采用低能Ar+离子束辅助沉积方法,在Mo/Si(100)基底上沉积Pt膜,离子/原子到达比分别为0.1、0.2、0.3.若Ar+离子的入射角为0°,XRD谱分析表明,沉积的Pt膜均呈(111)和(200)混合晶向;当Ar+离子的入射角为45°,沉积的Pt膜均呈很强的(111)择优取向.因此若合理控制Ar+离子束的入射角,可在Mo/Si(100)衬底上制备出具有显著择优取向的Pt(111)薄膜.本文采用Monte Carlo方法模拟低能Ar+离子注入 Pt单晶所引起的原子级联碰撞过程,得出Ar+离子入射单晶铂(200)晶面时,Ar+离子的溅射率与入射角的关系,对Pt膜择优取向的机理作了初步的探讨和分析.
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