欢迎登录材料期刊网

材料期刊网

高级检索

采用真空热蒸发技术在石英玻璃衬底上蒸镀约400 nm的铝膜,并在空气中580 ℃的条件下退火1 h.在退火过程中Al与石英中的SiO2反应形成纳米硅nc-Si: (Al2O3+SiO2)复合膜.利用X射线衍射(XRD)、拉曼散射(Raman)及扫描电镜(SEM)等方法研究了薄膜的结构特性.测得膜厚约为760 nm,估算出薄膜中纳米硅(nc-Si)的平均尺寸约为25 nm.实验发现该nc-Si: (Al2O3+SiO2)复合膜有热电特性,研究了其电阻率及Seebeck系数随温度(293 ~413 K)的变化关系,在293 K和413 K该薄膜的Seebeck系数分别约为-624 μV/K和-225 μV/K.

参考文献

[1] Feng Xiao;Carlos Hangarter;Bongyoung Yoo;Youngwoo Rheem;Kyu-Hwan Lee;Nosang V. Myung .Recent progress in electrodeposition of thermoelectric thin films and nanostructures[J].Electrochimica Acta,2008(28):8103-8117.
[2] Giani A;Oulouz A;Pascal-Delannoy F et al.Growth of Bi2Te3 and Sb2Te3 Thin Films by MOCVD[J].Materials Science and Engineering B,1999,64:19-24.
[3] Beyer H.;Nurnus J.;Bottner H.;Lambrecht A.;Wagner E.;Bauer G. .High thermoelectric figure of merit ZT in PbTe and Bi2Te3-based superlattices by a reduction of the thermal conductivity[J].Physica, E. Low-dimensional systems & nanostructures,2002(2/4):965-968.
[4] 赵新兵,曹一琦,朱铁军.纳米结构Bi2Te3基热电材料的溶剂热合成[J].材料研究学报,2006(04):337-345.
[5] 王晓琳,姜洪义,任卫.SPS法制备Bi2Te3基热电合金的热电性能[J].功能材料,2009(01):40-42.
[6] Taichao Su;Xiaopeng Jia;Hongan Ma .Thermoelectric properties of nonstoichiometric PbTe prepared by HPHT[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2009(1/2):410-413.
[7] Balandin A.;Wang KL. .Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well[J].Physical Review.B.Condensed Matter,1998(3):1544-1549.
[8] Whitlow LW.;Hirano T. .SUPERLATTICE APPLICATIONS TO THERMOELECTRICITY[J].Journal of Applied Physics,1995(9):5460-5466.
[9] 高原文,何月洲,朱林利.多晶块材热电材料Seebeck系数的晶粒尺寸效应[J].科学通报,2009(21):3278-3282.
[10] Langford J I;Wilson A J C .Scherrer after Sixty Years:A Survey and Some New Results in the Determination of Crystallite Size[J].Journal of Applied Crystallography,1978,11:102-113.
[11] 胡志华,廖显伯,刁宏伟,夏朝凤,曾湘波,郝会颖,孔光临.p型纳米硅与a-Si∶H不锈钢底衬nip太阳电池[J].物理学报,2005(06):2945-2949.
[12] 张世斌,廖显伯,安龙,杨富华,孔光临,王永谦,徐艳月,陈长勇,刁宏伟.非晶/微晶过渡区域硅薄膜的微区喇曼散射研究[J].物理学报,2002(08):1811-1815.
[13] Guozhen Yue;J. D. Lorentzen;Jing Lin .Photoluminescence and Raman studies in thin-film materials:Transition from amorphous to microcrystalline silicon[J].Applied Physics Letters,1999(4):492-494.
[14] Iqbal Z;Vepiek S .Raman Scattering from Hydrogenated Microcrystalline and Amorphous Silicon[J].Journal of Physics C:Solid State Physics,1982,15:377-392.
[15] Nast O.;Koschier LM.;Sproul AB.;Wenham SR.;Puzzer T. .Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature[J].Applied physics letters,1998(22):3214-3216.
[16] Widenborg PI.;Aberle AG. .Surface morphology of poly-Si films made by aluminium-induced crystallisation on glass substrates[J].Journal of Crystal Growth,2002(3/4):270-282.
[17] 夏冬林,王慧芳,石正忠,张兴良,李蔚.电场辅助铝诱导晶化非晶硅薄膜[J].人工晶体学报,2010(04):862-866,871.
[18] Oliver Nast;Stephan Brehme;Dirk H. Neuhaus;Stuart R. Wenham .Polycrystalline silicon thin films on glass by aluminum-induced crystallization[J].IEEE Transactions on Electron Devices,1999(10):2062-2068.
[19] Yonekubo S.;Onuma Y.;Kamimura K. .THERMOELECTRIC POWER OF POLYCRYSTALLINE SI FILMS PREPARED BY MICROWAVE PLASMA CHEMICAL VAPOUR DEPOSITION[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(1/2):159-161.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%