{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":2,"startPagecode":1},"records":[{"abstractinfo":"采用金属有机分解法(MOD)在p型Si(111)衬底上制备了K0.5Bi0.5TiO3(KBT)薄膜.用X射线衍射技术研究了薄膜的结构和结晶性.同时还研究了薄膜的绝缘性和存储性能.结果发现在740°C下退火4min的KBT薄膜呈钙钛矿结构;在0~8V范围内,薄膜的漏电流小于1.5×10-9A;在-12~+8V的偏压范围内,C-V记忆窗口宽度为10V.","authors":[{"authorName":"杨长红","id":"198be5b7-c7db-4c4a-829e-030126e8a53c","originalAuthorName":"杨长红"},{"authorName":"王卓","id":"508be38f-e196-485d-b6d3-7286942d934c","originalAuthorName":"王卓"},{"authorName":"韩建儒","id":"13b028f2-38e9-40fc-a189-26d13cc7f3b4","originalAuthorName":"韩建儒"}],"doi":"10.3969/j.issn.1000-985X.2004.05.015","fpage":"762","id":"293d702d-1568-4c9d-a02c-2efc5daad6de","issue":"5","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"8a8ce441-64f1-45df-b6cc-33eeb2b5fa6b","keyword":"金属有机分解法","originalKeyword":"金属有机分解法"},{"id":"7fd422ab-61a7-4226-b08d-29eea995d8a8","keyword":"KBT","originalKeyword":"KBT"},{"id":"87543413-7f61-4315-afc4-d97f9d1730db","keyword":"铁电薄膜","originalKeyword":"铁电薄膜"}],"language":"zh","publisherId":"rgjtxb98200405015","title":"金属有机分解法制备无铅K0.5Bi0.5TiO3铁电薄膜","volume":"33","year":"2004"},{"abstractinfo":"以TiCl4、Bi(NO3)3和K2CO3为原料采用柠檬酸盐溶胶-凝胶法低温烧结制备了纳米钛酸铋钾(KBT)粉体.利用DSC-TG、XRD、SEM、TEM分别对KBT粉体的形成过程、物相结构及晶粒尺寸进行表征.研究并讨论了TiCl4浓度、煅烧温度、柠檬酸盐量等对KBT粉体结构的影响.结果表明,TiCl4浓度为1.5 mol/L时,700℃煅烧2h合成了单相的片状K05Bi05TiO3纳米粉体,粉体颗粒边长大约在100 ~ 300 nm,厚度为20 ~ 50 nm;与固相法相比,烧结温度降低了300℃;与未添加柠檬酸盐的KBT相比,柠檬酸盐改性后的KBT粒子具有良好的分散性,且能有效抑制晶粒长大.","authors":[{"authorName":"田雪粉","id":"10ab2875-7128-4b67-8442-86ac13609f97","originalAuthorName":"田雪粉"},{"authorName":"王静","id":"6adbf0dd-6c5f-41ca-bfe9-ac3edeb4224b","originalAuthorName":"王静"},{"authorName":"尹成","id":"75834922-5711-47f2-b072-7d77dd4cf8f2","originalAuthorName":"尹成"},{"authorName":"孟祥才","id":"3495b6ca-bb48-40ee-bfc1-3f1098586761","originalAuthorName":"孟祥才"}],"doi":"","fpage":"1","id":"16dc30a4-f946-4a51-a451-768564508188","issue":"z2","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"0c4c96f0-597f-4d7d-aea6-e6a356b63d55","keyword":"纳米KBT粉体","originalKeyword":"纳米KBT粉体"},{"id":"d4cdc3db-6a6b-445d-81df-32936426e9f7","keyword":"柠檬酸盐溶胶-凝胶法","originalKeyword":"柠檬酸盐溶胶-凝胶法"},{"id":"b7bac661-a181-470c-927e-acd0c5b2fc0c","keyword":"低温制备","originalKeyword":"低温制备"},{"id":"1b09a40d-3e08-47f1-948f-5a32ebca8a41","keyword":"结构形貌","originalKeyword":"结构形貌"}],"language":"zh","publisherId":"jsrclxb2014z2001","title":"柠檬酸盐溶胶凝胶法低温合成KBT粉体","volume":"35","year":"2014"},{"abstractinfo":"采用固相法,利用XRD、SEM等测试分析方法,系统研究了CeO2掺杂对0.85(Na0.5Bi0.5)TiO3-0.144(K0.5Bi0.5)TiO3-0.006BaTiO3(NBT-KBT-BT)无铅压电陶瓷结构和性能的影响.