{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"对多晶体金属材料的晶界结构进行设计,能够显著提高这类材料的力学、化学及磁学性能.因此,晶界设计已成为金属材料改性的一项重要技术.对晶界设计的基本理论进行了介绍,在此基础上综述了近年来这项技术的应用研究概况,并提出了未来的进一步研究方向.","authors":[{"authorName":"吴杰","id":"4b0d3ef8-6172-4295-9989-0eb636d36647","originalAuthorName":"吴杰"},{"authorName":"陈善华","id":"99d34d3d-ee38-4a73-be8a-cf1ebff3c656","originalAuthorName":"陈善华"},{"authorName":"卢伢","id":"0b2e1eb8-814e-4b4e-a034-c94e56350fc4","originalAuthorName":"卢伢"},{"authorName":"管登高","id":"af44923f-50ea-4eb1-bec8-8d2402aafa72","originalAuthorName":"管登高"},{"authorName":"邹丛沛","id":"07c06771-d8f9-476b-8d89-b49c69326bde","originalAuthorName":"邹丛沛"},{"authorName":"邱绍宇","id":"0a0f237a-fe97-4ca9-ba5f-20812c115158","originalAuthorName":"邱绍宇"}],"doi":"","fpage":"89","id":"da254330-cea7-42b9-ab4a-6f78adf09d34","issue":"6","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"b1f59927-2c0b-4d94-81d3-b75b8cbcfd82","keyword":"晶界设计","originalKeyword":"晶界设计"},{"id":"2ec9b058-fa50-4e40-aaa3-17aba59688e8","keyword":"重合位置点阵","originalKeyword":"重合位置点阵"},{"id":"6babaf0c-e8e9-4242-9a0e-2352594274b9","keyword":"形变热处理工","originalKeyword":"形变热处理工"}],"language":"zh","publisherId":"cldb200606024","title":"晶界设计在多晶体金属材料中的应用","volume":"20","year":"2006"},{"abstractinfo":"综述了晶界理论的发展概况,包括CSL 点阵,O-点阵和DSC 点阵等晶界模型的物理概念。对晶界研究的若干实验技术及其应用发展进行了简明介绍和评述。对晶界问题的当前研究动向进行了初步归纳。","authors":[{"authorName":"周自强","id":"84cd1184-ae97-46de-8b34-c69a9486ca9b","originalAuthorName":"周自强"}],"categoryName":"|","doi":"","fpage":"1","id":"8237e981-314d-45a9-bdbc-0fe5649b3dc8","issue":"1","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"226242a9-0d41-4785-b471-addb91f4a612","keyword":"晶界结构","originalKeyword":"晶界结构"},{"id":"18692191-a711-49c7-ae59-94b9b3de844f","keyword":"bicrystal","originalKeyword":"bicrystal"},{"id":"86d22a6b-8183-4610-9dcd-7877d9cf42a9","keyword":"structure unit","originalKeyword":"structure unit"}],"language":"zh","publisherId":"1005-3093_1989_1_3","title":"晶界研究的现状和发展","volume":"3","year":"1989"},{"abstractinfo":"利用电子显微镜研究了形变热加工处理对晶界结构的影响.研究表明,敏化处理后,因预应变处理而引入孪晶的晶界工程(GBE)可以在大角度晶界得到高比例的非连续分布的低能晶界.在大角度晶界上形成的局部的低能晶界的贫铬程度明显低于原来的大角度晶界的贫铬程度.