{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"以 H2O作氧源, Zn(C2H5)2作 Zn源, N2作载气,以 GaN/Al2O3为衬底采用常压 MOCVD技术 生长了高质量的 ZnO单晶膜.用 <span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>技术测得其对称<span style=\"color:red\">衍射</span> (0002)面ω扫描半峰宽 ( FWHM)为 404arcsec,表明所生长的 ZnO膜具有相当一致的 C轴取向;其对称<span style=\"color:red\">衍射</span>( 0004)面ω- 2θ扫描半峰宽为 358arcsec,表明所生长的 ZnO单晶膜性能良好;同时,该 ZnO薄膜的非对称<span style=\"color:red\">衍射</span> (1012)面ω扫描半峰宽为 420arcsec,表明所生长的 ZnO膜的位错密度为 108cm- 2,与具有器件质 量的 GaN材料相当.","authors":[{"authorName":"戴江南","id":"13f949dc-0c22-4c8a-a4e7-a5f3af6a0060","originalAuthorName":"戴江南"},{"authorName":"王立","id":"9446e2de-842b-4bf0-832e-92be43280754","originalAuthorName":"王立"},{"authorName":"方文卿","id":"22a3bfcc-e13f-4fc7-8582-19f0e29ba3fc","originalAuthorName":"方文卿"},{"authorName":"蒲勇","id":"33ebc574-a435-493f-a77e-56c87deb82bd","originalAuthorName":"蒲勇"},{"authorName":"江风益","id":"f6a8acbd-a6c2-4a3e-8db6-92f7ad86708d","originalAuthorName":"江风益"}],"doi":"10.3969/j.issn.1007-4252.2004.04.006","fpage":"427","id":"ef3744ce-7219-45b0-904e-6a91ef09d090","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"903f9bea-7204-4382-9ab5-7366a4103907","keyword":"MOCVD","originalKeyword":"MOCVD"},{"id":"108c49c9-5883-49e7-9369-2abf607d6ff4","keyword":"ZnO","originalKeyword":"ZnO"},{"id":"d8841365-3095-4f50-8d74-e8d3e57a392f","keyword":"GaN","originalKeyword":"GaN"},{"id":"6b66b60a-8865-4ba1-9ea8-566151f40baa","keyword":"<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>","originalKeyword":"X射线双晶衍射"}],"language":"zh","publisherId":"gnclyqjxb200404006","title":"ZnO/GaN/Al2O3的<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>研究","volume":"10","year":"2004"},{"abstractinfo":"利用超高真空化学气相淀积(UHV/CVD)系统在650℃生长出表面光亮的GeSi单晶在1200L/min分子泵与前级机械泵间串接450L/min分子泵,改善了生长环境串接分子泵后生长的样品的<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>分析表明,外延层<span style=\"color:red\">衍射</span>峰半宽仅为198arcsec,且出现了Pendellosung干涉条纹,说明外延层结晶质量很好.","authors":[{"authorName":"李代宗","id":"ca462595-8301-4b90-a3ca-1ab4ded32f17","originalAuthorName":"李代宗"},{"authorName":"于卓","id":"fcbf8081-f429-4c64-84c8-f81a6333b67a","originalAuthorName":"于卓"},{"authorName":"雷震霖","id":"9122b689-bce4-4834-8a2e-ab36f049415e","originalAuthorName":"雷震霖"},{"authorName":"成步文","id":"ed3d73be-9165-4c00-ab48-6b32fa76d61b","originalAuthorName":"成步文"},{"authorName":"余金中","id":"30fe9d64-d2a5-4236-ae48-26690479db74","originalAuthorName":"余金中"},{"authorName":"王启明","id":"c5e0af48-53ae-474a-b247-39b1bd1bef56","originalAuthorName":"王启明"}],"doi":"10.3321/j.issn:1005-3093.2000.02.020","fpage":"215","id":"82ffee62-bb29-420e-9bef-8605276772a4","issue":"2","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"a908c142-c6c5-495e-92f3-8d4bbf66ff5f","keyword":"超高真空化学气相淀积","originalKeyword":"超高真空化学气相淀积"},{"id":"50f3b239-dcae-48c5-890b-74a40b1d177e","keyword":"GeSi","originalKeyword":"GeSi"},{"id":"460852ce-163a-4f33-80f5-8b9ebad2338c","keyword":"<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>","originalKeyword":"X射线双晶衍射"}],"language":"zh","publisherId":"clyjxb200002020","title":"GexSi1-<span style=\"color:red\">x</span>材料生长的改善","volume":"14","year":"2000"},{"abstractinfo":"低压MOCVD方法生长了掺Si与不掺Si的AlGaInP/GaInP多量子阱结构,运用<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>与光荧光技术研究了掺Si对量子阱性能的影响.