High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

材料科学技术（英）, 2012, 28(2): 132-136.

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

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1.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Tech- nology of China, Chengdu 610054, China

2.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Tech- nology of China, Chengdu 610054, China

3.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Tech- nology of China, Chengdu 610054, China

4.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Tech- nology of China, Chengdu 610054, China

5.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Tech- nology of China, Chengdu 610054, China

6.Department of Electronic and Computer Engineering, Hong Kong University of Science ＆ Technology, Hong Kong China

关键词： MOCVD生长 , GaAs衬底 , 失配位错 , 锑化镓 , 阵列 , 国际货币基金组织 , 半绝缘砷化镓 , 化学气相沉积法

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

Keywords： Interfacial misfit dislocations , Metalorganic chemical vapour deposition , Misfit dislocation , Hole mobility ,

The structural property of GaSb epilayers grown on semi-insulator GaAs （001） substrate by metalorganic chemical vapor deposition （MOCVD） using Triethylgallium （TEGa） and trimethylantimony （TMSb）, was investigated by variation of the Sb：Ga （V/Ill） ratio. An optimum V/Ill ratio of 1.4 was determined in our growth conditions. Using transmission electron microscopy （TEM）, we found that there was an interracial misfit dislocations （IMF） growth mode in our experiment, in which the large misfit strain between epilayer and substrate is relaxed by periodic 90 deg. IMF array at the hetero-epitaxial interface. The rms roughness of a 300 nm-thick GaSb layer is only 2.7 nm in a 10μm×10μm scan from atomic force microscopy （AFM） result. The best hole density and mobility of 300 nm GaSb epilayer are 5.27xi06 cm-3（1.20×106） and 553 cm2-V-l.s-1 （2340） at RT （77 K） from Hall measurement, respectively. These results indicate that the IMF growth mode can be used in MOCVD epitaxial technology similar to molecular beam epitaxy （MBE） technology to produce the thinner GaSb layer with low density of dislocations and other defects on GaAs substrate for the application of devices.

参考文献

[1]	S.H. Hu;C.H. Sun;Y. Sun;J. Ge;R. Wang;J. Wu;Q.W. Wang;N. Dai .High quality of InAsSb epilayer with cutoff wavelength longer than 10 μm grown on GaAs by the modified LPE technique[J].Journal of Crystal Growth,2009(8):2309-2312.
[2]	A. Jallipalli;G. Balakrishnan;S.H. Huang;A. Khoshakhlagh;L.R. Dawson;L.R. Dawson .Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials[J].Journal of Crystal Growth,2007(2):449-455.

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材料期刊网

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

参考文献