Amorphous silicon (a-Si) thin films were deposited on glass substrate by PECVD,and polycrystalline silicon (poly-Si) thin films were prepared by aluminum-induced crystallization (AIC). The effects of annealing temperature on the microstructure and morphology were investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400 ℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ℃ for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing temperature.
参考文献
| [1] | Seek-Woon Lee;Seung-Ki Joo .Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization[J].IEEE Electron Device Letters,1996(4):160-162. |
| [2] | NAST Oliver;Brehme Stephan;Pritchard Stephen et al.Aluminum-induced Crystallization of Silicon on Glass for Thin-film Solar Cells[J].Solar Energy Materials and Solar Cells,2001,65:385-392. |
| [3] | J. B. Boyce;R. T. Fulks;J. Ho;R. Lau;J. P. Lu;P. Mei;R. A. Street;K. F. Van Schuylenbergh;Y. Wang .Laser processing of amorphous silicon for large-area polysilicon imagers[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1/2):137-142. |
| [4] | Terada N;Matsuyama T;Baba T et al.High-quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method[J].Journal of Non-Crystalline Solids,1996,198-200:940-944. |
| [5] | Kuriyama H;Kiyama S;Noguchi S et al.Enlargement of P-Si Film Grain Size by Excimer Laser Annealing and its Application to High-performance p-Si Thin Film Transistor[J].Japanese Journal of Applied Physics,1991,30(12B):3700-3703. |
| [6] | Haque MS.;Brown WD.;Naseem HA. .ALUMINUM-INDUCED CRYSTALLIZATION AND COUNTER-DOPING OF PHOSPHOROUS-DOPED HYDROGENATED AMORPHOUS SILICON AT LOW TEMPERATURES[J].Journal of Applied Physics,1996(10):7529-7536. |
| [7] | Russell S W;Li Jian;Mayer J W .In Situ Observation of Fractal Growth During a-Si Crystallization in a Cu3Si Matrix[J].Journal of Applied Physics,1991,70(09):5153-5155. |
| [8] | Hultman L;Robertsson A;Hentzell H T G et al.Crystallization of Amorphous Silicon During Thin-film Gold Reaction[J].Journal of Applied Physics,1987,62(09):3647-3655. |
| [9] | Bo Bian;Jian Yie;Boquan Li et al.Fractal Formation in a-Si:H/Ag/a-Si:H Films after Annealing[J].Journal of Applied Physics,1993,73(11):7402-7406. |
| [10] | Shahidul H M;Naseem H A;Brown W D .Interaction of Aluminum with Hydrogenated Amorphous Silicon at Low Temperatures[J].Journal of Applied Physics,1994,75(08):3928-3935. |
| [11] | Dimova-Malinovska D;Angelov O;Sendova-Vassileva M;Kamenova M;Pivin JC;Pramatarova L .Polycrystalline silicon thin films obtained by Ni-induced crystallization on glass substrate[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2004(2/3):151-154. |
| [12] | Pihan E;Slaoui A;Cabarrocas P R et al.Polycrystalline Silicon Films by Aluminum-induced Crystallization:Growth Process vs.Silicon Deposition Method[J].Thin Solid Films,2004,451-452:328-333. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%