测试结果表明掺Si使量子阱的生长速度增加,掺Si量子阱的光荧光强度比未掺Si量子阱的光荧光强度改善了一个数量级.","authors":[{"authorName":"谭春华","id":"81069395-b85f-4dea-8f99-656cc25b267f","originalAuthorName":"谭春华"},{"authorName":"范广涵","id":"52d06d2c-f622-4efb-bd83-68179bf64bec","originalAuthorName":"范广涵"},{"authorName":"李述体","id":"d38ad0d8-e6c2-4690-87a5-d7671b5cef94","originalAuthorName":"李述体"},{"authorName":"周天明","id":"4e52b160-e6eb-40ee-b9b5-f10948ac0e79","originalAuthorName":"周天明"},{"authorName":"黄琨","id":"d7caa704-df53-46ed-8a70-af1ecc7958b0","originalAuthorName":"黄琨"},{"authorName":"雷勇","id":"de039e39-e31a-43f5-8ff6-97a5dc59bb65","originalAuthorName":"雷勇"}],"doi":"10.3969/j.issn.1007-5461.2005.03.025","fpage":"436","id":"4d03176e-52ef-465f-8ce1-5fd2b9f88df2","issue":"3","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"170a942f-8d82-4882-a355-369bb95c8dbb","keyword":"光电子学","originalKeyword":"光电子学"},{"id":"0259a728-104e-469e-8933-761d856db8e4","keyword":"<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>","originalKeyword":"X射线双晶衍射"},{"id":"5f34e17b-d869-477b-ac34-ecb1ed16bd9a","keyword":"金属有机化学气相沉积","originalKeyword":"金属有机化学气相沉积"},{"id":"fd45ad99-00e6-4278-bd0a-02221d2f6425","keyword":"量子阱","originalKeyword":"量子阱"},{"id":"75352a25-1aaf-4604-909c-e9620db13f80","keyword":"光荧光","originalKeyword":"光荧光"}],"language":"zh","publisherId":"lzdzxb200503025","title":"Si掺杂的AlGaInP/GaInP多量子阱光学特性","volume":"22","year":"2005"},{"abstractinfo":"采用卢瑟福背散射/沟道技术,<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>技术和光致发光技术对几个以MOCVD技术生长的蓝带发光差异明显的未掺杂GaN外延膜和GaN:Mg外延膜进行了测试.结果表明,未掺杂GaN薄膜中出现的2.9 eV左右的蓝带发光与薄膜的结晶品质密切相关.随未掺杂GaN的蓝带强度与带边强度之比增大,GaN的卢瑟福背散射/沟道谱最低产额增大,<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>峰半高宽增大.未掺杂GaN薄膜的蓝带发光与薄膜中的某种本征缺陷有关.研究还表明,未掺杂GaN中出现的蓝带与GaN:Mg外延膜中出现的2.9 eV左右的发光峰的发光机理不同.","authors":[{"authorName":"李述体","id":"896397ad-99d3-4f7a-b60a-6e316d1ad2a6","originalAuthorName":"李述体"},{"authorName":"江风益","id":"dfc30265-9379-4ef4-91ca-8b0332fe187a","originalAuthorName":"江风益"},{"authorName":"范广涵","id":"da994ced-c662-4734-9d10-4ddf05fb2945","originalAuthorName":"范广涵"},{"authorName":"王立","id":"5e05fbab-d255-461a-a384-bf05ff83884d","originalAuthorName":"王立"},{"authorName":"莫春兰","id":"b2227fc3-804f-40fc-8baf-e4e5dcfee020","originalAuthorName":"莫春兰"},{"authorName":"方文卿","id":"6e5a2f16-5605-43ec-96d4-fe7f39884f51","originalAuthorName":"方文卿"}],"doi":"10.3969/j.issn.1007-5461.2004.03.017","fpage":"366","id":"94d5018f-6481-4bdd-81cd-75348ee3f3b8","issue":"3","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"77e7c344-28f6-48d6-a05d-cb8697c562bc","keyword":"薄膜光学","originalKeyword":"薄膜光学"},{"id":"c1016ff3-5a6a-43b0-aeac-11f381135668","keyword":"GaN","originalKeyword":"GaN"},{"id":"f9ba652c-b7fa-4b4a-b70f-16a0d97444d5","keyword":"卢瑟福背散射/沟道","originalKeyword":"卢瑟福背散射/沟道"},{"id":"8b9cad51-2100-4c54-8911-af40d16b5f8f","keyword":"<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>","originalKeyword":"X射线双晶衍射"},{"id":"3d9ff38a-1f02-4b7e-beac-0bae708e7223","keyword":"光致发光","originalKeyword":"光致发光"}],"language":"zh","publisherId":"lzdzxb200403017","title":"未掺杂GaN外延膜的结晶特性与蓝带发光关系的研究","volume":"21","year":"2004"},{"abstractinfo":"用等离子辅助分子束外延(P-MBE)的方法,在蓝宝石c-平面上外延生长了MgxZn1-xO合金薄膜.