{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"报道了后腔面蒸镀高反射率镀膜工艺及其对分布反馈量子级联激光器性能影响的研究结果.与没有腔面镀膜的器件相比,采用了腔面镀膜工艺的器件,室温下的阈值电流密度降低了20%,前腔面出光峰值功率提高了50%,斜率效率提高了44%.通过对比镀膜和未镀膜器件的闻值电流密度,估算出器件的波导损耗约为7.25cm-1.","authors":[{"authorName":"魏林","id":"9e26e383-ff64-45f2-a74f-2ce218dc4e9f","originalAuthorName":"魏林"},{"authorName":"李耀耀","id":"39e63cac-d4dc-45a6-ab79-e6752dc37cd3","originalAuthorName":"李耀耀"},{"authorName":"李爱珍","id":"5f514a24-1677-4d96-a14a-ea18d0e40c30","originalAuthorName":"李爱珍"},{"authorName":"刚毅","id":"e43f92b5-65ed-40eb-aecd-fd5efb20a69a","originalAuthorName":"徐刚毅"},{"authorName":"张永刚","id":"5e7f28af-2b95-4f98-8186-94cab1a02b6c","originalAuthorName":"张永刚"}],"doi":"10.3969/j.issn.1007-4252.2009.03.004","fpage":"233","id":"0663efac-9ee2-408f-832a-38689db4efec","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"0ce10187-6dd7-42ac-b82c-1d76210a55f4","keyword":"分布反馈量子级联激光器","originalKeyword":"分布反馈量子级联激光器"},{"id":"12b7f2ea-9d3a-4612-92db-9cc6fb55121b","keyword":"高反射率腔面镀膜","originalKeyword":"高反射率腔面镀膜"}],"language":"zh","publisherId":"gnclyqjxb200903004","title":"腔面镀膜分布反馈量子级联激光器","volume":"15","year":"2009"},{"abstractinfo":"高分辨率X射线衍射技术被用来分析基于InP衬底的应变的InGaAs和InAlAs单层材料和应变补偿的InGaAs/InAlAs超晶格材料.通过倒空间mapping得到的单层材料的错向角大约为10-3度,可以忽略不计.通过摇摆曲线得到了单层材料的组分和体失配度,接着单层材料的结果被用来分析在相同的条件下利用MBE技术生长的超晶格材料.利用倒空间mapping精确得到了超晶格的平均垂直失配度和各层的厚度,通过X射线模拟软件得到的超晶格材料的模拟曲线和实测曲线吻合的很好.","authors":[{"authorName":"梅斌","id":"b6c32182-b570-4b1b-a4c9-4bcddc322fcc","originalAuthorName":"梅斌"},{"authorName":"刚毅","id":"c56e5492-6377-4307-abac-400eeeb0884d","originalAuthorName":"徐刚毅"},{"authorName":"李爱珍","id":"9d210834-c5eb-40c3-92d5-a05bb74ce4f6","originalAuthorName":"李爱珍"},{"authorName":"李华","id":"4e86961b-dab5-477d-a29a-1ae6e955edbe","originalAuthorName":"李华"},{"authorName":"李耀耀","id":"21fd8a31-359b-42a6-ac8e-9172d9effec2","originalAuthorName":"李耀耀"},{"authorName":"魏林","id":"0bfc4c47-d09a-41c5-8b74-c233bfd31f96","originalAuthorName":"魏林"}],"doi":"10.3969/j.issn.1007-4252.2008.05.007","fpage":"889","id":"26c0b138-6c66-424d-8f01-5da34ce4e984","issue":"5","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"6a66c93f-d81d-43cb-a4b1-15f6c042f65c","keyword":"高分辨X射线衍射","originalKeyword":"高分辨X射线衍射"},{"id":"4edd3b76-4ab7-4737-8874-a87bfec6c7d6","keyword":"InGaAs","originalKeyword":"InGaAs"},{"id":"2f5c9eda-6562-4160-bab9-cdcf649ddc9b","keyword":"InAlAs","originalKeyword":"InAlAs"},{"id":"6a6b477b-6a3d-402b-bc22-3cd6222b402b","keyword":"错向角","originalKeyword":"错向角"},{"id":"0359b7cd-7cb7-4b91-8a72-37c5a91d2d00","keyword":"摇摆曲线","originalKeyword":"摇摆曲线"},{"id":"58836b83-5aa5-4651-80e4-1356fb69e955","keyword":"倒空间mapping","originalKeyword":"倒空间mapping"}],"language":"zh","publisherId":"gnclyqjxb200805007","title":"基于InP衬底的应变和应变补偿的InGaAs/InAlAs材料的高分辨X射线衍射分析","volume":"14","year":"2008"},{"abstractinfo":"报道了可在室温下脉冲工作的AlGaAsSb/InGaAsSb 2 μm 多量子阱脊波导半导体激光器.