研究结果表明:所有组成的陶瓷的物相均为单一钙钛矿型结构相,CeO2的掺杂只改变晶胞体积或产生铋离子空位或钠离子空位,不形成异相.CeO2掺杂使晶粒尺寸趋于平均,形状由四方状向粒状转变,对晶粒生长有抑制作用.随着CeO2掺杂量增加,压电陶瓷的压电应变常数d33先增大然后降低、介电常数ε先增大然后降低,介质损耗tanδ一直降低.当CeO2的掺杂量为0.1 %质量分数时,NBT-KBT-BT 无铅压电陶瓷的综合性能最佳,其性能为:d33=156 pC/N、tan δ=3.8%、ε=1364.","authors":[{"authorName":"黄新友","id":"14f7cfff-0852-487b-ac72-8cadb493f453","originalAuthorName":"黄新友"},{"authorName":"魏敏先","id":"d98073d1-2cf5-4ba3-b40e-0932c0e4e90e","originalAuthorName":"魏敏先"},{"authorName":"陈志刚","id":"96a00b9b-2002-4b85-aa10-ed2349d92683","originalAuthorName":"陈志刚"},{"authorName":"高春华","id":"ce985b18-df70-4034-83df-49a20c66337b","originalAuthorName":"高春华"},{"authorName":"崔永臻","id":"e426c819-99de-41af-8b75-49b3e1cd313b","originalAuthorName":"崔永臻"}],"doi":"","fpage":"1489","id":"eb96518a-47af-4c7b-a01e-7cf8146d10ff","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"2e02c1dd-f16a-48f8-9cf1-1eac002adfc4","keyword":"无铅压电陶瓷","originalKeyword":"无铅压电陶瓷"},{"id":"436fa0cf-835e-411b-b561-822d0d1d47f3","keyword":"掺杂","originalKeyword":"掺杂"},{"id":"12883363-5135-4863-b129-5746f32a666a","keyword":"性能","originalKeyword":"性能"},{"id":"c0524aaf-4b11-413b-b0ca-82430a4ba4b5","keyword":"CeO2","originalKeyword":"CeO2"}],"language":"zh","publisherId":"rgjtxb98200806037","title":"CeO2掺杂对NBT-KBT-BT无铅压电陶瓷性能的影响","volume":"37","year":"2008"},{"abstractinfo":"采用金属有机物分解法制备了不同K含量的弛豫型压电薄膜(1-x)Na0.5Bi0.5TiO3-xK0.5Bi0.5TiO3(NBT-KBT100x).利用压电力显微镜研究了外场条件下纳米级铁电畴翻转,以及保持性能和印记失效.结果表明:(1)不同组分中,NBT-KBT17薄膜单畴态的晶粒个数最多.选取NBT-KBT17薄膜分别测试了其面内极化分量和面外极化分量,该薄膜的面内压电信号较强,这说明薄膜在d31模式下的压电响应明显.(2)选择NBT-KBT17薄膜中较大尺寸的单晶,实现了对弛豫性铁电体的电畴写入.将其在大气环境下放置不同时间,出现了退极化现象,但总的畴态稳定,表明其保持性能较好.(3)制备了NBT-KBT17原理型薄膜电容器,分别测试了加载作用前后NBT-KBT17薄膜电容器的相位和振幅滞后回线图.结果表明外加作用力使相位回线向右发生了一定的移动,且振幅的蝶形曲线均在不同方向上发生了偏移,同时形状也发生了改变.最后,利用空间电荷原理分析了外加力导致薄膜印记产生的机理.","authors":[{"authorName":"朱哲","id":"b27f9e1f-3970-4077-8128-050c495c3783","originalAuthorName":"朱哲"},{"authorName":"郑学军","id":"5538e134-fb78-4137-879e-c66874f50dad","originalAuthorName":"郑学军"},{"authorName":"张丹书","id":"0e4ac9b3-50fe-4e28-8054-31e5d3de993f","originalAuthorName":"张丹书"}],"doi":"10.3724/SP.J.1077.2013.12492","fpage":"707","id":"ffe8f0c5-daec-476a-9f02-f0c199f125e3","issue":"7","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"b94ec1a5-d003-496c-9770-9d5b24e0560f","keyword":"压电力显微镜","originalKeyword":"压电力显微镜"},{"id":"0e2d0208-8fc9-4c1f-a361-72394689eb2a","keyword":"畴翻转","originalKeyword":"畴翻转"},{"id":"d14b5a01-a62f-4442-81b9-701c8488c4b6","keyword":"保持性","originalKeyword":"保持性"},{"id":"fcc51f13-e5e5-4510-a30f-ddd94d1552a5","keyword":"印记","originalKeyword":"印记"}],"language":"zh","publisherId":"wjclxb201307005","title":"外场下NBT-KBT100x压电薄膜畴变演化、保持特性及印记的研究","volume":"28","year":"2013"},{"abstractinfo":"采用传统电子陶瓷工艺制备了(1-x)(0.88Na0.5Bi0.5TiO3-0.12K0.5Bi0.5TiO3)-xLiNbO3(简写为NBT-KBT-xLN)无铅压电陶瓷体系,研究了该陶瓷体系的相结构、显微结构、铁电及介电性能.