{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"在兰州充气谱仪上,设计安装了一套新的焦平面探测系统,该系统包括飞行时间(TOF)探测器、盒型硅(Si-box)探测器阵列和反符合(Veto)探测器3部分.Si-box探测器阵列是由3块位置灵敏硅探测器(PSSD)和8块周边硅探测器(SSD)构成,它对注入核的α衰变的探测效率达到80%左右.Si-box探测器阵列与TOF探测器关联可以有效区分注入信号和α衰变信号.Veto探测器与Si-box探测器阵列和TOF探测器关联可以反符合掉高能轻粒子对注入信号和α衰变信号的干扰.简要介绍了PSSD的能量和位置刻度方法.这套探测器系统已经应用于40Ca+175Lu和40Ca+169Tm的实验.实验结果表明,该探测器系统具备很好的本底抑制能力,能够给出干净的α衰变能谱,结合能量-时间-位置关联测量方法可以实现对单原子的探测和鉴别,总体上达到了预期的设计要求.","authors":[{"authorName":"杨华彬","id":"d03896c1-08e2-4734-8d1d-9adb2ac26fbf","originalAuthorName":"杨华彬"},{"authorName":"郁琳","id":"6ca18a2b-0773-48f6-ba56-e4c958af8c8a","originalAuthorName":"郁琳"},{"authorName":"黄天衡","id":"73876895-3e1e-4762-8f21-c9ee0a8598a5","originalAuthorName":"黄天衡"},{"authorName":"张志远","id":"18d63014-6ebe-4c1b-a491-24bae232bdb2","originalAuthorName":"张志远"},{"authorName":"马龙","id":"47ed8a47-5839-4eb8-8b40-f252985b5300","originalAuthorName":"马龙"},{"authorName":"黄明辉","id":"9bdf0fb5-0d55-46db-99e9-b35218e97000","originalAuthorName":"黄明辉"},{"authorName":"李广顺","id":"46da7c57-db36-4db9-a36a-35a9d84ee534","originalAuthorName":"李广顺"},{"authorName":"吴晓蕾","id":"c8faf3dd-72f1-4bcb-a634-880bfbd68e76","originalAuthorName":"吴晓蕾"},{"authorName":"甘再国","id":"fe2574ea-ae70-42e5-9cad-63d81b880b40","originalAuthorName":"甘再国"}],"doi":"10.11804/NuclPhysRev.30.03.369","fpage":"369","id":"5e75b26c-36f2-4209-bccb-f252aab6a835","issue":"3","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"250570ef-08f6-4788-8a3d-5fd079fe31ff","keyword":"焦平面探测系统","originalKeyword":"焦平面探测系统"},{"id":"fc6b4959-b104-4c6e-8319-979c0c4a35ea","keyword":"飞行时间","originalKeyword":"飞行时间"},{"id":"06769306-5428-41c9-a316-9dca5f4315a4","keyword":"位置灵敏硅探测","originalKeyword":"位置灵敏硅探测"},{"id":"26924147-14e0-4c2c-b843-8b28bd39b7e6","keyword":"周边硅探测器","originalKeyword":"周边硅探测器"},{"id":"6a65648a-4af4-455e-aab4-0a33e69663cb","keyword":"充气谱仪","originalKeyword":"充气谱仪"},{"id":"7970b221-f3ae-48b9-abb2-397446cc8e18","keyword":"盒形硅探测器阵列","originalKeyword":"盒形硅探测器阵列"}],"language":"zh","publisherId":"yzhwlpl201303021","title":"兰州充气谱仪的焦平面探测系统","volume":"30","year":"2013"},{"abstractinfo":"介绍了由中国科学院近代物理研究所和北京大学微电子研究院联合研制的双面硅多条探测器的初步测试过程及测试结果。测试内容包括:探测器的电特性、能量分辨率、二维能谱、条间串扰(crosstalk)。在-25 V全耗尽偏压下,各条的反向漏电流均小于10 nA,对于5.486 MeV的α粒子,正面各条的能力分辨率在1.5%左右,条间串扰在6%左右;背面各条能量分辨率稍差,在3%左右,其条间串扰在1%左右。