单相的<span style=\"color:red\">Mg2SiO4</span>.在1280～1340℃保温<span style=\"color:red\">2</span>h烧结成瓷后,其1MH<span style=\"color:red\">2</span>介电常数为7.05±0.05,损耗角正切变化范围在(<span style=\"color:red\">2</span>～5)×10-<span style=\"color:red\">4</span>之间,体积密度为(3.1±0.5)g/cm3.","authors":[{"authorName":"孙成礼","id":"1d1f8566-354a-40dd-a7c4-77f370155b2f","originalAuthorName":"孙成礼"},{"authorName":"张树人","id":"6d170b2b-ec30-428d-8fe7-b4cd521eeb84","originalAuthorName":"张树人"},{"authorName":"周晓华","id":"85e77343-f597-48fe-9244-3bc97fda3abb","originalAuthorName":"周晓华"},{"authorName":"李波","id":"56f123c5-ffb4-4d87-8fb9-bb121088ce32","originalAuthorName":"李波"}],"doi":"","fpage":"30","id":"abb61974-620c-4cd5-96d5-96ad3d646c8e","issue":"z3","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"bfa742d4-52fd-4b54-b7b6-9665a397038e","keyword":"<span style=\"color:red\">Mg2SiO4</span>","originalKeyword":"Mg2SiO4"},{"id":"2db4995a-7f66-4416-9410-6ff731dd55ce","keyword":"固相反应","originalKeyword":"固相反应"},{"id":"76fa0a58-d2b7-4f9b-ae05-dffcbccf2f11","keyword":"低介材料","originalKeyword":"低介材料"}],"language":"zh","publisherId":"cldb2008z3011","title":"<span style=\"color:red\">Mg2SiO4</span>固相合成及其性能研究","volume":"22","year":"2008"},{"abstractinfo":"<span style=\"color:red\">Mg2SiO4</span>粉体的形貌和粒度.最终获得的MgTiO3陶瓷1MHz下的介电常数为17.3,损耗角正切1.3 × 10-<span style=\"color:red\">4</span>,<span style=\"color:red\">Mg2SiO4</span>陶瓷1MHz下的介电常数为6.9,损耗角正切2.5×10-<span style=\"color:red\">4</span>.","authors":[{"authorName":"赵麒植","id":"df5ef9a0-0867-463d-bcbf-915ca7b3ebba","originalAuthorName":"赵麒植"},{"authorName":"张树人","id":"579556db-2508-4ca1-86cd-64f5d15a6f5b","originalAuthorName":"张树人"},{"authorName":"唐斌","id":"fcd02a18-ba51-4c93-a86d-2f396c1315d2","originalAuthorName":"唐斌"},{"authorName":"周晓华","id":"0d121a5b-9345-4e3f-b7d5-19c019cce15b","originalAuthorName":"周晓华"},{"authorName":"孙成礼","id":"7dcea927-d925-40f8-8cdd-3200cdc2a98f","originalAuthorName":"孙成礼"}],"doi":"","fpage":"561","id":"fdd4b596-17f6-4449-bf5c-4b2e3e61e4b6","issue":"4","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"37fed320-cbfb-4a1b-b8fd-7caa19afd64a","keyword":"钛酸镁","originalKeyword":"钛酸镁"},{"id":"e3b41aed-3aec-4704-bf34-4e9038f7b2ca","keyword":"镁橄榄石","originalKeyword":"镁橄榄石"},{"id":"2bff598c-857c-48b5-b05b-7f83323e434d","keyword":"固相合成","originalKeyword":"固相合成"},{"id":"652540cd-aae5-44cb-85ce-16aa7bad5396","keyword":"非化学计量比","originalKeyword":"非化学计量比"},{"id":"4da0d606-ff16-44f8-9066-2b4b04e57aed","keyword":"介电性能","originalKeyword":"介电性能"}],"language":"zh","publisherId":"clkxygc200904017","title":"非化学计量比制备纯MgTiO3和<span style=\"color:red\">Mg2SiO4</span>及其性能","volume":"27","year":"2009"},{"abstractinfo":"采用溶胶-凝胶旋涂法制备了纳米Co1-xMgxFe<span style=\"color:red\">2O4</span>/<span style=\"color:red\">SiO2</span>（x=0,0.2,0.4,0.6,0.8）复合薄膜。