结果表明:在材料组成范围内(0.02≤x≤0.08),系列试样均形成了稳定的三方相钙钛矿结构;随着LiNbO3含量的增加,系列试样的矫顽场从4.41 kV/mm显著下降至1.51 kV/mm;LiNbO3的引入对材料的介电性能作用明显,随着LiNbO3含量的增加,系列试样的铁电-反铁电相变峰明显向低温方向移动,而反铁电-顺电相变峰则表现为明显的压峰效应.","authors":[{"authorName":"刘丽娟","id":"d7018fdd-709a-4b13-ab46-b3c5f8202e86","originalAuthorName":"刘丽娟"},{"authorName":"杜慧玲","id":"2f858db9-0c18-4b64-9f7f-862a00e67eac","originalAuthorName":"杜慧玲"},{"authorName":"张晰","id":"9fbbc44a-80e3-43ec-bd9d-aa527be8bb6d","originalAuthorName":"张晰"},{"authorName":"崔玉","id":"ef327229-1962-4f4e-bd67-9c304b97184d","originalAuthorName":"崔玉"}],"doi":"","fpage":"708","id":"62443605-0ec4-4e90-8227-bab1e2a86f09","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"f93e6ac8-3acf-4422-b397-9d7a8ea0cf46","keyword":"钛酸铋钠","originalKeyword":"钛酸铋钠"},{"id":"5a772b33-cdbd-450b-8dab-26af19b4e2b6","keyword":"介电弛豫","originalKeyword":"介电弛豫"},{"id":"30a44faf-5622-43ca-903a-e37203909b55","keyword":"矫顽电场","originalKeyword":"矫顽电场"}],"language":"zh","publisherId":"rgjtxb98201003030","title":"NBT-KBT-xLN系陶瓷的介电与铁电性能研究","volume":"39","year":"2010"},{"abstractinfo":"采用传统固相烧结法制备0.92(Na0.51K0.49-xLix)NbO3-0.02K0.5Bi0.5TiO3-0.06BaZrO3(简写为NKLNx-KBT-BZ,x=0.00~0.05)系无铅压电陶瓷.用X射线衍射仪、扫描电子显微镜、精密阻抗分析仪及铁电性能测试仪等研究了Li+含量对该体系陶瓷的晶相、显微结构和电性能的影响.结果表明:在研究组成范围内,陶瓷均具有单一的钙钛矿结构,随着Li+含量的增加,晶体结构从菱方转变为四方结构,并且经过菱方-四方两相共存的准同型相界(MPB)组成区域0.01 <x <0.03.在MPB区域的四方相边界x=0.03处获得优异的电性能:d33=227 pC/N,kp=39.3%,Qm=69,εT33/ε0=1642,tanδ =2%,Pr=13.3μC/cm2,Ec=1.64 kV/mm.","authors":[{"authorName":"吴芬","id":"7135b1b4-9b43-4a74-ac76-8623f7c2ae1f","originalAuthorName":"吴芬"},{"authorName":"李月明","id":"0d67f98e-a0ef-4abd-8b1a-c533e7c7d4dd","originalAuthorName":"李月明"},{"authorName":"沈宗洋","id":"3281e44e-7a90-4e2a-9aa3-df21e0cfd76a","originalAuthorName":"沈宗洋"},{"authorName":"王竹梅","id":"314e1eef-6d59-4d25-9357-1f13777cd9cb","originalAuthorName":"王竹梅"},{"authorName":"洪燕","id":"e7fbb9e3-6dfe-4c53-b568-7aeaf140f514","originalAuthorName":"洪燕"},{"authorName":"肖祖贵","id":"6f4f0818-e23e-4a1f-b40d-1957995ca2f4","originalAuthorName":"肖祖贵"}],"doi":"","fpage":"432","id":"83da1ecc-dfa6-4a84-afb1-a90c63755f0c","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"25e3a802-a9e0-4fa5-82c2-94dc475165e6","keyword":"铌酸钾钠","originalKeyword":"铌酸钾钠"},{"id":"70bf1cac-1819-4062-9bb5-88822d3efd68","keyword":"无铅压电陶瓷","originalKeyword":"无铅压电陶瓷"},{"id":"224545e7-9883-421f-b52e-676f118370ab","keyword":"压电性能","originalKeyword":"压电性能"},{"id":"17dd5576-75b3-4