{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"低温多晶硅薄膜晶体管(LTPS-TFT)驱动技术是实现大尺寸全彩平板显示的必由之路.然而,传统的低温多晶硅薄膜制作工艺存在着工序复杂、薄膜均匀性差、可能有金属污染且造价昂贵等问题.因此,有必要研发新一代的低温多晶硅薄膜制备工艺以期进一步提高薄膜质量,降低驱动成本.本文首先介绍了金属诱导横向<span style=\"color:red\">晶</span><span style=\"color:red\">化</span>法(MILC)和<span style=\"color:red\">准分子激光</span><span style=\"color:red\">晶</span><span style=\"color:red\">化</span>法(ELA)制备低温多晶硅薄膜的原理,分析了两者各自的优缺点.接着,重点阐述了电感耦合等离子体化学气相沉积法(ICP-CVD)的工作原理和特点,并介绍了目前ICP-CVD在低温多晶硅薄膜制备上所取得的进展.","authors":[{"authorName":"杨定宇","id":"be1691d2-dc76-4c3f-b407-fe0d0fb3d965","originalAuthorName":"杨定宇"},{"authorName":"蒋孟衡","id":"590336f9-1424-4c33-acba-67556695edfd","originalAuthorName":"蒋孟衡"},{"authorName":"杨军","id":"f75b8084-be76-4b9e-bb48-4567293e8170","originalAuthorName":"杨军"}],"doi":"","fpage":"298","id":"96e76a72-c784-4952-a445-b6ab12bb8aee","issue":"2","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"6fd6f503-4992-43db-8da4-c7e58d92f36b","keyword":"低温多晶硅薄膜","originalKeyword":"低温多晶硅薄膜"},{"id":"74cbf2b1-aef6-4b00-8018-8b024c24f40c","keyword":"金属诱导横向<span style=\"color:red\">晶</span><span style=\"color:red\">化</span>","originalKeyword":"金属诱导横向晶化"},{"id":"d8e8ad3f-8cd6-4966-8a5d-a66e18c659a3","keyword":"<span style=\"color:red\">准分子激光</span><span style=\"color:red\">晶</span><span style=\"color:red\">化</span>","originalKeyword":"准分子激光晶化"},{"id":"890df662-8ffb-4c9f-8b13-857ef75b7a0c","keyword":"电感耦合等离子体化学气相沉积","originalKeyword":"电感耦合等离子体化学气相沉积"}],"language":"zh","publisherId":"clkxygc200802035","title":"低温多晶硅薄膜的制备评述","volume":"26","year":"2008"},{"abstractinfo":"提出了一种新的<span style=\"color:red\">晶</span><span style=\"color:red\">化</span>方法--金属诱导-<span style=\"color:red\">准分子激光</span><span style=\"color:red\">晶</span><span style=\"color:red\">化</span>法(MI-ELA).该方法在制备多晶硅(p-Si)薄膜中包括两个步骤:第一步是用镍金属诱导方法(MIC)通过热退火形成NiSi2;第二步是再通过<span style=\"color:red\">准分子激光</span>退火方法(ELA)<span style=\"color:red\">晶</span>化形成p-Si.通过用XRD、Raman与SEM测试,研究了p-Si的结晶性和表面形貌特征.研究发现,MI-ELA方法制备的p-Si与传统的ELA方法和MIC方法相比在形貌上不一样,而且从XRD的特征峰强度可以看出在结晶度上有进一步提高.这个结果源于用MIC方法形成的且与c-Si晶格匹配的NiSi2在ELA中起到晶核的作用.这种<span style=\"color:red\">晶</span><span style=\"color:red\">化</span>方法说明,在ELA中,晶粒生长不再仅仅依赖于熔融非<span style=\"color:red\">晶</span>硅和氧化物表面上残存的随机的固体a-Si作为成核媒介.