在0≤<span style=\"color:red\">x</span>≤0.2范围内MgxZn1-xO薄膜保持着六角纤锌矿结构不变.原位反射式高能电子<span style=\"color:red\">衍射</span>图样和<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>谱的结果表明生长的样品是单晶薄膜.随着<span style=\"color:red\">x</span>值逐渐增大,Mg2+离子逐渐进入ZnO的晶格,<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>测得样品的(002)取向的半高宽度从0.249°增加到0.708°,表明结晶质量逐渐下降,(002)方向的<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">衍射</span>峰向大角度方向移动,晶格常数c由5.205(A)减小到5.185(A).透射光谱的结果表明,合金薄膜的吸收边随着Mg离子的掺入逐渐向高能侧移动,室温光致发光谱出现很强的紫外发光(NBE)峰,没有观察到深能级(DL)发射,且随着Mg掺入量的增加,紫外发光峰有明显的蓝移,这与透射光谱的结果是相吻合的.","authors":[{"authorName":"吴春霞","id":"74588ca0-a856-44f0-a2e0-48f3c5de8148","originalAuthorName":"吴春霞"},{"authorName":"吕有明","id":"a4a78f7a-96c4-4a7d-ab69-8226d40d7407","originalAuthorName":"吕有明"},{"authorName":"李炳辉","id":"07d9a0e0-3406-41c0-8f89-af0303a3efc1","originalAuthorName":"李炳辉"},{"authorName":"赵东旭","id":"fb61088c-62e8-4869-b1a3-58392c1371a3","originalAuthorName":"赵东旭"},{"authorName":"刘益春","id":"2b14d1ac-5a6d-45b8-9805-a85498e94d44","originalAuthorName":"刘益春"},{"authorName":"申德振","id":"d1f8d1c6-bbfd-485f-bd95-7f4111562536","originalAuthorName":"申德振"},{"authorName":"张吉英","id":"959d92e1-77c4-42f9-bcb7-40ba83d5d4f2","originalAuthorName":"张吉英"},{"authorName":"范希武","id":"4790c932-9ddf-4643-9f6a-f96cd7b82e24","originalAuthorName":"范希武"}],"doi":"10.3969/j.issn.1007-4252.2003.04.024","fpage":"477","id":"be2d81e1-cdd3-4af9-b98e-9e7f32b79de8","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"2f5eef6d-a78d-47b7-974d-912379b59dd2","keyword":"MgxZn1- xO","originalKeyword":"MgxZn1- xO"},{"id":"a343fae1-1704-4b98-b9c2-5eabfeabc978","keyword":"P- MBE","originalKeyword":"P- MBE"},{"id":"9704607b-37f7-4a8c-a639-d4ce968f7204","keyword":"<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>","originalKeyword":"X射线双晶衍射"},{"id":"527e957f-6da3-443e-aa00-6530bf638d39","keyword":"光致发光","originalKeyword":"光致发光"}],"language":"zh","publisherId":"gnclyqjxb200304024","title":"MgxZn1-xO单晶薄膜的分子束外延生长及结构表征","volume":"9","year":"2003"},{"abstractinfo":"本文介绍了<span style=\"color:red\">X</span> <span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>术的基本原理。描述了<span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>技术在半异体材料的离子注入、单层及多层异质结外延膜、应变超晶格等新型材料研究中的应用。