La0.5Sr0.5CoO3/Pb(Zr0.4Ti0.6)O3/La0.5Sr0.5CoO3铁电电容器的结构和性能研究

人工晶体学报, 2010, 39(2): 350-364.

La0.5Sr0.5CoO3/Pb(Zr0.4Ti0.6)O3/La0.5Sr0.5CoO3铁电电容器的结构和性能研究

陈江恩 ^1, , 刘保亭 ^2, , 孙杰 ^3, , 郭延岭 ^4, , 马蕾 ^5, , 娄建忠 ^6, , 彭英才 ^7,

1.河北大学物理科学与技术学院,保定,071002;河北大学电子信息工程学院,保定,071002

2.河北大学物理科学与技术学院,保定,071002

3.河北大学物理科学与技术学院,保定,071002;河北大学电子信息工程学院,保定,071002

4.河北大学电子信息工程学院,保定,071002

5.河北大学电子信息工程学院,保定,071002

6.河北大学电子信息工程学院,保定,071002

7.河北大学电子信息工程学院,保定,071002

基金项目: 河北省自然科学基金(E2008000620;E2009000207) 国家自然科学基金(60876055) 教育部科学技术研究重点项目(207013) 河北省应用基础研究计划重点基础研究项目(08965124D)

关键词：铁电电容器 , PZT , 外延薄膜 , 导电机制

Structure and Properties of La0.5Sr0.5CoO3/Pb(Zr0.4Ti0.6)O3/La0.5Sr0.5CoO3 Ferroelectric Capacitor

采用磁控溅射法和脉冲激光沉积法,在SrTiO3(001)衬底上制备了La0.5Sr0.5CoO3(70 nm)/Pb(Zr0.4Ti0.6)O3(70 nm)/La0.5Sr0.5CoO3(70 nm) (LSCO/PZT/LSCO)铁电电容器异质结.X射线衍射结果表明:LSCO和PZT薄膜均为外延结构.在5 V的外加电压下, LSCO/PZT/LSCO电容器具有较低的矫顽电压(0.49 V),较高的剩余极化强度(41.7 μC/cm2 )和较低的漏电流密度(1.97×10-5 A/cm2),LSCO/PZT/LSCO电容器的最大介电常数为1073.漏电流的分析表明:当外加电压小于0.6 V时,电容器满足欧姆导电机制;当外加电压大于0.6 V时,符合空间电荷限制电流(SCLC)导电机制.

参考文献

[1]	B. T. Liu;K. Maki;S. Aggarwal;B. Nagaraj;V. Nagarajan;L. Salamanca-Riba;R. Ramesh;A. M. Dhote;O. Auciello .Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer[J].Applied physics letters,2002(19):3599-3601.
[2]	D. Wu;I. Kunishima;S. Roberts;A. Gruverman .Spatial variations in local switching parameters of ferroelectric random access memory capacitors[J].Applied physics letters,2009(9):092901-1-092901-3.
[3]	Pintilie L;Lisca M;Alexe M .Polarization reversal and capacitance-voltage characteristic of epitaxial Pb(Zr,Ti)O-3 layers[J].Applied physics letters,2005(19):2902-1-2902-3-0.
[4]	Gun Hwan Kim;Hyun Ju Lee;An Quan Jiang;Min Hyuk Park;Cheol Seong Hwang .An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O_(3) thin film capacitor using the switching transient current measurements[J].Journal of Applied Physics,2009(4):044106-1-044106-5-0.
[5]	Kwi Young Yun;Dan Ricinschi;Takeshi Kanashima;Masanori Okuyama .Enhancement of electrical properties in polycrystalline BiFeO_(3) thin films[J].Applied physics letters,2006(19):192902-1-192902-3-0.
[6]	L. Feigl;E. Pippel;L. Pintilie;M. Alexe;D. Hesse .Chromium doping of epitaxial PbZr_(0.2)Ti_(0.8)O_(3) thin films[J].Journal of Applied Physics,2009(12):126103-1-126103-3.
[7]	V. A. Maroni;Y. Li;D. M. Feldmann;Q. X. Jia .Correlation between cation disorder and flux pinning in the YBa_(2)Cu_(3)O_(7) coated conductor[J].Journal of Applied Physics,2007(11):113909-1-113909-5-0.
[8]	T. Kawae;Y. Terauchi;H. Tsuda;M. Kumeda;A. Morimoto .Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO_(3) thin films[J].Applied physics letters,2009(11):112904-1-112904-3-0.
[9]	Lee HN;Nakhmanson SM;Chisholm MF;Christen HM;Rabe KM;Vanderbilt D .Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics[J].Physical review letters,2007(21):7602-1-7602-4-0.
[10]	L. Pintilie;C. Dragoi;Y. H. Chu;L. W. Martin;R. Ramesh;M. Alexe .Orientation-dependent potential barriers in case of epitaxial Pt-BiFeO_(3)-SrRuO_(3) capacitors[J].Applied physics letters,2009(23):232902-1--232902-3-0.
[11]	Controlling crystallization of Pb(Zr,Ti)O_(3) thin films on IrO_(2) electrodes at low temperature through interface engineering[J].Applied physics letters,2003(8):1263-1265.
[12]	周阳,仇满德,付跃举,邢金柱,霍骥川,彭英才,刘保亭.蓝宝石衬底上磁控溅射法室温制备外延ZnO薄膜[J].人工晶体学报,2009(01):74-78.
[13]	B.T. Liu;C.S. Cheng;R. Li .Influence of LaNiO_3 bottom electrode on the structural and physical properties of ferroelectric capacitors[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2007(1/2):276-280.
[14]	B. T. Liu;C. S. Cheng;F. Li;L. Ma;Q. X. Zhao;Z. Yan;D. Q. Wu;C. R. Li;Y. Wang;X. H. Li;X. Y. Zhang .Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si[J].Applied physics letters,2006(25):252903-1-252903-3-0.
[15]	B. T. Liu;X. B. Yan;X. Zhang;C. S. Cheng;F. Li;F. Bian;Q. X. Zhao;Q. L. Guo;Y. L. Wang;X. H. Li;X. Y. Zhang;C. R. Li;Y. S. Wang .Barrier performance of ultrathin Ni-Ti film for integrating ferroelectric capacitors on Si[J].Applied physics letters,2007(14):142908-1-142908-3-0.
[16]	Y. K. Wang;T. Y. Tseng;Pang Lin .Enhanced ferroelectric properties of Pb(Zr_(0.53)Ti_(0.47))O_(3) thin films on SrRuO_(3)/Ru/SiO_(2)/Si substrates[J].Applied physics letters,2002(20):3790-3792.
[17]	Khan MA;Comyn TP;Bell AJ .Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt/Si substrates[J].Applied physics letters,2008(7):72908-1-72908-3-0.

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