器件材料生长采用固态源分子束外延的方法,器件有源层采用应变补偿量子阱结构,激光器结构中引入了加宽波导的设计.制备的多量子阱激光器最高工作温度可达60 ℃,激射波长2.08 μm.室温下阈值电流为350 mA,20~50 ℃范围内特征温度为88 K.","authors":[{"authorName":"张雄","id":"ad009eb5-0813-4044-9c67-6f2656faa9d0","originalAuthorName":"张雄"},{"authorName":"李爱珍","id":"85173776-1b72-47f5-b137-4d902e46c11f","originalAuthorName":"李爱珍"},{"authorName":"张永刚","id":"0b0e6245-8efa-42ec-96d3-68fbb7d3426d","originalAuthorName":"张永刚"},{"authorName":"郑燕兰","id":"3048404f-410a-4f4f-8530-7b4db85b0694","originalAuthorName":"郑燕兰"},{"authorName":"刚毅","id":"0775363f-c577-4dfb-8c5a-32ec1215acc8","originalAuthorName":"徐刚毅"},{"authorName":"齐鸣","id":"7cc9e4a8-8ee3-4f24-b0c2-0a85c28d2e9d","originalAuthorName":"齐鸣"}],"doi":"10.3969/j.issn.0258-7076.2004.03.034","fpage":"574","id":"49ca30d8-00a1-46a5-b02e-2132211848c8","issue":"3","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"0b5977be-1590-421e-ab48-35790f9ba899","keyword":"半导体激光器","originalKeyword":"半导体激光器"},{"id":"2d50d077-6e20-46dd-b315-b92c1b30f88b","keyword":"分子束外延","originalKeyword":"分子束外延"}],"language":"zh","publisherId":"xyjs200403034","title":"室温工作的AlGaAsSb/InGaAsSb 2 μm多量子阱脊波导半导体激光器","volume":"28","year":"2004"},{"abstractinfo":"介绍了氢化纳米硅(nc-Si:H)薄膜在电子学器件和光电转换器件(如隧道二极管、异质结二极管、变容二极管、单电子晶体管、太阳能电池、发光二极管)等方面的研究进展,分析了这些器件的性能与nc-Si:H薄膜结构之间的关系,阐述了新型器件的优点.","authors":[{"authorName":"韦文生","id":"ec070f4b-7d80-4970-bea4-3ac714bf1c09","originalAuthorName":"韦文生"},{"authorName":"刚毅","id":"605b8b50-1145-49d1-b98b-e263777742af","originalAuthorName":"徐刚毅"},{"authorName":"王天民","id":"e28598b1-54c2-4235-a9d2-0c56c40a3c64","originalAuthorName":"王天民"},{"authorName":"张春熹","id":"83bcb3a4-7211-4682-b59c-b579e21ae560","originalAuthorName":"张春熹"}],"doi":"","fpage":"76","id":"9e50ad93-12b9-44b3-b2e6-b63da95a4d36","issue":"1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"bcc69266-0a5c-4492-93bf-6aac38c49992","keyword":"nc-Si:H薄膜","originalKeyword":"nc-Si:H薄膜"},{"id":"3cb1cab6-7aca-4509-9e8a-147f85a6db21","keyword":"隧道二极管","originalKeyword":"隧道二极管"},{"id":"dc000398-fd86-42d3-8988-74a21b43f30c","keyword":"异质结二极管","originalKeyword":"异质结二极管"},{"id":"909bb117-8360-42e5-a899-8bb6a4107ee1","keyword":"变容二极管","originalKeyword":"变容二极管"},{"id":"52791f24-78a9-435e-8f12-1a642a51f7db","keyword":"太阳能电池","originalKeyword":"太阳能电池"},{"id":"e7589d25-7929-4001-8ebe-dcb4cd464a27","keyword":"单电子晶体管","originalKeyword":"单电子晶体管"},{"id":"a6ad9b78-af73-4cfd-b765-77707894f3ea","keyword":"发光二极管","originalKeyword":"发光二极管"}],"language":"zh","publisherId":"cldb200401022","title":"Nc-Si:H薄膜器件的研究","volume":"18","year":"2004"},{"abstractinfo":"利用全息曝光方法制备了分布反馈量子级联激光器的光栅掩模,选择和发展了恰当的用于InGaAs/InP材料的光栅腐蚀优化工艺,得到腐蚀规律,讨论了腐蚀机制.