这种方法不但可以提供晶粒稳定生长条件,而且也可能使获得更大晶粒粒度的<span style=\"color:red\">激光</span><span style=\"color:red\">晶</span><span style=\"color:red\">化</span>能量展宽.","authors":[{"authorName":"廖燕平","id":"c135d32e-c56f-4d12-9b80-d39b8f851d24","originalAuthorName":"廖燕平"},{"authorName":"邵喜斌","id":"57663bad-c906-4885-84e9-6633b06c2d20","originalAuthorName":"邵喜斌"},{"authorName":"吴渊","id":"57e996cc-2e4e-4b8d-8f56-918c23ba5690","originalAuthorName":"吴渊"},{"authorName":"骆文生","id":"66fa3bff-cef1-457a-88e4-40602da0c06c","originalAuthorName":"骆文生"},{"authorName":"付国柱","id":"adca7f5c-8258-4d2e-b543-27b5d9a4be09","originalAuthorName":"付国柱"},{"authorName":"荆海","id":"9c9e9c9d-31ab-4be3-acf8-19d07c03837a","originalAuthorName":"荆海"},{"authorName":"马凯","id":"55d74c71-fe97-4f9d-98bb-a497b33fc0fc","originalAuthorName":"马凯"}],"doi":"10.3969/j.issn.1007-2780.2005.02.010","fpage":"128","id":"b18b59e8-3d75-4392-a0ab-5b6b0a4749c1","issue":"2","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"37f433f6-ac9b-4774-a854-5dfa215f8aef","keyword":"多晶硅薄膜","originalKeyword":"多晶硅薄膜"},{"id":"c8893fbd-0de9-4696-beee-649e11684aa6","keyword":"金属诱导-<span style=\"color:red\">准分子激光</span><span style=\"color:red\">晶</span><span style=\"color:red\">化</span>","originalKeyword":"金属诱导-准分子激光晶化"},{"id":"3a1d40fc-4edb-4119-bf95-50ba5bc6f6cb","keyword":"NiSi2","originalKeyword":"NiSi2"}],"language":"zh","publisherId":"yjyxs200502010","title":"用金属诱导-<span style=\"color:red\">准分子激光</span><span style=\"color:red\">晶</span><span style=\"color:red\">化</span>法制备多晶硅薄膜","volume":"20","year":"2005"},{"abstractinfo":"对高压放电泵浦的<span style=\"color:red\">准分子激光</span>放电回路进行了探讨.运用等效电路方法,给出了<span style=\"color:red\">准分子激光</span>工作气体在击穿放电前后的电路变化规律,同时分析了能量转移效率与回路参数之间的关系,这为设计高效率和稳定可靠的<span style=\"color:red\">准分子</span>放电回路提供了理论上的参考依据.","authors":[{"authorName":"邓国庆","id":"06f83dfc-23fc-4ecb-8dd6-aeab5adf590b","originalAuthorName":"邓国庆"},{"authorName":"余吟山","id":"42a68c02-d13d-44c9-8747-4992f385b9f5","originalAuthorName":"余吟山"},{"authorName":"朱志强","id":"389f55d4-643a-47f4-a8e0-b30124ead918","originalAuthorName":"朱志强"}],"doi":"10.3969/j.issn.1007-5461.2004.04.013","fpage":"456","id":"543c0604-ee4a-4710-953e-08f27dfa88a9","issue":"4","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"002554f7-e99b-45c9-a8f4-1faf3c8548a2","keyword":"<span style=\"color:red\">激光</span>技术","originalKeyword":"激光技术"},{"id":"9d239793-1c10-44e3-87d3-6e4f10b4fa3f","keyword":"<span style=\"color:red\">准分子激光</span>","originalKeyword":"准分子激光"},{"id":"1923f05c-061a-4269-897c-03251d49d2cd","keyword":"放电泵浦","originalKeyword":"放电泵浦"},{"id":"2e93cc7b-0b4b-40dc-bbe6-a3d28e7c3e2d","keyword":"等效电路","originalKeyword":"等效电路"}],"language":"zh","publisherId":"lzdzxb200404013","title":"<span style=\"color:red\">准分子激光</span>放电回路的研究","volume":"21","year":"2004"},{"abstractinfo":"针对光刻用<span style=\"color:red\">准分子激光</span>器的激励技术,利用拉普拉斯变换方程对脉冲变压器高压充电过程进行了分析,验证了耦合系数于与压缩高压充电时间的重要作用.