非连续分布的低能晶界阻断了大角度晶界贫铬的连续性,有效抑制来自于材料表面的沿晶腐蚀.","authors":[{"authorName":"毕洪运","id":"e87cc8c6-883a-4fe8-88ca-0f8a464730b0","originalAuthorName":"毕洪运"}],"doi":"","fpage":"68","id":"43c7492c-b5c9-4017-93bf-b3dcb29d17c5","issue":"6","journal":{"abbrevTitle":"GT","coverImgSrc":"journal/img/cover/GT.jpg","id":"27","issnPpub":"0449-749X","publisherId":"GT","title":"钢铁"},"keywords":[{"id":"80c92900-131f-40af-b462-0b34196baa59","keyword":"304不锈钢","originalKeyword":"304不锈钢"},{"id":"e685031a-26bf-4072-bf13-a0006f0733c4","keyword":"晶界工程","originalKeyword":"晶界工程"},{"id":"5111b469-3459-4446-8822-3e2576cbceb8","keyword":"贫铬","originalKeyword":"贫铬"},{"id":"46492171-c541-44a4-83c8-b15f1a58d475","keyword":"敏化腐蚀","originalKeyword":"敏化腐蚀"}],"language":"zh","publisherId":"gt200506019","title":"晶界工程抑制SUS304不锈钢晶界贫铬机制","volume":"40","year":"2005"},{"abstractinfo":"晶界预熔是指多晶材料的晶界在低于块体熔点温度时,就已经出现熔化的行为.这种行为会影响晶界的滑移阻力、晶界扩散、Coble蠕变速率等,改变多晶材料的宏观性能,显著降低材料的高温抗剪能力甚至会诱发热裂纹使材料发生灾难性失效行为.综述了研究晶界预熔的晶体相场方法的模型及结果分析;概括了国内外关于晶界预熔的研究,包括实验方法及其他模拟方法,如分子动力学方法、蒙特-卡洛方法、相场法等;指出了晶体相场方法相对于其他模拟方法的优势以及晶体相场方法研究晶界预熔的未来发展趋势.","authors":[{"authorName":"胡婷婷","id":"7b4aa48d-2ee8-485f-b393-23dc59980e65","originalAuthorName":"胡婷婷"},{"authorName":"卢艳丽","id":"33a27fdb-813c-4528-88e5-9ede3b0790a8","originalAuthorName":"卢艳丽"},{"authorName":"贾德伟","id":"4c6ff85b-b7ec-44fc-b4fb-3eb7ed1cefa3","originalAuthorName":"贾德伟"},{"authorName":"张刘超","id":"81615b17-b1df-444f-8cd4-ba0b91b75a45","originalAuthorName":"张刘超"},{"authorName":"陈铮","id":"3af2fa7e-f5b7-4f2a-afcd-2c8afcd518c1","originalAuthorName":"陈铮"}],"doi":"","fpage":"122","id":"9388af55-d454-4e18-ad93-464d9f6699d0","issue":"5","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"99f486de-2b5e-48b0-a902-538a78776a3c","keyword":"晶界预熔","originalKeyword":"晶界预熔"},{"id":"48f96a98-b676-467b-a23c-c45f1e8bdba6","keyword":"实验","originalKeyword":"实验"},{"id":"d094663d-6c7a-4c4e-97ba-5d65b8a13c50","keyword":"模拟","originalKeyword":"模拟"},{"id":"231fe600-2acd-4daf-a291-601c46a68612","keyword":"晶体相场模型","originalKeyword":"晶体相场模型"}],"language":"zh","publisherId":"cldb201405024","title":"晶界预熔的研究现状","volume":"28","year":"2014"},{"abstractinfo":"本文研究了掺杂CaO-Y2O3热压烧结和常压烧结AlN陶瓷的晶界相及其产生过程和除氧机制;分析了两种烧结工艺烧制的AlN陶瓷的晶界成份;测定了不同晶界相含量和晶界成份对应的AlN陶瓷的热导率.","authors":[{"authorName":"黄小丽","id":"00e5380b-b911-4c98-9353-248150b3451e","originalAuthorName":"黄小丽"},{"authorName":"马庆智","id":"ac1d80b9-9c6d-42a0-a74e-e7ce6a124f7c","originalAuthorName":"马庆智"},{"authorName":"郑永红","id":"9fa2ff2a-9940-40b9-869d-b025c960325a","originalAuthorName":"郑永红"},{"authorName":"李发","id":"e094b2ad-780d-4fb8-b492-f063ba2fe180","originalAuthorName":"李发"},{"authorName":"刘慧卿","id":"bfeaa9c3-0a2c-41ca-a19d-a4e3d19921fa","originalAuthorName":"刘慧卿"}],"doi":"10.3969/j.issn.1673-2812.2002.02.025","fpage":"238","id":"c3733536-bbd8-4754-b234-972a1ef92812","issue":"2","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"5672a3f8-d248-4994-8fe1-e4185117c247","keyword":"AlN","originalKeyword":"AlN"},{"id":"66ff85ac-3ec6-4ed4-8538-1693f1b16205","keyword":"热导率","originalKeyword":"热导率"},{"id":"d1a75718-f285-448e-aad3-b8a63c9d3584","keyword":"晶界相","originalKeyword":"晶界相"},{"id":"b6b83f81-612d-44fc-96a8-bb839a7db004","keyword":"晶界","originalKeyword":"晶界"}],"language":"zh","publisherId":"clkxygc200202025","title":"晶界相和晶界对AlN陶瓷热导率的影响","volume":"20","year":"2002"},{"abstractinfo":"用扫描电镜(SEM)研究了一种垂直晶界和两种倾斜晶界Cu双晶的疲劳开裂行为及其机制.这三种双晶组元晶体的取向均为[134].结果表明,沿晶界的疲劳开裂是Cu双晶疲劳破坏的主要形式,但垂直晶界和倾斜晶界双晶疲劳裂纹萌生的机制有所不同.垂直晶界双晶沿晶疲劳裂纹主要由驻留滑移带撞击晶界而产生,而倾斜晶界双晶疲劳裂纹的萌生是由晶界两侧晶粒的滑移台阶而引起的应力集中所致.造成这种差别的原因同两种双晶的活动滑移系与晶界的相对几何关系有关","authors":[{"authorName":"胡运明","id":"5ea2328f-dc42-42be-b03b-86ce8aeab251","originalAuthorName":"胡运明"},{"authorName":"王中光","id":"b88695b4-e00c-4168-a4c9-847e2627cdfd","originalAuthorName":"王中光"}],"categoryName":"|","doi":"","fpage":"1255","id":"43b99a1f-3ff7-4cea-9da8-e3a507620033","issue":"12","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"8d8759f3-a22a-4dfe-ae60-744e35008e53","keyword":"Cu双晶","originalKeyword":"Cu双晶"},{"id":"3438d086-9af6-496a-87e2-935b120c4e5d","keyword":" grain boundary","originalKeyword":" grain boundary"},{"id":"c9138b66-214e-4427-90c7-43dd997d59a8","keyword":" fatigue cracking","originalKeyword":" fatigue cracking"}],"language":"zh","publisherId":"0412-1961_1998_12_4","title":"垂直晶界和倾斜晶界Cu双晶的疲劳开裂行为及其机制","volume":"34","year":"1998"},{"abstractinfo":"对含有退火孪晶的多晶铜进行了不同塑性应变幅下的应变疲劳实验,利用扫描电镜及其电子通道衬度技术(SEM-ECC)观察了表面滑移形貌、疲劳裂纹和位错组态,研究了驻留滑移带与晶界和孪晶界的交互作用.结果表明,在晶界附近和远离晶界处观察到位错组态分布的不均匀现象.这种不均匀性导致多晶铜中疲劳裂纹首先沿着普通大角晶界开裂,在孪晶界处由于应变相容性较好而难以产生疲劳裂纹.","authors":[{"authorName":"段启强","id":"42979a8d-d461-4d89-be0b-d41b21871fae","originalAuthorName":"段启强"},{"authorName":"张辉","id":"6c205d69-45d0-47a3-987c-1e8365da3c14","originalAuthorName":"张辉"},{"authorName":"莫春立","id":"de5b6a38-ee96-4cc7-9cc9-ea29ba4208b1","originalAuthorName":"莫春立"},{"authorName":"张