762-8d66-e773a8e11ee2","keyword":"准同型相界","originalKeyword":"准同型相界"}],"language":"zh","publisherId":"rgjtxb98201303011","title":"NKLNx-KBT-BZ无铅压电陶瓷的电性能研究","volume":"42","year":"2013"},{"abstractinfo":"","authors":[{"authorName":"","id":"4a4ef214-a886-497d-b05e-e307a01964ad","originalAuthorName":""},{"authorName":"","id":"a357b8f8-725c-402b-a014-362a1e1928f0","originalAuthorName":""},{"authorName":"","id":"4863d5d0-21d3-44ac-bb9d-062d8bb3c02d","originalAuthorName":""},{"authorName":"","id":"2cdde8a4-5bbe-4671-813a-b95cf2571fb1","originalAuthorName":""},{"authorName":"","id":"fa061780-09b8-4944-87c3-7d2cee5801c4","originalAuthorName":""}],"doi":"10.1007/s12598-011-0200-1","fpage":"72","id":"040f3260-82cd-4866-8d4d-7140b4d1798b","issue":"1","journal":{"abbrevTitle":"XYJSYWB","coverImgSrc":"journal/img/cover/XYJSEN.jpg","id":"68","issnPpub":"1001-0521","publisherId":"XYJSYWB","title":"稀有金属(英文版)"},"keywords":[{"id":"37ba6a80-17da-49dc-899f-b2be86be374d","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"xyjs-e201101015","title":"Influence of Sb2O3 doping on the properties of KBT-NBT-BT lead-free piezoelectric ceramics","volume":"30","year":"2011"},{"abstractinfo":"本文研究了具有四方结构的(Na1-xKx)0.5Bi0.5TiO3体系中x=0.22,0.26和0.30陶瓷材料不同温度下的电滞回线,结合变温XRD和介电温谱分析,发现该体系四方结构的组成为反铁电体,但紧靠准同型相界的四方结构由于场诱导下引起的反铁电-铁电相变,表现出铁电体特性,材料在升温过程中由于反铁电宏畴向微畴的转变导致了介电峰的产生,且在介电温谱上表现出强烈的介电常数-频率依赖性,为弛豫铁电体特征.","authors":[{"authorName":"李月明","id":"655b92b7-c45d-4423-b4c4-80652aa7ff05","originalAuthorName":"李月明"},{"authorName":"陈文","id":"148dc845-73c1-418d-bab8-b10c5af5828c","originalAuthorName":"陈文"},{"authorName":"徐庆","id":"4a471557-ca20-424a-9a8b-416cae960a9d","originalAuthorName":"徐庆"},{"authorName":"江向平","id":"d25c9a9b-4c40-414a-ab05-61396d04b61a","originalAuthorName":"江向平"},{"authorName":"张玉平","id":"b742cb72-aee4-4375-b7f3-6f2bc068b228","originalAuthorName":"张玉平"}],"doi":"10.3969/j.issn.1000-985X.2006.04.039","fpage":"849","id":"becc2e23-bed0-4259-a684-73358e10db1a","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"45576adb-f91e-42c8-8b68-7adcde75b586","keyword":"钛酸铋钠","originalKeyword":"钛酸铋钠"},{"id":"7b7f5c6d-17d9-48b9-af7c-f83f64032890","keyword":"钛酸铋钾","originalKeyword":"钛酸铋钾"},{"id":"d503c3d0-4b6b-4ab1-9d40-c37996f50910","keyword":"反铁电相变","originalKeyword":"反铁电相变"},{"id":"548a5fec-5a92-469b-9b51-ea1fc7fa14a8","keyword":"介电弛豫","originalKeyword":"介电弛豫"}],"language":"zh","publisherId":"rgjtxb98200604039","title":"四方相区NBT-KBT无铅铁电介电弛豫与铁电相变研究","volume":"35","year":"2006"},{"abstractinfo":"研究了K0.5Bi0.5TiO3(KBT)含量对Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3(BNKT)无铅压电陶瓷的显微