利用XRD、SEM、原子力显微镜、振动样品磁强计对薄膜的结构、形貌和磁性进行了分析,研究了<span style=\"color:red\">Mg2</span>＋含量对样品结构和磁性的影响。结果表明,样品中Co1-xMgxFe<span style=\"color:red\">2O4</span>具有尖晶石结构,晶粒尺寸在38～46nm之间。随着<span style=\"color:red\">Mg2</span>＋含量的增加,Co1-xMgxFe<span style=\"color:red\">2O4</span>的晶格常数减小,样品的饱和磁化强度减小,矫顽力先增大后减小。样品Co0.4<span style=\"color:red\">Mg0.6Fe2O4</span>/<span style=\"color:red\">SiO2</span>垂直和平行膜面的矫顽力分别为350.7kA.m-1和279.4kA.m-1,剩磁比分别为67.2%和53.9%,Co1-xMgxFe<span style=\"color:red\">2O4</span>/<span style=\"color:red\">SiO2</span>复合薄膜具有较明显的垂直磁各向异性。","authors":[{"authorName":"刘宇","id":"0051ab27-c120-4112-9b98-a83fe66079f1","originalAuthorName":"刘宇"},{"authorName":"李季","id":"8f05611a-4f83-4d90-ab74-c5b63687b719","originalAuthorName":"李季"},{"authorName":"张玉梅","id":"16ce08e5-77f1-4b9c-8ca9-842e925797d9","originalAuthorName":"张玉梅"},{"authorName":"华杰","id":"e07ab8c6-6959-4e8c-9139-63e56dcaa449","originalAuthorName":"华杰"},{"authorName":"刘梅","id":"046ddf5c-2ae5-4cb2-ae25-eb16421702bc","originalAuthorName":"刘梅"},{"authorName":"李海波","id":"e3ef35fb-b235-4c01-8988-d189340768c5","originalAuthorName":"李海波"}],"doi":"","fpage":"98","id":"e4a6ebfd-3913-457c-91fa-e5b47a50304d","issue":"2","journal":{"abbrevTitle":"FHCLXB","coverImgSrc":"journal/img/cover/FHCLXB.jpg","id":"26","issnPpub":"1000-3851","publisherId":"FHCLXB","title":"复合材料学报"},"keywords":[{"id":"8f793888-ae4a-41bc-9b1f-5dc0188191b6","keyword":"铁氧体薄膜","originalKeyword":"铁氧体薄膜"},{"id":"22701644-d58d-4dd7-9fd2-62bfc3d7990f","keyword":"纳米复合材料","originalKeyword":"纳米复合材料"},{"id":"aae69d01-fc6a-4fe8-b140-6d1a087cf9c9","keyword":"结构","originalKeyword":"结构"},{"id":"dc356d4b-d022-45ea-8bbb-d7a652991027","keyword":"磁性","originalKeyword":"磁性"},{"id":"361a211f-436f-4532-a710-2238aeaccf4d","keyword":"掺杂","originalKeyword":"掺杂"}],"language":"zh","publisherId":"fhclxb201202015","title":"掺杂<span style=\"color:red\">Mg</span>对纳米CoFe_<span style=\"color:red\">2O_4</span>/<span style=\"color:red\">SiO_2</span>复合薄膜结构和磁性的影响","volume":"29","year":"2012"},{"abstractinfo":"<FONT face=Verdana>采用固相反应法制备(<span style=\"color:red\">Mg</span> <SUB>1-x</SUB> Zn<SUB>x</SUB>)<SUB><span style=\"color:red\">2</span></SUB> <span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB> (0≤x≤1)微波介质陶瓷, 研究(<span style=\"color:red\">Mg</span> <SUB>1-x</SUB> Zn<SUB>x</SUB>)<SUB><span style=\"color:red\">2</span></SUB> <span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB> 陶瓷在0≤x≤1范围内的相演变、微结构与其微波介电性能间相互关系. XRD测试结果表明：橄榄石结构的<span style=\"color:red\">Mg</span><SUB><span style=\"color:red\">2</span></SUB><span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB>与硅矽矿结构的Zn<SUB><span style=\"color:red\">2</span></SUB><span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB>在晶体结构上存在很大差别, (<span style=\"color:red\">Mg</span>, Zn)<SUB><span style=\"color:red\">2</span></SUB> <span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB>在0≤x≤1范围内只能部分地实现有限固溶. 