采用锂基触媒(Li3N)和六方氮化硼(hBN)为原料,在静态高温高压条件下加入(270/325目)籽晶批量合成出了大颗粒立方氮化硼(cBN)单晶(＞70目).通过X射线衍射仪(XRD)对触媒层内物相进行标定,采用K值法、绝热法、RIR值等理论方法,计算出样品触媒层内各物相的质量分数,比较了单晶合成效果好与差的触媒层内物相含量的差别;利用扫描电子显微镜(SEM)对样品触媒层的形貌进行观察,比较了单晶合成效果好与差的触媒层形貌的差别.结果表明:cBN单晶合成效果不同,其触媒组织结构有着明显的差异.当单晶合成效果较好时,触媒层中Li3BN2的含量为49％,cBN的含量为5％,hBN的含量为46％,触媒层内存在较均匀的熔融球状组织和管状组织,且离单晶表面越近管状组织越多;当单晶合成效果较差时,触媒层中Li3BN2的含量为10％,cBN的含量为49％,hBN的含量为41％,触媒层内只存在熔融球状组织.分析认为,触媒层中的cBN和Li3BN2的含量是影响大颗粒cBN单晶合成效果的主要因素.
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