同时对进口的Micron BB1直流耦合单边读出的双面硅条探测器做了相同测试,并进行了性能对比。","authors":[{"authorName":"李占奎","id":"66413846-ef0d-4e7c-bda1-c4aaea39f55f","originalAuthorName":"李占奎"},{"authorName":"巩伟","id":"b0ed6459-cda4-48d3-9580-6e555ad85507","originalAuthorName":"巩伟"},{"authorName":"谭继廉","id":"591925a5-82eb-4cdd-873d-82e3b3f9f229","originalAuthorName":"谭继廉"},{"authorName":"魏计房","id":"10a71c64-a8bd-4e94-b3b5-ec5eeb9e0d4c","originalAuthorName":"魏计房"},{"authorName":"王柱生","id":"ebedae39-054c-4145-8b4b-9a05cf52777a","originalAuthorName":"王柱生"},{"authorName":"韩励想","id":"d4d409c0-6d68-4b65-ba84-9ac3c03abf5b","originalAuthorName":"韩励想"},{"authorName":"田大宇","id":"c3c64a4d-0be0-474e-98df-68bda7e0ae4d","originalAuthorName":"田大宇"},{"authorName":"于民","id":"e429a169-b67c-4e47-ab91-c08061f72e37","originalAuthorName":"于民"},{"authorName":"王金延","id":"4ee223c3-f51d-4aa9-9de5-e1ef98d9f1fa","originalAuthorName":"王金延"},{"authorName":"张录","id":"d77ed278-7b38-46a9-ae68-afc7ec97816a","originalAuthorName":"张录"}],"doi":"","fpage":"305","id":"03d5416d-470b-41d0-b075-d0b2284e1752","issue":"3","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"41a0cc31-322a-43f7-a8b4-49511ec11b72","keyword":"双面硅条探测器","originalKeyword":"双面硅条探测器"},{"id":"9cab1b79-e717-4b69-a610-edeec765d493","keyword":"电性能","originalKeyword":"电性能"},{"id":"b2f04d28-f405-4178-8acb-41dc23b262f1","keyword":"能量分辨率","originalKeyword":"能量分辨率"},{"id":"14525c07-6757-4282-ae93-4e5d2825c593","keyword":"条间串扰","originalKeyword":"条间串扰"}],"language":"zh","publisherId":"yzhwlpl201103009","title":"双面硅多条探测器的测试","volume":"28","year":"2011"},{"abstractinfo":"介绍了利用硅探测器的脉冲形状甄别进行粒子鉴别的原理.详细叙述了基于数字化方法的脉冲形状甄别的实现.采样频率和位数是数字化方法的两个重要参数.对于硅探测器信号,采用100 MS/s,12 bit的Digitizer可以满足脉冲形状甄别法对时间分辨的要求.同时对该方法粒子鉴别的特征和能量阈值做了简要的分析和对比.粒子背面入射硅探测器的所得的阈值低于正面入射的情况.例如对于氖周围的同位素,背面入射情况的阈值约为100 MeV,为正面入射情况下鉴别阈值的二分之一,相当与?E-E方法中?E探测器厚度约为60μm情况下的阈值.最后定性讨论了硅探测器的电阻率不均匀性和沟道效应对粒子鉴别性能的影响.","authors":[{"authorName":"李朋杰","id":"0f8521f1-b9cf-4441-95f0-9e08a926ae19","originalAuthorName":"李朋杰"},{"authorName":"李智焕","id":"f2fc72df-4fda-46c1-a324-88834bbb7bf3","originalAuthorName":"李智焕"},{"authorName":"陈志强","id":"b8f03290-1a75-4ac1-bcf6-890d86353ea7","originalAuthorName":"陈志强"},{"authorName":"吴鸿毅","id":"ee787b87-a749-4f19-a85b-c1cc26862068","originalAuthorName":"吴鸿毅"},{"authorName":"田正阳","id":"33ad221e-df1d-4210-9bc4-0f4a8f6c90a9","originalAuthorName":"田正阳"},{"authorName":"蒋伟","id":"2f9d87fd-574f-40a3-bde9-03d32e94c936","originalAuthorName":"蒋伟"},{"authorName":"李晶","id":"bddb1f35-8864-4a67-8178-b69d8fb5b828","originalAuthorName":"李晶"},{"authorName":"冯骏","id":"227d60fb-3a16-4e77-8e7e-340c2cf30862","originalAuthorName":"冯骏"},{"authorName":"臧宏亮","id":"13954ae8-f336-4026-b3f0-c2848e81de2a","originalAuthorName":"臧宏亮"},{"authorName":"刘强","id":"9dc40b5b-ec8f-4f68-b169-1a27d97e58ec","originalAuthorName":"刘强"},{"authorName":"牛晨阳","id":"bf810727-0bbe-44b0-800d-2aa977e0358c","originalAuthorName":"牛晨阳"},{"authorName":"杨彪","id":"e0ca0b9e-4132-46d0-a082-9a1fed596e6f","originalAuthorName":"杨彪"},{"authorName":"陶龙春","id":"6336b9dd-8674-413f-8822-a6eb3dfaba2c","originalAuthorName":"陶龙春"},{"authorName":"张允","id":"2f59bca8-1363-4150-8547-3e1877bcefa8","originalAuthorName":"张允"},{"authorName":"孙晓慧","id":"32649541-697c-4bf8-a706-3e85de943792","originalAuthorName":"孙晓慧"},{"authorName":"王翔","id":"c72af3c1-8ab0-4853-ac90-ba464f54e80c","originalAuthorName":"王翔"},{"authorName":"刘洋","id":"b2b1b1e9-ea07-435b-aca9-13cfb2ba86ad","originalAuthorName":"刘洋"},{"authorName":"李奇特","id":"db573090-1377-44d8-be53-625948eeffdc","originalAuthorName":"李奇特"},{"authorName":"楼建玲","id":"577f6e60-e9e8-4310-95c1-cb7821e9c02a","originalAuthorName":"楼建玲"},{"authorName":"李湘庆","id":"dcabfce0-9c00-4d2f-a524-e9723c4ff7c0","originalAuthorName":"李湘庆"},{"authorName":"华辉","id":"56b2397c-ebd9-445b-88b4-9641fdf42a5d","originalAuthorName":"华辉"},{"authorName":"江栋兴","id":"91d434b3-ed67-4de7-9599-721ba16214b8","originalAuthorName":"江栋兴"},{"authorName":"叶沿林","id":"70304c0e-eed7-4af5-a0db-5be0e083b423","originalAuthorName":"叶沿林"}],"doi":"10.11804/NuclPhysRev.34.02.177","fpage":"177","id":"f20567f8-cdd7-4456-aff4-39e8a47497ec","issue":"2","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"7b619532-095c-4225-a601-3cbcb6570ec6","keyword":"硅探测器","originalKeyword":"硅探测器"},{"id":"78a37828-9a9b-4e8c-a4a3-b2a479c16359","keyword":"脉冲形状甄别","originalKeyword":"脉冲形状甄别"},{"id":"d609f66e-f2cb-4b26-bfe6-73596fa6cc78","keyword":"上升时间","originalKeyword":"上升时间"},{"id":"8518f05a-171a-41bc-bec4-52cbd6f249d8","keyword":"数字化方法","originalKeyword":"数字化方法"},{"id":"f3b60795-565e-4239-8d5e-d017903cfdf3","keyword":"能量阈值","originalKeyword":"能量阈值"},{"id":"2c672023-0bbf-4022-9323-3fd1702322b5","keyword":"电阻率不均匀性","originalKeyword":"电阻率不均匀性"},{"id":"030428aa-5a32-4489-bf79-edaae21a7aa7","keyword":"沟道效应","originalKeyword":"沟道效应"}],"language":"zh","publisherId":"yzhwlpl201702009","title":"硅探测器的数字化脉冲形状甄别","volume":"34","year":"2017"},{"abstractinfo":"硅微条探测器因具有很强的位置分辨率与能量分辨率而在世界各大核物理实验室得到广泛应用。中国科学院近代物理研究所研制了性能优越、位置精度达到0.5 mm×0.5 mm的双面硅微条探测器,用于HIRFL-CSR的外靶实验终端谱仪(ETF)上,用作径迹测量以及?E-E望远镜系统?E的探测。