给出了<span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>对Si 中高能B~+注入和In_xGa_(1-<span style=\"color:red\">x</span>)As/GaAs 超晶格研究的实例。","authors":[{"authorName":"朱南昌","id":"87ecda89-8df5-45c2-ac92-013c4cd9d585","originalAuthorName":"朱南昌"},{"authorName":"李润身","id":"e690b101-2905-4d78-bebb-1b67e7ecbefe","originalAuthorName":"李润身"},{"authorName":"陈京一","id":"cf505899-7fca-4730-9b64-f87494ee7f08","originalAuthorName":"陈京一"}],"categoryName":"|","doi":"","fpage":"129","id":"2c86be60-dadb-48dd-8396-30d6483da77e","issue":"2","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"f6687952-e1a0-4678-a5b6-8c5c3fca2e62","keyword":"离子注入","originalKeyword":"离子注入"},{"id":"9f8e9d4f-1812-4646-a9e2-0069a0d5e572","keyword":"<span style=\"color:red\">X</span>-ray double-crystal diffraction","originalKeyword":"X-ray double-crystal diffraction"},{"id":"bfac3bf7-0158-43dd-9562-5e4bc504ed92","keyword":"computer simulation","originalKeyword":"computer simulation"}],"language":"zh","publisherId":"1005-3093_1991_2_5","title":"<span style=\"color:red\">X</span> <span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>在新材料研究中的应用","volume":"5","year":"1991"},{"abstractinfo":"报道了气态源分子束外延(GSMBE)技术生长的Φ50 mm,Φ75 mm InGaP/GaAs材料的晶体完整性,组分均匀性和表面缺陷密度.用Philips <span style=\"color:red\">X</span>-Pert′s 四晶<span style=\"color:red\">衍射</span>仪沿Φ50 mm,Φ75 mm InGaP/GaAs样品的<span style=\"color:red\">x</span>轴和y轴以5 mm间隔测量ω/2θ<span style=\"color:red\">双晶</span>摇摆曲线,获得沿<span style=\"color:red\">x</span>轴和y轴方向的晶格失配度分布和组分涨落分布.结果表明,用GSMBE生长的Φ50 mm和Φ75 mm In0.49Ga0.51P与GaAs衬底的失配度分别为1×10-4和1×10-5,组分波动Φ50 mm沿<span style=\"color:red\">x</span>轴和y轴分别为±0.1%和±0.2%,Φ75 mm <±1%.表面缺陷密度在1×10～1×102 cm-2.","authors":[{"authorName":"李爱珍","id":"a8e92ff3-2117-4dcc-986d-c22529aff750","originalAuthorName":"李爱珍"},{"authorName":"李华","id":"748ff436-e630-4b83-b94f-e2f58c6ecfc6","originalAuthorName":"李华"},{"authorName":"李存才","id":"78364693-127a-4b4f-adb1-b848402dda2d","originalAuthorName":"李存才"},{"authorName":"胡建","id":"3f4f8b29-0af9-48c1-9942-660163297506","originalAuthorName":"胡建"},{"authorName":"唐雄心","id":"c1b3d958-4e03-4a4b-89c6-2facaffa3f12","originalAuthorName":"唐雄心"},{"authorName":"齐鸣","id":"4d6d490a-75fe-4d03-a800-aa900c5cce60","originalAuthorName":"齐鸣"}],"doi":"10.3969/j.issn.0258-7076.2004.03.032","fpage":"569","id":"b337b006-0f2b-4231-8694-cabae7af4bbf","issue":"3","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"011b4be6-ce08-45de-80ba-3506622b078d","keyword":"InGaP","originalKeyword":"InGaP"},{"id":"ee7b394d-192e-4e0b-b06b-cbfe124c4d36","keyword":"均匀性","originalKeyword":"均匀性"},{"id":"d98d3876-c0c9-4eb0-b6fe-2ff53f9ba090","keyword":"气态源分子束外延","originalKeyword":"气态源分子束外延"},{"id":"3ce2077f-892d-4bfc-9ca8-a7a2cac0cf2a","keyword":"<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>","originalKeyword":"X射线双晶衍射"},{"id":"58a77dc2-05e8-44a7-b2d2-741d71bad026","keyword":"InGaP/GaAs","originalKeyword":"InGaP/GaAs"}],"language":"zh","publisherId":"xyjs200403032","title":"GSMBE InGaP/GaAs材料大面积均匀性研究","volume":"28","year":"2004"},{"abstractinfo":"用<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>方法测定了自组织生长的InAs/GaAs量子点的摇摆曲线,根据Takagi-Taupin方程对曲线进行了拟合.在考虑量子点层晶格失配的情况下,理论曲线和实验曲线符合得很好,从而确定了量子点垂直样品表面的失配度,约为4～6%,这与宏观连续体弹性理论的预测相近.