哲峰","id":"c4ad8f8f-81af-4778-be4a-10852f52337f","originalAuthorName":"张哲峰"}],"doi":"10.3321/j.issn:1005-3093.2006.05.001","fpage":"449","id":"069a81de-fcc9-4111-96c5-72d96ecb6f99","issue":"5","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"2646e97d-b045-4c85-8305-47437850af3e","keyword":"材料科学基础学科","originalKeyword":"材料科学基础学科"},{"id":"f54e4f01-3b63-4b0a-bf49-a11253b2f3c9","keyword":"应变疲劳","originalKeyword":"应变疲劳"},{"id":"058390ca-c352-4b8b-9418-ea78d52813ac","keyword":"驻留滑移带","originalKeyword":"驻留滑移带"},{"id":"63ffeb43-c5fa-47e8-9b07-cd3dc118242f","keyword":"晶界","originalKeyword":"晶界"},{"id":"d65bbcef-cbcd-47c5-bdf0-d51b03a74663","keyword":"疲劳裂纹","originalKeyword":"疲劳裂纹"}],"language":"zh","publisherId":"clyjxb200605001","title":"驻留滑移带与晶界和孪晶界的交互作用","volume":"20","year":"2006"},{"abstractinfo":"采用电子背散射衍射等技术研究了工业黄铜H68的晶界工程(GBE)处理及晶界特征分布(GBCD)。结果表明:工业黄铜H68经固溶和预处理,再进行6%冷轧并在923 K退火10 min后,其特殊晶界比例达到76%,一般大角晶界包围的∑3n(n=1,2,3)特殊晶粒团尺寸大于300μm,较好地阻断了一般大角晶界网络的连通性,实现了GBCD优化;预处理中非共格∑3晶界的形成及再结晶引起的晶粒细化,为后续冷轧退火中诱发∑3n(n=1,2,3)晶界迁移反应提供了条件,这是H68黄铜发生GBCD优化的主要机制。","authors":[{"authorName":"姜英","id":"71243547-a28e-4fb3-bb70-06a890c838df","originalAuthorName":"姜英"},{"authorName":"胡柳","id":"563a9061-479c-4624-a1a3-d43ea310549c","originalAuthorName":"胡柳"},{"authorName":"郭红","id":"8198cb21-601b-41e0-a5dd-0c81958033fe","originalAuthorName":"郭红"}],"doi":"","fpage":"4","id":"032a67c5-d0db-4e6e-b6d9-c61174cfa767","issue":"5","journal":{"abbrevTitle":"JXGCCL","coverImgSrc":"journal/img/cover/JXGCCL.jpg","id":"45","issnPpub":"1000-3738","publisherId":"JXGCCL","title":"机械工程材料"},"keywords":[{"id":"1abd757f-c565-41e4-9079-2ccb1cc81907","keyword":"H68黄铜","originalKeyword":"H68黄铜"},{"id":"91a93083-11d9-4e49-a366-7093e0abec18","keyword":"晶界工程处理","originalKeyword":"晶界工程处理"},{"id":"55697d57-ff0a-478d-985f-578bfb448a2d","keyword":"晶界特征分布","originalKeyword":"晶界特征分布"}],"language":"zh","publisherId":"jxgccl201105002","title":"工业黄铜H68的晶界工程处理及晶界特征分布","volume":"35","year":"2011"},{"abstractinfo":"本文研究了两种晶粒组织的二元Al-Li 合金拉伸性能与断裂行为。