研究金属或半导体在溶胶中的电化学行为对电化学和溶胶-凝胶(sol-gel)法结合制备掺杂金属和半导体的复合凝胶薄膜有极大指导意义.用循环伏安(CV)和计时安培(CA)法研究了电化学和sol-gel法结合制备Cu-SiO2凝胶薄膜时不同pH值CuSO4硅溶胶中Cu在玻碳电极上的电沉积和电结晶行为.结果表明:在pH=1.0 ～3.0的CuSO4硅溶胶中,Cu2+的扩散系数在pH =2.0时最小,pH=1.0时较pH =3.0时大,这也是造成硅溶胶中pH =2.0时还原最难,pH =3.0时次之,pH=1.0时最易的原因;Cu在硅溶胶中的电沉积为Langmuir型吸附-三维瞬时成核机理;硅溶液中Cu2的传递系数均大于0.9,存在吸附层;Cu2在吸附过程的总放电量Qads随pH值增大而增大;Cu的成核数密度都随电位增大而增大,随pH值增大而减小,故pH值在1.0 ～3.0内越大越不利于制备Cu-SiO2薄膜.
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