硅微条探测器体积小、集成度高,利用柔性印刷电路板(FPCB)引出信号,配合ASIC芯片的前端电路,能够方便地给出每一条的能量信息和位置信息。在此详细阐述了在HIRFL-CSR的ETF上双面硅微条探测器阵列的搭建,并测量了放射源在真空中探测单元的能量分辨本领。结果表明,该硅条探测器的每个探测单元对5~9 MeV能量的α粒子的能量分辨率在1%左右。","authors":[{"authorName":"汪鹏飞","id":"b7e1acce-4665-4518-924d-9773513a9115","originalAuthorName":"汪鹏飞"},{"authorName":"李占奎","id":"4d66564b-0fd4-4a80-b83a-84984fdfd424","originalAuthorName":"李占奎"},{"authorName":"李海霞","id":"72086728-aa42-49ad-922b-8684fe030ef3","originalAuthorName":"李海霞"},{"authorName":"章学恒","id":"492b57f3-590b-4a44-83a6-4c99cda6017e","originalAuthorName":"章学恒"},{"authorName":"赵兴文","id":"2d8f634b-eaba-4339-9e0f-190c5fb9700c","originalAuthorName":"赵兴文"},{"authorName":"王秀华","id":"50c75562-ea12-4563-b563-3e4a2091ef76","originalAuthorName":"王秀华"},{"authorName":"谭继廉","id":"dc7195e8-0bf9-41e3-accc-822f0d0722eb","originalAuthorName":"谭继廉"},{"authorName":"刘凤琼","id":"a27f2178-0392-4c7c-ba53-f1f83479d782","originalAuthorName":"刘凤琼"},{"authorName":"李荣华","id":"ddc77afd-988c-4e0f-9fb7-ca5a12a0b7ac","originalAuthorName":"李荣华"},{"authorName":"王柱生","id":"89063bf1-1943-4323-b049-c10ae7642de9","originalAuthorName":"王柱生"},{"authorName":"陈翠红","id":"ac0e76ba-63d2-4fd8-9b46-243a7a8d3d61","originalAuthorName":"陈翠红"},{"authorName":"杨磊","id":"a314af16-538c-4694-9ea9-f98d4c45263e","originalAuthorName":"杨磊"},{"authorName":"祖凯玲","id":"1919bef5-f13a-4d67-be11-c835612bcdc2","originalAuthorName":"祖凯玲"},{"authorName":"戎欣娟","id":"eddd372d-54ec-498e-8062-0e7af014cd06","originalAuthorName":"戎欣娟"},{"authorName":"李春艳","id":"95d79b1f-3ae8-417b-a82a-17402e2b3a8c","originalAuthorName":"李春艳"},{"authorName":"卢子伟","id":"a0a2b840-b0c1-43c6-88e6-6866a2f00c5d","originalAuthorName":"卢子伟"}],"doi":"10.11804/NuclPhysRev.31.01.063","fpage":"63","id":"eef1aa5c-91e7-4869-9ead-7abc9adef6b9","issue":"1","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"aeafa6d0-78a0-4664-9345-ec1cbab82e21","keyword":"硅微条探测器阵列","originalKeyword":"硅微条探测器阵列"},{"id":"64a957b9-8f33-4d3e-8442-bce1e2b164c9","keyword":"前端ASIC","originalKeyword":"前端ASIC"},{"id":"3fbeda10-d8a6-4e58-b087-ba7937dab0e1","keyword":"柔性印刷电路板","originalKeyword":"柔性印刷电路板"},{"id":"9d6f143f-3223-445d-ba00-fa222e73d471","keyword":"能量分辨率","originalKeyword":"能量分辨率"}],"language":"zh","publisherId":"yzhwlpl201401012","title":"HIRFL-CSR外靶终端上硅微条探测器阵列的搭建","volume":"","year":"2014"},{"abstractinfo":"提出一种采用正面开口进行湿法腐蚀释放热电堆的结构,通过利用高精度光刻、LPCVD(low -pressure chemical vapor deposition)薄膜生长、IBE(ion beam etching)干法刻蚀、TMAH ((CH3)4NOH)腐蚀等微机械加工技术,设计并制作了CMOS兼容的微机械多晶硅热电堆红外探测器.