背散射电子扫描显微镜（BESEM）测试结果显示：随着x的增加, MgSiO<SUB>3</SUB>第二相得到抑制; 陶瓷出现液相烧结, 促进晶粒生长与玻璃相在晶界处沉积. 微波介电性能测试结果表明：由于Zn <SUP><span style=\"color:red\">2</span>+</SUP>离子极化能力大于<span style=\"color:red\">Mg</span> <SUP><span style=\"color:red\">2</span>+</SUP>离子, (<span style=\"color:red\">Mg</span> <SUB>1-x</SUB> Zn<SUB>x</SUB>)<SUB><span style=\"color:red\">2</span></SUB> <span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB> (0≤x≤1)陶瓷介电常数随x值增加而增大; 0≤<BR>x≤1范围内, <span style=\"color:red\">Mg</span><SUB><span style=\"color:red\">2</span></SUB><span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB>陶瓷微波性能由于第二相、气孔率增加与晶粒增大而降低, Zn<SUB><span style=\"color:red\">2</span></SUB><span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB>陶瓷由于微结构得到改善, 陶瓷微波性能得到优化. 当x=0.6时, 得到较好的(<span style=\"color:red\">Mg</span> <SUB>0.4</SUB> Zn <SUB>0.6</SUB>)<SUB><span style=\"color:red\">2</span></SUB> <span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB> 陶瓷微波性能为：ε<SUB>r</SUB>=6.6, Qf=95650GHz,τ<SUB>f</SUB>=-60×10<SUP>-6</SUP>/℃</FONT>","authors":[{"authorName":"宋开新","id":"b70e2e91-4a1d-4da1-8812-d7d301cef482","originalAuthorName":"宋开新"},{"authorName":"应智花","id":"c7f0ad55-580a-4c35-9301-0007aa4a4b82","originalAuthorName":"应智花"},{"authorName":"邵李焕","id":"684bccec-33ed-47e8-9984-d8d0587473f9","originalAuthorName":"邵李焕"},{"authorName":"郑梁","id":"0dae2021-a01f-43c5-b8bc-4642e3be2ed5","originalAuthorName":"郑梁"},{"authorName":"徐军明","id":"577dd845-01e0-4d7d-8cc2-c10f92eedba3","originalAuthorName":"徐军明"},{"authorName":"秦会斌","id":"cf41d6f3-cb63-4ff8-bce9-eb105a455439","originalAuthorName":"秦会斌"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2010.00255","fpage":"255","id":"2a0b2905-14c2-4ff0-8042-1db50edd8f62","issue":"3","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"50b72d2a-766e-4c85-9be0-02f343e34b39","keyword":"(<span style=\"color:red\">Mg</span> <SUB>1-x</SUB> Zn<SUB>x</SUB>)<SUB><span style=\"color:red\">2</span></SUB> <span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB> ","originalKeyword":"(Mg <SUB>1-x</SUB> Zn<SUB>x</SUB>)<SUB>2</SUB> SiO<SUB>4</SUB> "},{"id":"151aaf1a-9790-40fd-8ae5-0ac6207a8c2b","keyword":" ceramics","originalKeyword":" ceramics"},{"id":"746b29ff-dcc9-451c-8a5e-220501491cf5","keyword":" microwave properties","originalKeyword":" microwave properties"}],"language":"zh","publisherId":"1000-324X_2010_3_4","title":"(<span style=\"color:red\">Mg</span><SUB>1-x</SUB>Zn<SUB>x</SUB>)<SUB><span style=\"color:red\">2</span></SUB> <span style=\"color:red\">SiO</span><SUB><span style=\"color:red\">4</span></SUB> (0≤x≤1)陶瓷微波介电性能研究","volume":"25","year":"2010"},{"abstractinfo":"The microstructure and orientation relationships