组织结构及压电性能的影响规律,结果表明随KBT含量增加,BNKT无铅压电陶瓷的晶胞参数增大,密度减小,晶粒尺寸减小,居里温度从326℃升高到360℃,压电常数、介电常数和介电损耗增加,机械品质因数下降;KBT含量为0.15mol的(Na0.85K0.15)0.5Bi0.5TiO3无铅压电陶瓷位于准同型相界处,具有较佳的压电性能.","authors":[{"authorName":"高峰","id":"7e86d310-ac56-408c-9889-7cb0fe1049aa","originalAuthorName":"高峰"},{"authorName":"张昌松","id":"f4f1e028-2398-40bd-8cfa-c18364251c61","originalAuthorName":"张昌松"},{"authorName":"王卫民","id":"ada2002a-5258-45c3-9968-4fe049a727b2","originalAuthorName":"王卫民"},{"authorName":"赵鸣","id":"55976d5a-5181-4bcd-84b2-ee85c4861302","originalAuthorName":"赵鸣"},{"authorName":"田长生","id":"931a957c-f8d6-414b-bf56-d6e1b2e18559","originalAuthorName":"田长生"}],"doi":"10.3969/j.issn.1001-4381.2006.10.012","fpage":"43","id":"1a2aff4e-7fe5-4ed7-8f09-e83d95814024","issue":"10","journal":{"abbrevTitle":"CLGC","coverImgSrc":"journal/img/cover/CLGC.jpg","id":"9","issnPpub":"1001-4381","publisherId":"CLGC","title":"材料工程"},"keywords":[{"id":"1968e94a-0bd3-4445-8069-faec37fade9a","keyword":"无铅压电陶瓷","originalKeyword":"无铅压电陶瓷"},{"id":"66c6eec0-f24c-44e0-96c5-9f4eb52f5f2d","keyword":"压电性能","originalKeyword":"压电性能"}],"language":"zh","publisherId":"clgc200610012","title":"(Na,K)0.5Bi0.5TiO3无铅压电陶瓷的结构与性能研究","volume":"","year":"2006"},{"abstractinfo":"采用高温自助熔剂法制备了(Na0.5Bi0.5) TiO3-(K0.5Bi0.5) TiO3(简称:NBT-KBT)无铅铁电单晶,晶体尺寸为5mm×6 mm×1 mm.利用X射线衍射(XRD)手段研究了NBT-KBT单晶的相结构,结果表明晶体样品为钙钛矿四方相结构.Raman散射结果也表明了NBT-KBT单晶的拉曼振动模式具有四方相结构特征.利用扫描电镜(SEM)和透射电镜(TEM)研究了单晶的表面形貌和微结构特征.另外,单晶介电常数随温度以及频率的变化关系显示单晶具有弛豫铁电体特性.","authors":[{"authorName":"陈超","id":"c35a273b-a4d0-459f-b47e-99dce48ed797","originalAuthorName":"陈超"},{"authorName":"古训玖","id":"a659856a-a2ef-4783-b8ca-f79563dd4659","originalAuthorName":"古训玖"},{"authorName":"李小红","id":"3340a2ae-9dfb-4a7a-b3df-60bcec9118ff","originalAuthorName":"李小红"},{"authorName":"邹思怿","id":"e10e4af6-8318-4d56-a205-c435d2cf8a68","originalAuthorName":"邹思怿"},{"authorName":"江向平","id":"e3e76525-fc48-4fa5-bba9-f7049f53d621","originalAuthorName":"江向平"}],"doi":"","fpage":"333","id":"a731412b-6c10-4d67-9e3e-c8421f40299d","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"9a75da88-f503-4dc1-a05e-db3bb096a4ac","keyword":"无铅铁电晶体","originalKeyword":"无铅铁电晶体"},{"id":"66839328-0e43-4ba6-a76b-ae1d2433b941","keyword":"晶体生长","originalKeyword":"晶体生长"},{"id":"54538ac3-6003-4357-9918-5e662c455677","keyword":"NBT-KBT","originalKeyword":"NBT-KBT"},{"id":"5d48dfcc-0a40-44a6-a1e5-945dccc51c18","keyword":"介电特性","originalKeyword":"介电特性"}],"language":"zh","publisherId":"rgjtxb98201602007","title":"(Na0.5Bi0.5)TiO3-(K0.5Bi0.5)TiO3无铅铁电单晶的生长、结构与介电特性","volume":"45","year":"2016"}],"totalpage":2,"totalrecord":16}