实验得到的器件成品率达到90%以上,响应率为12.5 V/W,探测率1×107 cmHz1/2/W,为进一步大规模红外面阵研究奠定了基础.","authors":[{"authorName":"刘义冬","id":"c381fba6-1836-499d-b218-e4f693f759cf","originalAuthorName":"刘义冬"},{"authorName":"李铁","id":"b91c3640-fdfe-4d8d-8617-86328b1b98f8","originalAuthorName":"李铁"},{"authorName":"王翊","id":"2081eac4-2635-4310-a328-6d340b875dd3","originalAuthorName":"王翊"},{"authorName":"王跃林","id":"891741e0-5bc3-4cee-b35e-6326c6255df8","originalAuthorName":"王跃林"}],"doi":"10.3969/j.issn.1007-4252.2007.03.007","fpage":"226","id":"9e4f4f75-869a-4322-9ef9-0bbec45a4c42","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"0c61ca92-8785-4ded-aad4-71be17522e3d","keyword":"红外","originalKeyword":"红外"},{"id":"f9906a2b-e9b8-4eeb-be92-cfcbfb272d2c","keyword":"热电堆","originalKeyword":"热电堆"},{"id":"6c6b52ce-1bf7-410f-9ee2-8ee6919715ad","keyword":"微电子机械系统","originalKeyword":"微电子机械系统"}],"language":"zh","publisherId":"gnclyqjxb200703007","title":"CMOS兼容的微机械P/N多晶硅热电堆红外探测器","volume":"13","year":"2007"},{"abstractinfo":"为了精确测量keV能区的中子俘获截面,中国原子能科学研究院正在建造一台4π全吸收型γ探测装置??GTAF,锂玻璃探测器将会作为中子束流监视器测量中子能谱。利用5SDH-2加速器刻度了锂玻璃探测器在两个入射中子单能点(250和565 keV)的探测效率,并使用GEANT4和MCNP程序模拟计算了锂玻璃探测器的相对探测效率。通过归一化实验数据和模拟结果,得到了锂玻璃探测器在10 keV~1 MeV能区的中子探测效率曲线。对于把锂玻璃探测器测量得到的飞行时间谱转化为中子束流能谱,是一项非常重要的工作,同时为探测器效率刻度提供了新方法。","authors":[{"authorName":"张奇玮","id":"df9a7f18-2a75-421a-9a52-1d662b6e8131","originalAuthorName":"张奇玮"},{"authorName":"贺国珠","id":"e5206676-3663-4a86-82f1-50fcbcec09b7","originalAuthorName":"贺国珠"},{"authorName":"阮锡超","id":"ee8107ed-81b9-42e5-a5f2-522de1fb1dfd","originalAuthorName":"阮锡超"},{"authorName":"李霞","id":"606672e7-3dc6-4521-bfdf-749d34097166","originalAuthorName":"李霞"},{"authorName":"任杰","id":"adb1c4f2-825e-4593-a138-bcd233ccc0df","originalAuthorName":"任杰"},{"authorName":"周祖英","id":"9f4e2bb3-4d5c-41a3-8655-5e1b4d0ba866","originalAuthorName":"周祖英"}],"doi":"10.11804/NuclPhysRev.30.02.156","fpage":"156","id":"c232433f-6f1f-4c7f-b4cd-d0c67cb40ff2","issue":"2","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"4f5478ba-2583-45bf-9983-97e383f58e89","keyword":"γ全吸收型探测装置","originalKeyword":"γ全吸收型探测装置"},{"id":"7825eea7-b067-42c3-9c82-c0706f0d7c29","keyword":"锂玻璃探测器","originalKeyword":"锂玻璃探测器"},{"id":"546e0e74-ce8b-48e9-b161-9d4c9394a745","keyword":"探测效率","originalKeyword":"探测效率"},{"id":"8a9f91e5-78f0-41e1-8ed8-b9c0fb6d407c","keyword":"GEANT4","originalKeyword":"GEANT4"},{"id":"4eaa693a-dc64-4a41-9e5f-9ea724fc1ccb","keyword":"MCNP","originalKeyword":"MCNP"}],"language":"zh","publisherId":"yzhwlpl201302010","title":"锂玻璃探测器中子探测效率的刻度","volume":"","year":"2013"},{"abstractinfo":"PET设备中探测器的研发,一直是很活跃且具有高创新性的领域。