在量子级联激光器的In-GaAs/InP层上制备光栅得到分布反馈量子级联激光器,其单模特性较好,信噪比大于30dB.","authors":[{"authorName":"李耀耀","id":"8553b1c1-70e8-497f-a091-e3e6f4924ddd","originalAuthorName":"李耀耀"},{"authorName":"刚毅","id":"45183489-0095-40d2-aed3-0417ddf60069","originalAuthorName":"徐刚毅"},{"authorName":"张永刚","id":"9cc50b1e-f217-4a46-b541-69cffb594cd7","originalAuthorName":"张永刚"},{"authorName":"李爱珍","id":"90df936b-233b-4e67-82ad-57e9f17c1dd0","originalAuthorName":"李爱珍"},{"authorName":"魏林","id":"10781913-9a28-417f-884e-e4e0a21de802","originalAuthorName":"魏林"}],"doi":"10.3969/j.issn.1007-4252.2009.05.010","fpage":"471","id":"e245dccb-0e5a-49a4-94ac-b2473a422956","issue":"5","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"2c35e07d-35ee-4e05-b3f2-10df7e5a0609","keyword":"分布反馈激光器","originalKeyword":"分布反馈激光器"},{"id":"2f7d07d1-4035-444f-9c54-607b9508cb9e","keyword":"全息曝光","originalKeyword":"全息曝光"},{"id":"83a482a3-3d27-426e-b774-d1464fde2acd","keyword":"光栅制备","originalKeyword":"光栅制备"}],"language":"zh","publisherId":"gnclyqjxb200905010","title":"分布反馈量子级联激光器的光栅制备","volume":"15","year":"2009"},{"abstractinfo":"利用高真空PECVD系统在p型单晶硅上沉积掺磷n型纳米硅薄层(nc-Si:H),形成纳米硅/单晶硅Np异质结二极管,通过C-V和J-V测试研究了二极管的电学性质。C-V特性指出该异质结为突变型。J-V特性表明二极管具有很好的温度稳定性和整流特性。正偏压时二极管存在两种输运机制:小偏压时(<0.8V)二极管电流由 耗尽层纳米硅薄层一侧的载流子复合过程决定,纳米硅薄层由于能带弯曲而减小了禁带宽度,这是该二极管温度稳定性好的根本原因;大偏压(>1.0V)时电输运符合电荷限制电流(SCLC)模型。负偏压时电流主要来自空间电荷区中的产生电流。","authors":[{"authorName":"刚毅","id":"58f1bf6a-05ed-4a4d-b9d1-3d32ff29284a","originalAuthorName":"徐刚毅"},{"authorName":"王天民","id":"722157c2-5ef3-4aeb-8771-5173cc0605d1","originalAuthorName":"王天民"},{"authorName":"王金良","id":"2bdf8a59-a90a-40f2-bb99-c43c1280e74c","originalAuthorName":"王金良"}],"doi":"10.3969/j.issn.1007-4252.2001.01.010","fpage":"45","id":"4077fde9-710f-4141-ab59-5fe47ee54a34","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"666ba322-6de4-4ec2-a5a5-1a73c2d50571","keyword":"纳米硅/单晶硅","originalKeyword":"纳米硅/单晶硅"},{"id":"c5a5f6e8-2bc7-4509-9a52-b8ae79826ccf","keyword":"Np异质结二极管","originalKeyword":"Np异质结二极管"},{"id":"6cb15ffe-474c-477e-9519-be02888eff8d","keyword":"输运机制","originalKeyword":"输运机制"}],"language":"zh","publisherId":"gnclyqjxb200101010","title":"纳米硅/单晶硅异质结二极管的电学特性","volume":"7","year":"2001"},{"abstractinfo":"单轴、双轴和三轴变试验结果表明,混凝土的变与弹性变形一样具有空间特性,但根据单轴变试验得到的变系数、变泊松比以及采用叠加原理计算的双轴、三轴应力状态下的空间变与实际情况存在较大偏差.