结合电镜、原子力显微镜的观察结果表明对子单层沉积方法获得的量子点层采用化合物构层进行拟合所得结果是合理的.","authors":[{"authorName":"刘艳美","id":"745fd323-915b-40bf-8f6b-4c9f036e2540","originalAuthorName":"刘艳美"},{"authorName":"赵宗彦","id":"bf2d8e9c-09f4-4c51-bf18-975a17793ac3","originalAuthorName":"赵宗彦"},{"authorName":"杨坤堂","id":"fd03b39a-3ee4-4fa6-98dd-f502abfba8cf","originalAuthorName":"杨坤堂"},{"authorName":"徐章程","id":"d1f0d13f-c390-4606-b3cf-70dcb525f13f","originalAuthorName":"徐章程"},{"authorName":"韩家骅","id":"e8a3b536-04ee-41e7-b8c9-c7fc9712a161","originalAuthorName":"韩家骅"}],"doi":"10.3969/j.issn.1673-2812.2003.06.022","fpage":"862","id":"e164d62d-3e63-42d5-8a0b-71d24e0c4d71","issue":"6","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"a96e4ae8-fa92-45ae-9fe9-e62f34cdd416","keyword":"量子点","originalKeyword":"量子点"},{"id":"198981e5-09ac-46a5-abd4-fcf4305fb467","keyword":"自组织生长","originalKeyword":"自组织生长"},{"id":"71d8ab6c-796a-4b95-b56e-012edc8c8c44","keyword":"<span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>","originalKeyword":"双晶衍射"},{"id":"1968e9c1-f02e-46b2-851b-7e2df81b2f81","keyword":"摇摆曲线","originalKeyword":"摇摆曲线"}],"language":"zh","publisherId":"clkxygc200306022","title":"自组织InAs/GaAs量子点的<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">双晶</span><span style=\"color:red\">衍射</span>研究","volume":"21","year":"2003"},{"abstractinfo":"简要介绍了德国布鲁克AXS公司新产品D8系列<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">衍射</span>仪的特点、实验方法的分析软件及其应用.该系列仪器具有超前的技术,卓越的品质,可为物质微观结构的分析和前沿研究工作提供有效的解决方案.","authors":[{"authorName":"朱桂兰","id":"63924c42-353e-4684-aad1-4b0cb9f8c94e","originalAuthorName":"朱桂兰"},{"authorName":"何崇智","id":"76219388-01e9-49a3-96af-cb0a0dc04c94","originalAuthorName":"何崇智"}],"doi":"","fpage":"63","id":"39ee6b57-e616-49cf-b32b-97e03848f9ae","issue":"5","journal":{"abbrevTitle":"GTYJXB","coverImgSrc":"journal/img/cover/GTYJXB.jpg","id":"30","issnPpub":"1001-0963","publisherId":"GTYJXB","title":"钢铁研究学报"},"keywords":[{"id":"742f96dd-6899-4d2b-a77f-2c01a0b18ebc","keyword":"<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">衍射</span>仪","originalKeyword":"X射线衍射仪"}],"language":"zh","publisherId":"gtyjxb200105015","title":"新型<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">衍射</span>仪","volume":"13","year":"2001"},{"abstractinfo":"采用计算机辅助实验技术，研究<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">衍射线</span>开在仪器宽化修正过程中Fourier系数变化的规律及其影响，结果表明，只要实测线形接近Gauss 分布，Fourier变换就会导致弯勾效应；Forier变换可引起真实线形的尾部波动及大于实际值的宽化，引入边界条件可予以消除，Kα双线形经过Fourier变换后，Fourier纱数与真实Fourier系数存在着一定的差异。通过真实线形的Fourier变换可以修正.","authors":[{"authorName":"刘刚","id":"71e7d773-7b84-4590-8013-5c8ef9a33479","originalAuthorName":"刘刚"},{"authorName":"梁志德","id":"c72baf78-cd25-439b-a3f4-7a75bcb7f5bf","originalAuthorName":"梁志德"}],"categoryName":"|","doi":"","fpage":"109","id":"8eaac21e-72f9-420f-a0ba-896fc0b4e623","issue":"1","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"577be53d-83af-4b02-a560-613dce82e110","keyword":"<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">衍射线</span>形","originalKeyword":"X射线衍射线形"},{"id":"e4ddf0f4-1a1a-4246-8182-102724c1d0d4","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"0412-1961_2002_1_6","title":"<span style=\"color:red\">X</span><span style=\"color:red\">射线</span><span style=\"color:red\">衍射线</span>形Fourier变换","volume":"38","year":"2002"}],"totalpage":3039,"totalrecord":30383}