提高现有基于闪烁晶体探测器的性能,研究适用于多模式成像设备(PET/CT和PET/MRI)的新型探测器,满足TOF和DOI技术的需求并促进其发展应用,构成PET探测器的几个主要研究方向。介绍了PET探测器在闪烁晶体、光电探测器和半导体探测器等方面的最新进展,指出未来最有潜力的探测器设计方案。关键词:正电子发射断层成像;辐射探测器;多模态成像;闪烁晶体;半导体探测器","authors":[{"authorName":"张斌","id":"476bb9f2-59da-454b-80d3-5b9213e4a17f","originalAuthorName":"张斌"},{"authorName":"赵书俊","id":"c8692f50-8660-41c1-bbeb-4ba635d3e2c4","originalAuthorName":"赵书俊"}],"doi":"","fpage":"259","id":"99b06cdf-6601-4b97-ac14-ecda8f129f8f","issue":"3","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"70a774cf-905a-4627-ae3b-2e741032553b","keyword":"正电子发射断层成像","originalKeyword":"正电子发射断层成像"},{"id":"824a63fc-bf36-444e-8770-14e29db727c9","keyword":"辐射探测器","originalKeyword":"辐射探测器"},{"id":"9aecbbff-c4ed-4e49-bfe9-111920c28bbb","keyword":"多模态成像","originalKeyword":"多模态成像"},{"id":"e3089267-fd9c-4d0b-9391-2dd123d9ad8c","keyword":"闪烁晶体","originalKeyword":"闪烁晶体"},{"id":"79e7f357-0f85-4e78-8ce4-b8d366b808ac","keyword":"半导体探测器","originalKeyword":"半导体探测器"}],"language":"zh","publisherId":"yzhwlpl201203009","title":"PET探测器技术的新进展","volume":"29","year":"2012"},{"abstractinfo":"介绍了一种利用鱼线做放大区间隔的MICROMEGAS探测器,灵敏面积为50mmX50mm.在Ar+C02 (10%)气体条件下,利用55Fe源5.9keV的X射线对MICROMEGAS探测器进行了初步测试:计数率大于103Hz的条件下,计数率坪长达到280V;当栅极电压在800V时能量分辨为30%;当增益高于104时打火率低于10-4;PCB板读出条周期为400μm条件下的位置分辨好于120μm.结果表明,研制的MICROMEGAS探测器达到了初步设计的基本要求.","authors":[{"authorName":"鲁辰桂","id":"ef9334ab-2770-4706-91de-227f06095bc3","originalAuthorName":"鲁辰桂"},{"authorName":"段利敏","id":"22dac115-2855-468b-977a-296f6b98a52c","originalAuthorName":"段利敏"},{"authorName":"杨贺润","id":"504ea806-1c8e-4f27-986d-c493758f4534","originalAuthorName":"杨贺润"},{"authorName":"马朋","id":"587a701d-b534-46ee-9bb0-6d742152f1c8","originalAuthorName":"马朋"},{"authorName":"唐述文","id":"088a4239-ff7a-4b07-9243-834e7f457f19","originalAuthorName":"唐述文"},{"authorName":"耿朋","id":"9d6426f1-9843-4c7f-bf7e-32aa417380bb","originalAuthorName":"耿朋"},{"authorName":"胡荣江","id":"dd9b944b-8163-496b-833e-2e70ea02f86d","originalAuthorName":"胡荣江"},{"authorName":"张金霞","id":"975622d3-9d2e-4d3b-aac4-14ba350daf14","originalAuthorName":"张金霞"},{"authorName":"李祖玉","id":"8eeea70a-2ac0-4070-b97f-c43651233afd","originalAuthorName":"李祖玉"}],"doi":"","fpage":"68","id":"5da22335-08b9-4017-b16b-665f27275348","issue":"1","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论 "},"keywords":[{"id":"4231fd7f-db23-4fd6-96ed-002fa430ea10","keyword":"计数率坪曲线","originalKeyword":"计数率坪曲线"},{"id":"9b6f8393-dbd6-4f3f-b7ef-048d25ce8402","keyword":"能量分辨","originalKeyword":"能量分辨"},{"id":"02e2921c-9350-44e8-b13c-d0d1b6c5ae75","keyword":"增益","originalKeyword":"增益"},{"id":"7d890f53-652b-44cb-9bf2-69a094a61989","keyword":"打火率","originalKeyword":"打火率"},{"id":"232f97dd-f9f4-48ca-bd09-6e1b3edd3f84","keyword":"位置分辨","originalKeyword":"位置分辨"}],"language":"zh","publisherId":"yzhwlpl201101010","title":"MICROMEGAS探测器初步测试","volume":"28","year":"2011"},{"abstractinfo":"介绍了探测器级 NTD 硅单晶的制作工艺,并对如何保证探测器级 NTD 硅单晶的质量进行了讨论。","authors":[{"authorName":"李强","id":"e50b51b4-711c-41f8-a521-555e94021f94","originalAuthorName":"李强"}],"doi":"10.3969/j.issn.0258-7076.2001.03.020","fpage":"238","id":"636307e6-a7f9-40e7-bfcf-fc4d1bb2da54","issue":"3","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"df9f44ea-d45d-4cc2-a109-554917c3a1bd","keyword":"探测器级","originalKeyword":"探测器级"},{"id":"a8ffd2bb-e3ac-498b-a481-4aa91ad343d3","keyword":"NTD","originalKeyword":"NTD"},{"id":"3430471d-8a70-44e9-8156-8c39567cb306","keyword":"硅单晶","originalKeyword":"硅单晶"}],"language":"zh","publisherId":"xyjs200103020","title":"探测器级NTD硅单晶的研制","volume":"25","year":"2001"},{"abstractinfo":"CVD金刚石紫外探测器有极强的辐射硬度及耐腐蚀性,在宽禁带半导体紫外探测器中占有重要地位.本文主要对金刚石紫外探测器的发展进展、探测机理、电极模式及应用领域做了简要回顾.","authors":[{"authorName":"楼燕燕","id":"cb7d5df5-646e-430f-8289-65cb263efc92","originalAuthorName":"楼燕燕"},{"authorName":"王林军","id":"cf86526d-e619-46f3-bc17-618d0d69e4e6","originalAuthorName":"王林军"},{"authorName":"张明龙","id":"3f11c4d9-5c49-4ae5-b3ab-e1458e1b7d29","originalAuthorName":"张明龙"},{"authorName":"顾蓓蓓","id":"8bc67319-5136-433b-962d-538dfdba5bd7","originalAuthorName":"顾蓓蓓"},{"authorName":"苏青峰","id":"9a4b8deb-60cf-404b-b190-684ea2283587","originalAuthorName":"苏青峰"},{"authorName":"夏义本","id":"adc73da5-0ec4-4343-ba69-a1a6e23c5a9b","originalAuthorName":"夏义本"}],"doi":"","fpage":"442","id":"8346bc35-ca7f-47cd-ac56-ea887279e563","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"dce89c43-f281-4ccb-8117-c71bf00c2536","keyword":"紫外探测器","originalKeyword":"紫外探测器"},{"id":"61ed05b1-32e2-4e65-95e8-228831965674","keyword":"金刚石膜","originalKeyword":"金刚石膜"},{"id":"8188da86-a0b8-4b3a-abc2-af18c97292a6","keyword":"辐射硬度","originalKeyword":"辐射硬度"}],"language":"zh","publisherId":"gncl2004z1113","title":"CVD金刚石紫外探测器","volume":"35","year":"2004"}],"totalpage":1810,"totalrecord":18098}