硼扩散被广泛应用于n型硅基的p-n结制结工艺,然而硼扩散难免会在硅片表面形成一层很薄的的富硼层,该层由于富集无活性硼原子会严重影响电池性能.本研究制备HF-HNO3化学腐蚀液来去除富硼层,采用该方法去除富硼层后的硅片少子寿命从26.829μs增加到69.106μs;WCT-120测得一个光照下Vα从610mv增加到了625mv,发射极饱和电流密度显著降低;去除富硼层后的方块电阻均匀性表现良好,甚至比采用传统后氧化法更具优势.虽然反射率有细微增加,但是对于镀完氮化硅减反膜后腐蚀所带来的反射率升高只有0.13％,因此,认为该方法可以成功应用到富硼层的去除中.
参考文献
| [1] | D.Macdonald;L.J.Geerligs .Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon[J].Applied Physics Letters,2004,85(18):4061-4063. |
| [2] | J. E. Cotter;J. H. Guo;P. J. Cousins;M. D. Abbott;F. W. Chen;K. C. Fisher .P-Type Versus n-Type Silicon Wafers: Prospects for High-Efficiency Commercial Silicon Solar Cells[J].IEEE Transactions on Electron Devices,2006(8):1893-1901. |
| [3] | Fischer H;Pschunder W.Investigation of photon and thermal induced changes in silicon solar cells[A].Palo Alto,CA,USA,1973 |
| [4] | D.De Ceuster;P.Cousins;D.Rose;D.Vicente,P.Tipones,W.Mulligan.Low cost,high volume production of 》 20％ efficiency solar cells[A].Milan,Italy,2007:816-819. |
| [5] | ZHANG Chun-Lei,DU Hui-Jing,ZHU Jian-Zhuo,XU Tian-Fu,FANG Xiao-Yong.Enhanced Photovoltaic Properties of Gradient Doping Solar Cells[J].中国物理快报（英文版）,2012(12):196-199. |
| [6] | J.Benick B;Hoex G;Dingemans W.M.M;Kessels A.Richter M.Hermle,S.W.Glunz.HIGH-EFFICIENCY N-TYPE SILICON SOLAR CELLS WITH FRONT SIDE BORON EMITTER[A].Hamburg,Germany,2009:863-870. |
| [7] | Korte, L.;Conrad, E.;Angermann, H.;Stangl, R.;Schmidt, M. .Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2009(6/7):905-910. |
| [8] | 冯仁华,张溪文,韩高荣.硼掺杂对PECVD制备的纳米非晶硅薄膜电学行为的影响[J].材料科学与工程学报,2008(02):226-228,216. |
| [9] | F.Book;T.Wiedenmann.Large-area N-type Silicon solar cells with printed contacts and Aluminum-alloyed Rear Emitter[A].Valencia,Spain,2010:1044-1047. |
| [10] | M.A.Kessler;T.Ohrdes;B.Wolpensinger;R.Bock,N.P.Harder.Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBR3 boron diffusion processes[A].,2009:1556-1561. |
| [11] | Michael Andreas Kessler;Tobias Ohrdes;Bettina Wolpensinger;Nils-Peter Harder .Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr_3 diffusion processes[J].Semiconductor Science and Technology,2010(5):1.1-1.9. |
| [12] | Duran,Claudia.Bifacial Solar Cells:High Efficiency Design,Characterization,Modules and Applications[M].Konstanz:Bibliothek der Universit(a)t Konstanz,2012:12-14. |
| [13] | Young Joon Cho;Hyo Sik Chang .Enhanced Boron Gettering Effect of n-Type Solar Grade Si Wafers by In Situ Oxidation[J].Metals and Materials International,2013(6):1377-1380. |
| [14] | Li XQ;Tao LZ;Xi ZY.Boron Diffused Emitter Etch Back and Passivation[A].TX,USA,2012:001073-001076. |
| [15] | D.Macdonald;H.Mackel;A.Cuevas.Recombination in n-and p-Type Silicon Emitters Contaminated with Iron[A].Waikoloa,HI,2006:952-955. |
| [16] | 郭志球,柳锡运,沈辉,刘正义.各向同性腐蚀法制备多晶硅绒面[J].材料科学与工程学报,2007(01):95-98. |
| [17] | 曾飞 .选择性发射极太阳电池及组件的研究[D].广州,中山大学,2012. |
| [18] | 王立娟,周炳卿,那日苏,金志欣,田晓.强碱弱酸盐溶液对单晶硅太阳能电池表面织构化的影响[J].材料科学与工程学报,2011(06):920-924. |
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