{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用冷等静压成型(CIP)、低真空烧结和热等静压(HIP)烧结技术制备<span style=\"color:red\">ZAO</span><span style=\"color:red\">靶</span><span style=\"color:red\">材</span>,采用排水法、SEM、XRD、光谱发射法(ICPOES)分析了2种烧结方法制备的<span style=\"color:red\">ZAO</span><span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的密度、结晶状态和组织成分.结果表明,<span style=\"color:red\">ZAO</span>细粉经压力造粒后,CIP成型压坯相对密度可达75%以上,该压坯经低真空高温烧结,相对密度达到95%,而采用HIP低温烧结的<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>可达到98%以上,<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>结晶完整,组织成分均匀.","authors":[{"authorName":"杨晓峰","id":"3f86e393-9551-43f6-b418-e547eb382279","originalAuthorName":"杨晓峰"},{"authorName":"李强","id":"4ce58646-c239-4f5d-bf18-ee7221a8d353","originalAuthorName":"李强"},{"authorName":"鲜晓斌","id":"a3ac695c-a2b5-4d3b-93b1-0839c7cc22a1","originalAuthorName":"鲜晓斌"},{"authorName":"蒋春丽","id":"af07aad5-0b89-4a96-967c-5e713de32948","originalAuthorName":"蒋春丽"},{"authorName":"邓广平","id":"89c37145-6d3d-4543-b49b-c84ee506641d","originalAuthorName":"邓广平"}],"doi":"","fpage":"350","id":"2d6db41c-24f9-43cf-9214-27493e515e59","issue":"z1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"07e67cc6-8963-41be-b98b-105939cdee9b","keyword":"<span style=\"color:red\">ZAO</span><span style=\"color:red\">靶</span><span style=\"color:red\">材</span>","originalKeyword":"ZAO靶材"},{"id":"cbce67d8-2387-44f0-a70b-efb1fce4c72c","keyword":"冷等静压","originalKeyword":"冷等静压"},{"id":"aba5a892-cda9-41f1-af2b-afc63bde31b0","keyword":"热等静压","originalKeyword":"热等静压"},{"id":"ef671aca-2e33-4c35-8c4d-1f186bbec128","keyword":"致密性","originalKeyword":"致密性"}],"language":"zh","publisherId":"cldb2009z1103","title":"氧化锌铝(<span style=\"color:red\">ZAO</span>)<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的制备及性能研究","volume":"23","year":"2009"},{"abstractinfo":"以纳米量级的ZnO和Al2O3粉体为原料,通过湿式球磨得到了混合粉体,再经过模压成型与常压烧结工艺即可获得致密度超过95%的ZnO:Al陶瓷<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>,其电阻率可达10-2Ω·cm数量级.高致密度的原因在于纳米粉体具有大的比表面积和粒子数,烧结均匀,气孔较少.低电阻率在于Al3+对Zn2+替代产生的自由电子.同时对<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>中的黑点进行了分析,EDS显示其不仅存在N元素,而且Al含量与致密度比正常区域低,其原因与粉体颗粒的均匀性有关.","authors":[{"authorName":"许积文","id":"d3cd2f94-f72c-4775-8979-f8ac4b356509","originalAuthorName":"许积文"},{"authorName":"王华","id":"d34e7817-b6a8-45b2-9aa1-f2b14be4aa50","originalAuthorName":"王华"},{"authorName":"任明放","id":"743f55da-1da2-47a1-8813-e2af24044b06","originalAuthorName":"任明放"},{"authorName":"杨玲","id":"c2b5db62-bb4d-4617-971b-01cd11865730","originalAuthorName":"杨玲"}],"doi":"","fpage":"1457","id":"4d02326d-6682-433e-b527-aa803516f53f","issue":"9","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"c1aaae11-42f6-4984-a497-1ba51b34f84c","keyword":"<span style=\"color:red\">ZAO</span><span style=\"color:red\">靶</span><span style=\"color:red\">材</span>","originalKeyword":"ZAO靶材"},{"id":"991942c5-9237-42d0-bde3-8f06adb5d082","keyword":"纳米粉体","originalKeyword":"纳米粉体"},{"id":"7d403e33-24aa-40e7-8603-7d64758c5f9f","keyword":"致密度","originalKeyword":"致密度"},{"id":"2b1d934c-f4a5-497b-a26b-691cd0db690b","keyword":"电阻率","originalKeyword":"电阻率"},{"id":"025266b3-2721-4593-b324-8bc3e868bc27","keyword":"黑点","originalKeyword":"黑点"}],"language":"zh","publisherId":"gncl200709019","title":"高密度与低电阻率ZnO:Al<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的制备及缺陷分析","volume":"38","year":"2007"},{"abstractinfo":"铝掺杂氧化锌(<span style=\"color:red\">ZAO</span>)透明导电膜兼具电阻率低和透光性好的特点,在光学与光电子领域具有广阔的应用前景.本文以微米级的高纯超细ZnO和Al2O3粉体为原料,通过控制适当的素坯成型压力,烧结前增加冷等静压环节,优化烧结工艺,制备出了高致密度和低电阻率的<span style=\"color:red\">ZAO</span><span style=\"color:red\">靶</span><span style=\"color:red\">材</span>.