为了准确计算不同应力状态下混凝土的空间变,介绍了应力组合对有效变泊松比的影响和基于有效变泊松比的空间变计算方法.另外,根据应力张量的弹性力学意义,引入了球应力变系数(ψ)m和偏应力变系数(ψ) d,提出了基于这两个变系数的空间变计算统一表达式,可计算混凝土在单轴、双轴和三轴等不同应力状态下的空间变.","authors":[{"authorName":"黄胜前","id":"f60fe1e8-6699-466b-8f2e-355e391d0c51","originalAuthorName":"黄胜前"},{"authorName":"杨永清","id":"0ad9d4be-4c12-4497-a380-8dee2c8f7ad4","originalAuthorName":"杨永清"},{"authorName":"李晓斌","id":"a5e2e801-c9b9-4f4b-886e-c62ae3c23491","originalAuthorName":"李晓斌"},{"authorName":"陈志伟","id":"db16b3f8-4c53-49d7-bdd3-f6cf5f2247c1","originalAuthorName":"陈志伟"}],"doi":"","fpage":"150","id":"77593762-6ffb-4cfa-913f-f64ffef2186c","issue":"2","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"69ea1570-d4c9-437e-bfef-97ae77a244a5","keyword":"混凝土","originalKeyword":"混凝土"},{"id":"9785e9c9-1fc1-4ea3-ab52-a37f97e3f32e","keyword":"单轴","originalKeyword":"单轴"},{"id":"4565bb1b-db4a-4cd3-8595-f4cc47900c42","keyword":"双轴","originalKeyword":"双轴"},{"id":"59877901-b9f9-4bd2-a23d-bca130502b51","keyword":"三轴","originalKeyword":"三轴"},{"id":"375cdb53-1ae1-4106-b024-cece1bb5b8eb","keyword":"应力状态","originalKeyword":"应力状态"},{"id":"2edbc816-e655-4662-9602-f0529134d608","keyword":"空间变","originalKeyword":"空间徐变"}],"language":"zh","publisherId":"cldb201302040","title":"不同应力状态下混凝土空间变的统一表达式","volume":"27","year":"2013"},{"abstractinfo":"为了研究不同配合比设计方法对再生混凝土长期变性能的影响,分别采用等体积砂浆法(EMV法)与传统替代法配制再生混凝土,测试各组再生混凝土试件28 d龄期后自然条件下持荷的变形值和相同试验条件下试件的收缩值,并计算各组试件的变度.研究结果表明:两种方法配制的再生混凝土的收缩变变化规律与对比普通混凝土相似.EMV法可有效改善再生混凝土的变性能,具有较低的变度.","authors":[{"authorName":"霍俊芳","id":"55188923-049c-49aa-994c-ac564398860f","originalAuthorName":"霍俊芳"},{"authorName":"李晨霞","id":"8fa10b03-f76b-44b4-97ee-bd67d36d407e","originalAuthorName":"李晨霞"},{"authorName":"侯永利","id":"83d612b7-ba2c-46d3-a2ff-d86f396b5f77","originalAuthorName":"侯永利"},{"authorName":"吕笑岩","id":"98dd9616-8bca-4990-9631-ef1c189dce52","originalAuthorName":"吕笑岩"}],"doi":"","fpage":"723","id":"dc2db04e-0a0c-4741-830f-d84f7a4e5aee","issue":"2","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报 "},"keywords":[{"id":"d2a7136a-24da-4dc5-b2c8-c753ce344b72","keyword":"再生混凝土","originalKeyword":"再生混凝土"},{"id":"46b36702-7dae-4dad-b1c2-1996ae105250","keyword":"配合比","originalKeyword":"配合比"},{"id":"69440820-bb2f-4272-abe2-bdc4edbd2d6e","keyword":"变","originalKeyword":"徐变"}],"language":"zh","publisherId":"gsytb201702054","title":"再生粗骨料混凝土收缩变性能试验","volume":"36","year":"2017"},{"abstractinfo":"本文阐述了FRP应力松弛、变性能的研究意义,总结了国内外关于应力松弛、变性能的最新研究成果及主要影响因素,并探讨了应力松弛和变的计算模型,对未