结果表明Al-Li 合金力学性能与晶粒尺寸有关,其断裂行为决定于PFZ 内平面滑移或晶界沉淀相与滑移的交互作用。","authors":[{"authorName":"姚大平","id":"ac7cbb9e-5a56-4ac7-8ed4-a5cf061c0d45","originalAuthorName":"姚大平"},{"authorName":"张匀","id":"78583dd0-e885-4e07-8f82-b541d179ac40","originalAuthorName":"张匀"},{"authorName":"胡壮麒","id":"65180395-f4e0-489e-aac8-f267a5e4b1d3","originalAuthorName":"胡壮麒"},{"authorName":"李依依","id":"c3c4d362-8a33-4db2-876d-0b06dc403042","originalAuthorName":"李依依"}],"categoryName":"|","doi":"","fpage":"143","id":"ebcb6677-f856-46e0-be11-f17c2cdc8a29","issue":"2","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"e6f32e89-3d36-46f5-970c-bb1058c25948","keyword":"Al—Li合金","originalKeyword":"Al—Li合金"},{"id":"075ab37d-123b-40e5-a33d-815e87897a3e","keyword":"intergranular fracture","originalKeyword":"intergranular fracture"},{"id":"d9620e52-d6bc-4b4c-9c6e-720646e1bfac","keyword":"planar slip","originalKeyword":"planar slip"}],"language":"zh","publisherId":"1005-3093_1991_2_12","title":"Al—Li合金的晶界断裂","volume":"5","year":"1991"},{"abstractinfo":"利用电子背散射衍射(EBSD)和取向成像(OIM)技术研究了形变量及退火时间对H68黄铜晶界网络的影响.结果显示,形变量对处理后样品的晶界特征分布及晶粒尺寸和晶粒团簇尺寸都有显著影响,而退火时间(10 min~3 h)所产生的影响不明显;其中经5%冷轧及在550℃下退火不同时间都能够显著提高H68黄铜的低∑CSL晶界比例到80%以上,晶界网络中形成了大尺寸的互有∑3n(n=1,2,3……)取向关系晶粒的团簇.","authors":[{"authorName":"杨辉辉","id":"404977cd-e3e8-47fb-974a-0b931094acf0","originalAuthorName":"杨辉辉"},{"authorName":"刘廷光","id":"399f13d6-0860-423c-acac-21a774e82f1f","originalAuthorName":"刘廷光"},{"authorName":"夏爽","id":"b59355e5-bf22-405a-8ff5-f23a98215e19","originalAuthorName":"夏爽"},{"authorName":"李慧","id":"02526204-bdee-4700-b3a5-7737a2bdeede","originalAuthorName":"李慧"},{"authorName":"周邦新","id":"a5dc9f54-a5b3-4cd3-8728-d59e041042f2","originalAuthorName":"周邦新"},{"authorName":"白琴","id":"1e83dd8b-f9ee-44dd-91d3-2002e8a51c19","originalAuthorName":"白琴"}],"doi":"","fpage":"9","id":"1d2fa9dc-f246-4e8d-bb02-c03356ab56e2","issue":"5","journal":{"abbrevTitle":"SHJS","coverImgSrc":"journal/img/cover/SHJS.jpg","id":"59","issnPpub":"1001-7208","publisherId":"SHJS","title":"上海金属"},"keywords":[{"id":"4ceed96e-7244-4c88-a22d-00477641f33d","keyword":"H68黄铜","originalKeyword":"H68黄铜"},{"id":"ff33c66c-0227-4ba2-b3f8-8764562c4403","keyword":"晶界工程","originalKeyword":"晶界工程"},{"id":"63d2a475-4335-4ca6-8880-9b3b9b584cd5","keyword":"晶粒团簇","originalKeyword":"晶粒团簇"},{"id":"75215901-00f8-4c3b-8ff3-89b1a873edda","keyword":"晶界网络","originalKeyword":"晶界网络"},{"id":"efd57859-83c4-47ad-b560-3812455e761a","keyword":"低∑CSL晶界比例","originalKeyword":"低∑CSL晶界比例"}],"language":"zh","publisherId":"shjs201305003","title":"利用晶界工程技术优化H68黄铜中的晶界网络","volume":"35","year":"2013"}],"totalpage":3805,"totalrecord":38050}