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  4. 硅纳米线光致发光的原理及研究进展

材料导报, 2012, 26(21): 135-141.

硅纳米线光致发光的原理及研究进展

杨丽娇 1, , 王金良 2, , 杨成涛 3, , 梅丽润 4,

1.北京航空航天大学物理学院,北京100191

2.北京航空航天大学物理学院,北京100191

3.北京航空航天大学物理学院,北京100191

4.北京航空航天大学物理学院,北京100191

基金项目:   国家自然科学基金(50772006)  

关键词： 硅纳米线 , 光致发光 , 量子限制效应

Photoluminescence Principle and Research Progress of Silicon Nanowires

系统地介绍了导致硅纳米线(SiNWs)光致发光(PL)的主要原理,如量子限制效应、量子尺寸效应、硅纳米颗粒发光机理和杂质缺陷发光机理.同时从SiNWs的直径、测试温度、SiNWs外部包覆层、SiNWs的形态等几个方面出发,详细地归纳总结了近十多年来国内外对SiNWs的PL原理的研究成果及进展.

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