我们用热丝辅助MW ECRCVD系统,在热丝温度分别为0、1350、1400、1450、1500、1600和1700℃时制备出a-Si:H薄膜.通过膜厚测定,红外光谱分析光、暗电导测量等手段,分析了其沉积速率、光敏性及光学带隙的变化规律.结果表明沉积速率和薄膜质量均得到明显的提高,沉积速率超过3nm/s,光暗电导之比提高到6×105.找到最佳辅助热丝温度为1450℃.通过对带隙值的分析,发现当带隙值在1.6～1.7范围内时,薄膜几乎都具有105以上的光暗电导之比.
参考文献
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