of ZK60A magnesium alloy matrix composite reinforced with <span style=\"color:red\">SiC</span> whiskers and B<span style=\"color:red\">4</span>C particles have been studied by means of transmission electron microscopy and high-resolution electron microscopy. MgO nanocrystalline particles are formed at <span style=\"color:red\">SiC</span>/<span style=\"color:red\">Mg</span> interfaces with a cube-on-cube orientation relationship with <span style=\"color:red\">SiC</span> whiskers. MgB<span style=\"color:red\">2</span> nanorods are formed near the B<span style=\"color:red\">4</span>C particles. Two types of orientation relationships between the <span style=\"color:red\">SiC</span> whisker and <span style=\"color:red\">Mg</span> are observed, which are [(1) over bar 11](<span style=\"color:red\">Sic</span>) parallel to 1 [0001]<span style=\"color:red\">Mg</span> and (02 (21) over tilde)(<span style=\"color:red\">Sic</span>) parallel to(11 (<span style=\"color:red\">2</span>) over bar0)(<span style=\"color:red\">Mg</span>), and [(1) over bar 11](<span style=\"color:red\">SiC</span>)parallel to[11 (<span style=\"color:red\">2</span>) over bar0](<span style=\"color:red\">Mg</span>) and (02 (<span style=\"color:red\">2</span>) over bar)(<span style=\"color:red\">SiC</span>)parallel to (0 112),,,,,,. Geometrically, [(1) over bar 11](<span style=\"color:red\">SiC</span>)parallel to [0001]<span style=\"color:red\">Mg</span> and (02 (<span style=\"color:red\">2</span>) over bar)(<span style=\"color:red\">SiC</span>)parallel to (01 (1) over bar0)<span style=\"color:red\">Mg</span> is more favorable than [I I I]sjCjj and (02 (<span style=\"color:red\">2</span>) over bar)(<span style=\"color:red\">SiC</span>)parallel to (01 (1) over bar<span style=\"color:red\">2</span>)(<span style=\"color:red\">Mg</span>). (c) 2007 Elsevier B.V. All rights reserved.","authors":[],"categoryName":"|","doi":"","fpage":"4884","id":"bcb0d231-4fd8-4496-961a-49c20ad06cb3","issue":"27","journal":{"abbrevTitle":"ML","id":"90b15a58-51fc-41ad-8509-c2692f6a3f6e","issnPpub":"0167-577X","publisherId":"ML","title":"Materials Letters"},"keywords":[{"id":"bbdc5fa7-4c63-4d0b-b4fc-777fc97dda64","keyword":"composite materials;microstructure;electron microscopy;orientation;relationship;magnesium-alloy;interface","originalKeyword":"composite materials;microstructure;electron microscopy;orientation;relationship;magnesium-alloy;interface"}],"language":"en","publisherId":"0167-577X_2007_27_1","title":"Microstructure and orientation relationships of <span style=\"color:red\">Mg</span> alloy matrix composite reinforced with <span style=\"color:red\">SiC</span> whiskers and B<span style=\"color:red\">4</span>C particles","volume":"61","year":"2007"}],"totalpage":9860,"totalrecord":98600}