耦合系数越接近于1,高压充电时间越短.介绍了充电电路与磁开关结合后完成快放电的过程,并提出了一种控制谐振充电的方法.实现了对高压电容50μs内的快充电.","authors":[{"authorName":"黄德文","id":"0b8f8c46-7ed4-47ea-9743-d37ff6f1aba9","originalAuthorName":"黄德文"},{"authorName":"游利兵","id":"1aa51d25-2c73-451d-9335-006a7caa0b06","originalAuthorName":"游利兵"},{"authorName":"梁勖","id":"2ba8f3b5-8a34-4644-89b1-625fa26d7731","originalAuthorName":"梁勖"},{"authorName":"余吟山","id":"242c4ada-c7e7-4003-8e74-635a3c9d6793","originalAuthorName":"余吟山"}],"doi":"10.3969/j.issn.1007-5461.2009.01.007","fpage":"39","id":"35263e85-3d0a-4eb6-a9b4-a408256ef615","issue":"1","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"205c2d34-afa6-4690-9845-4f51914bb1d9","keyword":"<span style=\"color:red\">激光</span>技术","originalKeyword":"激光技术"},{"id":"528426da-b4dd-411c-bc19-c9acf95a8709","keyword":"脉冲升压式电源","originalKeyword":"脉冲升压式电源"},{"id":"b91937f3-a85b-448d-bbcd-b1fc9cc04954","keyword":"拉普拉斯变换","originalKeyword":"拉普拉斯变换"},{"id":"3902ecd5-f26c-40aa-af8e-2658d735ca39","keyword":"高重复率","originalKeyword":"高重复率"},{"id":"93c402f5-b909-4809-bfd6-1d8e196a9cd1","keyword":"光刻","originalKeyword":"光刻"}],"language":"zh","publisherId":"lzdzxb200901007","title":"脉冲升压式<span style=\"color:red\">准分子激光</span>电源研究","volume":"26","year":"2009"},{"abstractinfo":"采用脉冲<span style=\"color:red\">准分子激光</span>大面积扫描沉积技术,在Si(111)单晶衬底上沉积了WOx薄膜.采用X射线衍射(XRD)、喇曼光谱(RS)、付里叶红外光谱(FT-IR)及透射电镜扫描附件(STEM)对不同条件下沉积的样品进行了结构分析.结果表明,氧分压和沉积温度是决定薄膜结构和成份的主要参数.在沉积温度300°C以上及20Pa氧压下得到了三斜相纳米<span style=\"color:red\">晶</span>WO3薄膜.","authors":[{"authorName":"方国家","id":"feb766c7-af8d-4086-beb2-32ae5ff492cf","originalAuthorName":"方国家"},{"authorName":"刘祖黎","id":"acf97e06-05a8-407c-af25-30358faff761","originalAuthorName":"刘祖黎"},{"authorName":"姚凯伦","id":"2cce0b30-e779-4be5-9035-583d707357b0","originalAuthorName":"姚凯伦"}],"doi":"10.3321/j.issn:1000-324X.2002.01.023","fpage":"139","id":"db8cc31c-1d7e-492f-b1c5-d3025f2d9222","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"6e2a1c4c-23d1-44fe-8d8a-2072dc9d48ac","keyword":"三氧化钨薄膜","originalKeyword":"三氧化钨薄膜"},{"id":"7827cc63-e872-485c-b420-d04da8e45c25","keyword":"纳米<span style=\"color:red\">晶</span>","originalKeyword":"纳米晶"},{"id":"aebb7ae4-1e91-48ca-9afe-a523ddbd967a","keyword":"脉冲<span style=\"color:red\">准分子激光</span>沉积(PLD)","originalKeyword":"脉冲准分子激光沉积(PLD)"},{"id":"9e9e87ba-6121-42a6-87eb-0fd664db40eb","keyword":"结构分析","originalKeyword":"结构分析"},{"id":"a8c7407b-6c9a-4963-a074-656d278db6ec","keyword":"Si(111)衬底","originalKeyword":"Si(111)衬底"}],"language":"zh","publisherId":"wjclxb200201023","title":"WO3/Si纳米<span style=\"color:red\">晶</span>薄膜的脉冲<span style=\"color:red\">准分子激光</span>沉积及结构分析","volume":"17","year":"2002"},{"abstractinfo":"本文对<span style=\"color:red\">激光</span>激励的一种新技术—磁约束放电激励技术在XeCl<span style=\"color:red\">准分子激光</span>器中的应用进行了实验研究。