采用射频磁控溅射法在玻璃基片上制备了VO2薄膜.采用XRD、AFM和红外光谱仪研究了不同基片温度所得薄膜的结构、光学性能和相变特性.实验结果表明,薄膜的结晶程度随基片温度的增加而增加,并且VO2具有(011)择优取向.基片温度在400℃以上的VO2薄膜均出现较好的相变特性,500℃时的薄膜相变特性最佳.薄膜的红外透过率随着沉积温度的增加而逐渐增加.
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