来FRP长期性能研究的发展方向做出了展望.","authors":[{"authorName":"李建辉","id":"0f7148fe-f8bb-4e01-9827-43b6d6088f0a","originalAuthorName":"李建辉"},{"authorName":"邓宗才","id":"734ba4b3-500c-4ca4-adda-8e3a09ca07b3","originalAuthorName":"邓宗才"}],"doi":"10.3969/j.issn.1003-0999.2007.03.016","fpage":"56","id":"59ffbb46-47b1-40d6-8ec4-254b9f0174de","issue":"3","journal":{"abbrevTitle":"BLGFHCL","coverImgSrc":"journal/img/cover/BLGFHCL.jpg","id":"6","issnPpub":"1003-0999","publisherId":"BLGFHCL","title":"玻璃钢/复合材料"},"keywords":[{"id":"3192da00-b6fe-4a92-a3fe-eec5f9cca17e","keyword":"FRP","originalKeyword":"FRP"},{"id":"812f44d9-8adc-47b7-95e7-d14c2fe8670d","keyword":"应力松弛","originalKeyword":"应力松弛"},{"id":"37e0f5f2-7caa-403e-96f9-d45fa60555ee","keyword":"变","originalKeyword":"徐变"},{"id":"290bc541-6726-480e-a116-34147a7cb2ae","keyword":"前景展望","originalKeyword":"前景展望"}],"language":"zh","publisherId":"blgfhcl200703016","title":"FRP应力松弛及变性能的研究近展","volume":"","year":"2007"},{"abstractinfo":"采用自制的变加载装置,研究了聚乙烯醇(PVA)纤维、双掺粉煤灰和矿渣以及减缩剂对7d等强度混凝土变性能的影响规律,结合与混凝土同水胶比浆体的化合结合水量分析了其影响机理.结果表明,混凝土变系数发展较快,加载100d左右趋于稳定;减缩剂和双掺矿物掺合料均明显降低了混凝土的变系数,以掺减缩剂效果更好,450d值仅为0.63,而PVA纤维增加了变系数;混凝土的变系数随浆体化学结合水量的增加而降低,60d早龄期浆体水化有利于降低变系数,450d后期水化产物对降低混凝土的变系数贡献不大.","authors":[{"authorName":"何智海","id":"d284a902-9f8e-4b08-94b4-bb64a0ab69a8","originalAuthorName":"何智海"},{"authorName":"钱春香","id":"0ffbbe0c-1b53-4782-aa33-1b1c9ed2432d","originalAuthorName":"钱春香"},{"authorName":"钱桂枫","id":"dd861e3b-72df-4e42-acc8-72f6bb385518","originalAuthorName":"钱桂枫"},{"authorName":"孟凡利","id":"28a07ab2-0d08-4d67-b8cb-ea65ad3f7ef0","originalAuthorName":"孟凡利"},{"authorName":"程飞","id":"8f433d59-aca3-4626-a346-16e01790b998","originalAuthorName":"程飞"},{"authorName":"高祥彪","id":"6c683991-a878-456e-ae60-df7fce0e0d8b","originalAuthorName":"高祥彪"},{"authorName":"庄园","id":"e0d49cad-3f8c-4544-8501-e47b67079e01","originalAuthorName":"庄园"}],"doi":"","fpage":"925","id":"012cf742-03f0-418f-88af-49ca86d1e1fb","issue":"5","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"7473f418-c202-45ab-81d0-4cf29e9e7c03","keyword":"混凝土","originalKeyword":"混凝土"},{"id":"48514fe2-20e4-4695-aa58-fea087a0e070","keyword":"变系数","originalKeyword":"徐变系数"},{"id":"67a4ff0b-a8af-44ec-bfc8-714b1c72b529","keyword":"化学结合水","originalKeyword":"化学结合水"},{"id":"76f5dbf7-811b-463b-8ed6-5e1d515f895b","keyword":"减缩剂","originalKeyword":"减缩剂"},{"id":"5ea7a23a-4846-468e-a494-01c352107864","keyword":"等强度","originalKeyword":"等强度"}],"language":"zh","publisherId":"gncl201105040","title":"等强度下混凝土组分对变性能的影响","volume":"42","year":"2011"}],"totalpage":8,"totalrecord":73}