并分析比较了以Ar或He为缓冲气体时磁约束放电激励对XeCl<span style=\"color:red\">准分子激光</span>输出的影响。","authors":[{"authorName":"王涓","id":"ae352c82-bc50-4c17-819e-79b19e3de9dd","originalAuthorName":"王涓"},{"authorName":"谷怀民","id":"2568bef1-d15a-4dbc-875a-3c7c572aa06d","originalAuthorName":"谷怀民"},{"authorName":"陈永荣","id":"551e0b7f-f8ce-4d33-bc66-e0b02e93e3ea","originalAuthorName":"陈永荣"},{"authorName":"胡雪金","id":"ed5f473b-5154-4122-95d4-b82048e5b5eb","originalAuthorName":"胡雪金"},{"authorName":"丘军林","id":"d052a6cc-cbf2-421c-8566-2f3a8c5c2c7f","originalAuthorName":"丘军林"},{"authorName":"龚志伟","id":"b470ad04-dee3-4e73-a81f-475b60178e64","originalAuthorName":"龚志伟"},{"authorName":"周小伙","id":"7383f11c-d0d1-4cc8-a1a5-6a3deeceb15f","originalAuthorName":"周小伙"},{"authorName":"孙海斌","id":"d0936170-743a-4a29-ad4d-9bca522bf168","originalAuthorName":"孙海斌"}],"doi":"10.3969/j.issn.1007-5461.2000.02.009","fpage":"150","id":"049a5d0d-a912-463f-a421-86a43c584faa","issue":"2","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"f8ef269a-e884-4684-87bf-c7e1cd5068bd","keyword":"磁约束放电激励","originalKeyword":"磁约束放电激励"},{"id":"aa8e8481-29f3-4883-b9bb-23d110518909","keyword":"XeCl<span style=\"color:red\">准分子激光</span>器","originalKeyword":"XeCl准分子激光器"},{"id":"0be5aecb-a00e-4f8b-a2c3-c5ae6ab3c5a0","keyword":"Ar及He缓冲气体","originalKeyword":"Ar及He缓冲气体"}],"language":"zh","publisherId":"lzdzxb200002009","title":"磁约束放电激励的XeCl<span style=\"color:red\">准分子激光</span>器","volume":"17","year":"2000"},{"abstractinfo":"193nm ArF<span style=\"color:red\">准分子激光</span>光刻技术已广泛应用于90 nm以下节点半导体量产.分析了近期发展用于改进<span style=\"color:red\">准分子激光</span>性能的关键技术:主振-功率再生放大(MOPRA)结构,主振-功率振荡(MOPO)结构,主动光谱带宽稳定技术,先进的气体管理技术.对光刻用<span style=\"color:red\">准分子激光</span>光源技术发展趋势进行了简要的讨论.","authors":[{"authorName":"游利兵","id":"bff1924f-093e-423d-988b-d30b9e8d0310","originalAuthorName":"游利兵"},{"authorName":"周翊","id":"304dbb18-3beb-45b1-8944-bd093159bb4d","originalAuthorName":"周翊"},{"authorName":"梁勖","id":"2f7c6b5e-b9d6-4390-9f44-d985b07ea421","originalAuthorName":"梁勖"},{"authorName":"余吟山","id":"31d6a3bf-97ec-4319-9d99-49892e2d47de","originalAuthorName":"余吟山"},{"authorName":"方晓东","id":"3f174457-6071-4631-8c56-a8748c0fe3a5","originalAuthorName":"方晓东"},{"authorName":"王宇","id":"6d6a436b-19fb-4172-9324-20f67605fec1","originalAuthorName":"王宇"}],"doi":"10.3969/J.issn.1007-5461.2010.05.002","fpage":"522","id":"07486662-df0d-42a0-bb0e-53ef91c575f4","issue":"5","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"15cb7053-1b4c-40f2-b1ee-785c0e8b34b4","keyword":"<span