为优化金属氧化物薄膜晶体管（ IGZO-TFT）的特性，采用射频磁控溅射法沉积IGZO薄膜作为半导体活性层，制备出具有刻蚀阻挡层（ Etch stop layer ，ESL）结构的IGZO TFT，在2．5 G试验线上研究了IGZO沉积过程中O2浓度、IGZO沉积后N2 O等离子体处理、ESL的制备温度和ESL沉积过程中N2 O／SiH4的比例等关键工艺条件对IGZO TFT的阈值电压（ Vth ）的影响。实验结果表明：IGZO沉积过程中O2浓度的增加、IGZO沉积后N2 O等离子体处理和ESL制备温度的降低会导致IGZO TFT的Vth正偏移。
In order to improve the performance of Indium Gallium Zinc Oxide Thin Film Transistor , IGZO-TFT with etch-stop layer was prepared in 2 .5 G experimental line .The effects of O 2 concentration during IGZO deposition , N2 O plasma treatment , the temperature of ESL deposition and the N 2 O/SiH4 ratio on the IGZO TFT Vth were systemically studied .The results show that the Vth would shift to positive position as the increasing of O 2 concentration , N2 O plasma treatment , and the decreasing of ESL deposition temperature .
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