在调制掺杂（Si）Al0.27Ga0.73As／GaAs多量子阱结构的光致发光谱中，观测到一个强发光峰及多个低能弱发光峰．强发光峰是量子阱中基态电子与重空穴复合，即激子复合形成的，其低温发光线形可用Voigt函数拟合.低能弱峰是势垒层Al0.27Ga0.73As中DX中心能级上的电子跃迁到SiAs原子而引起，由此确定DX中心有四个能级，其激活能分别为0．35、037、0．39、0．41eV
The photolumenescence spectra of modulation doing GaAs/Al0.27Ga0.73As multiquantum well structure were measured. There are a strong luminescence peak
and several low energy weak peaks in the luminescence spectra. The strong one arises from transition of electron at ground state in well to heavy hole and these low energy
weak peaks may be attributed to transition of electron at DX centers in Al0.27Ga0.73As to SiAs atoms. On this view, we can come to the conclusion
that the DX centers in Si-doped AlGaAs appear as four levels and their activation energies are about 0.35eV, 0.37eV, 0.39eV and 0.41eV, respectively.
参考文献
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