style=\"color:red\">激光</span>技术","originalKeyword":"激光技术"},{"id":"2bf58d6b-4005-45e5-a53c-6892d869f726","keyword":"ArF<span style=\"color:red\">准分子激光</span>","originalKeyword":"ArF准分子激光"},{"id":"70980ec7-2ba3-4722-afbe-41579dedeff9","keyword":"光刻","originalKeyword":"光刻"},{"id":"3925720f-cc64-45d3-85c1-324ba0836aed","keyword":"双图形","originalKeyword":"双图形"}],"language":"zh","publisherId":"lzdzxb201005002","title":"近期光刻用ArF<span style=\"color:red\">准分子激光</span>技术发展","volume":"27","year":"2010"},{"abstractinfo":"阐述了在光刻应用中<span style=\"color:red\">准分子激光</span>束整形的原因和整形前后光束能量空间分布结果,并对建立<span style=\"color:red\">准分子激光</span>束整形的理论模型--高斯-谢尔模型(GSM)的方法进行了介绍.总结和分析了微透镜阵列和衍射相位光栅等光束均质器用于光刻<span style=\"color:red\">激光</span>束整形的优缺点,包括它们的整形能力、能量损失、干涉效应以及波前和振幅均匀<span style=\"color:red\">化</span>控制等;同时对主要整形器件的原理、特性和进展情况进行了简要综述.","authors":[{"authorName":"林清华","id":"fb4232f0-8b25-4a7b-9116-5f4975e4698d","originalAuthorName":"林清华"},{"authorName":"宋超","id":"4d77d65b-3515-47ce-ae29-b47f775115d2","originalAuthorName":"宋超"},{"authorName":"王鲁宾","id":"f2fcc42d-4b81-47e5-a1d1-a6a7185fa352","originalAuthorName":"王鲁宾"},{"authorName":"周金运","id":"4b20f4df-7a30-43ad-9487-2779c85b5282","originalAuthorName":"周金运"}],"doi":"10.3969/j.issn.1007-5461.2007.04.003","fpage":"415","id":"72c6a6da-9f54-4f8c-9004-198c62c41713","issue":"4","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"f7ce5964-748d-443a-ad8e-f7f2ccdece7c","keyword":"<span style=\"color:red\">激光</span>技术","originalKeyword":"激光技术"},{"id":"fd107fbf-a0d6-43f5-9554-520a17bef1a1","keyword":"<span style=\"color:red\">准分子激光</span>束整形","originalKeyword":"准分子激光束整形"},{"id":"f167c2e7-fd0e-4404-a9ed-074637061693","keyword":"光刻","originalKeyword":"光刻"},{"id":"90b7db70-1fd9-4330-8348-8a53217dfdd3","keyword":"微透镜阵列","originalKeyword":"微透镜阵列"},{"id":"486f7f23-b83f-4685-9aa6-a39b85e1d5d2","keyword":"衍射相位光栅","originalKeyword":"衍射相位光栅"}],"language":"zh","publisherId":"lzdzxb200704003","title":"用于光刻的<span style=\"color:red\">准分子激光</span>束整形及其研究进展","volume":"24","year":"2007"},{"abstractinfo":"报告了波长248 nm<span style=\"color:red\">准分子激光</span>对RR - P3 HT薄膜照射加工的实验结果.发现248 nm<span style=\"color:red\">准分子激光</span>对RR - P3HT薄膜材料的烧蚀机制既包含光化学作用也包含光热作用.