铸锭中过高的杂质浓度是影响铸造多晶硅太阳电池效率的主要因素之一.铸锭生长过程中的杂质主要有C、N、O、金属离子及固体颗粒SiC和Si3 N4.这些杂质能够降低晶片中少数载流子的寿命及太阳电池的填充因子；同时固体颗粒会造成切片过程的断线和晶片表面产生划痕.设计了一种新的方法生长大晶粒多晶硅,对石墨垫板进行刻槽处理,并采用数值模拟的方法模拟了该生长过程杂质的传输.模拟结果表明,刻槽的深度明显影响着初始生长时结晶界面上O、C和N的分布；同时刻槽深度越大,生长速率越快,越能够抑制晶体中SiC和Si3N4的形成.
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