烧蚀作用使RR -P3 HT薄膜分光光谱发生了蓝移,并改变了滴涂法制备的RR - P3 HT薄膜在基板上的配向.","authors":[{"authorName":"茹家胜","id":"000c09b3-a4f0-4cba-882c-1287ecdbbdba","originalAuthorName":"茹家胜"}],"doi":"10.3969/j.issn.1671-6620.2011.04.016","fpage":"305","id":"3c8ddc7e-0b10-4600-9509-38b4dfb2fe8d","issue":"4","journal":{"abbrevTitle":"CLYYJXB","coverImgSrc":"journal/img/cover/CLYYJXB.jpg","id":"17","issnPpub":"1671-6620","publisherId":"CLYYJXB","title":"材料与冶金学报"},"keywords":[{"id":"6eed4192-d838-4b1d-87f8-b4789123115d","keyword":"高度区域规则的聚合物薄膜","originalKeyword":"高度区域规则的聚合物薄膜"},{"id":"024394c6-fbcd-423c-a3df-15b48ea31151","keyword":"聚3-已基噻吩","originalKeyword":"聚3-已基噻吩"},{"id":"8f336cac-82e2-48b2-ad65-bd9c9ba79861","keyword":"<span style=\"color:red\">准分子激光</span>","originalKeyword":"准分子激光"},{"id":"cac5c875-0de6-4936-9aca-95c287a5faa4","keyword":"烧蚀","originalKeyword":"烧蚀"}],"language":"zh","publisherId":"clyyjxb201104016","title":"<span style=\"color:red\">准分子激光</span>照射对RR-P3HT薄膜形态影响","volume":"10","year":"2011"},{"abstractinfo":"在普通平-平腔XeCl<span style=\"color:red\">准分子激光</span>器中,用定向棱镜替代平面全反射镜,构成定向棱镜谐振腔<span style=\"color:red\">准分子激光</span>器.该<span style=\"color:red\">激光</span>器获得了高抗失调能力和在近场具有相干平顶式的均匀光场、远场具有能量集中的光场分布,压缩了光束发散角,改善和提高了光束质量.提供了一种实用新型的<span style=\"color:red\">准分子激光</span>器技术.","authors":[{"authorName":"程勇","id":"723357f1-9d74-4c49-8e8b-a639e042372a","originalAuthorName":"程勇"},{"authorName":"孙斌","id":"7b2f4a0f-a02b-4dcd-b329-5b3c1c621310","originalAuthorName":"孙斌"},{"authorName":"王晓兵","id":"28f9f1fa-59eb-4617-b271-3a70492d9d89","originalAuthorName":"王晓兵"},{"authorName":"王古常","id":"3982bb77-2176-4f57-b2de-10d4df28fb3c","originalAuthorName":"王古常"},{"authorName":"胡雪金","id":"3ded4ef0-bae8-4202-819f-589662cc4302","originalAuthorName":"胡雪金"},{"authorName":"毛少卿","id":"967751ad-365d-4906-867d-0e4685d982da","originalAuthorName":"毛少卿"}],"doi":"10.3969/j.issn.1007-5461.2001.06.011","fpage":"521","id":"4e982d75-c512-4103-a049-9641c87a9a90","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"09ae72af-18de-4f8c-b598-2be5dc2af888","keyword":"<span style=\"color:red\">准分子激光</span>器","originalKeyword":"准分子激光器"},{"id":"9611590d-2a87-48a6-9d2e-02a5dc7731cf","keyword":"定向棱镜谐振腔","originalKeyword":"定向棱镜谐振腔"},{"id":"f4a19757-6234-41c9-ab99-0041dba8264f","keyword":"高稳定性","originalKeyword":"高稳定性"},{"id":"5296fbcc-e747-4dab-aa73-d598e57f3bcf","keyword":"光束质量","originalKeyword":"光束质量"}],"language":"zh","publisherId":"lzdzxb200106011","title":"定向棱镜谐振腔<span style=\"color:red\">准分子激光</span>器","volume":"18","year":"2001"}],"totalpage":5814,"totalrecord":58133}