在16 MPa的成型压力,120 MPa冷等静压,1350℃×1h的烧结工艺下,制备出了高致密度和低电阻率的<span style=\"color:red\">ZAO</span><span style=\"color:red\">靶</span><span style=\"color:red\">材</span>,其致密度达98.0％,电阻率为1.8 × 10-2 Ω·cm,接近于热等静压所制备出的<span style=\"color:red\">ZAO</span><span style=\"color:red\">靶</span><span style=\"color:red\">材</span>.利用自制<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>,通过射频磁控溅射法,进一步制备出了<span style=\"color:red\">ZAO</span>薄膜,透光率达到88.6％,最低电阻率达到2.1×10-3 Ω·cm.","authors":[{"authorName":"王敏","id":"b736b85c-e7ec-4d45-9de0-3f5d24b46353","originalAuthorName":"王敏"},{"authorName":"吴波","id":"3599ef2d-116e-43a7-accf-8bb082666d74","originalAuthorName":"吴波"},{"authorName":"刘海龙","id":"31308720-eec6-48c0-af79-68640b42be36","originalAuthorName":"刘海龙"},{"authorName":"黄超然","id":"b18ea41f-36b8-40c1-88f5-ab485444505a","originalAuthorName":"黄超然"},{"authorName":"付金彪","id":"bfce8b90-3991-432b-a03a-4f72e99ecc08","originalAuthorName":"付金彪"},{"authorName":"赵春凤","id":"0166ccd1-93e2-431c-9bcd-3807889bf1a5","originalAuthorName":"赵春凤"},{"authorName":"吴育锋","id":"423ef49a-0457-48b1-bbbd-4889ec0e8efe","originalAuthorName":"吴育锋"},{"authorName":"熊远鹏","id":"adcb5547-5e90-4590-8e9d-11b43d4c7e21","originalAuthorName":"熊远鹏"},{"authorName":"周泽友","id":"f81ac2b2-fc7d-4334-9d85-1065d9365a1b","originalAuthorName":"周泽友"}],"doi":"","fpage":"708","id":"a5b6d5fd-0bdb-429e-9169-ee940729af43","issue":"4","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报   "},"keywords":[{"id":"0708ea05-0e91-4477-9cd7-c34f10134e1e","keyword":"透明导电氧化物","originalKeyword":"透明导电氧化物"},{"id":"60679703-09e9-4870-a6e1-50cf31c87fb3","keyword":"常压烧结法","originalKeyword":"常压烧结法"},{"id":"43cd7b4c-d57c-4542-a033-f6dbfb40260c","keyword":"射频磁控溅射","originalKeyword":"射频磁控溅射"},{"id":"46f4d3c3-47d0-46a4-aad3-98a25f68b352","keyword":"显微组织","originalKeyword":"显微组织"},{"id":"1982beb3-c21a-4d86-8b3c-a7c54b0b5761","keyword":"光电性质","originalKeyword":"光电性质"}],"language":"zh","publisherId":"gsytb201304032","title":"常压烧结法制备<span style=\"color:red\">ZAO</span><span style=\"color:red\">靶</span><span style=\"color:red\">材</span>及其性质研究","volume":"32","year":"2013"},{"abstractinfo":"阐述用磁控溅射技术制备综合性能优良的<span style=\"color:red\">ZAO</span>透明导电薄膜及其<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的发展现状和趋势.介绍了透明导电薄膜的基本性能及其存在的问题,进而重点阐述了<span style=\"color:red\">ZAO</span>薄膜的组织结构、导电机制和透光特性.由于其优良的光电特性(用掺杂Al2O3质量分数达3 %的溅射靶<span style=\"color:red\">材</span>可制备电阻率达4.7×10-4 Ω·cm、透射率超过90 %的<span style=\"color:red\">ZAO</span>薄膜)而具有广泛的应用前景.并针对<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的制备和利用磁控溅射技术制备<span style=\"color:red\">ZAO</span>透明导电薄膜过程中存在的问题及发展方向进行了分析讨论.","authors":[{"authorName":"肖华","id":"54ced2e7-c01c-4a60-95d1-ffc49719c25c","originalAuthorName":"肖华"},{"authorName":"王华","id":"7586659a-0d12-4998-92fc-902aad79f2ad","originalAuthorName":"王华"},{"authorName":"任鸣放","id":"6798687a-5968-4308-9d18-fc7133dfdfd1","originalAuthorName":"任鸣放"}],"doi":"10.3969/j.issn.1007-2780.2006.02.012","fpage":"158","id":"ce7ce8a2-58d3-4e6e-af47-a45bbf601f73","issue":"2","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"125cb602-d154-4f18-80c6-3bf6293f1cf0","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"77b0519c-fba1-4bae-8b1b-b87a325cafe2","keyword":"<span style=\"color:red\">ZAO</span>透明导电薄膜","originalKeyword":"ZAO透明导电薄膜"},{"id":"44999ccf-7275-44d4-ab84-a497a6c1e38a","keyword":"溅射靶<span style=\"color:red\">材</span>","originalKeyword":"溅射靶材"},{"id":"fde6ec32-a5d7-444b-b780-cfb5d873c311","keyword":"光电特性","originalKeyword":"光电特性"}],"language":"zh","publisherId":"yjyxs200602012","title":"基于磁控溅射技术的<span style=\"color:red\">ZAO</span>透明导电薄膜及<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的研究","volume":"21","year":"2006"},{"abstractinfo":"采用直流反应磁控溅射技术,制备获得ZnO:Al( <span style=\"color:red\">ZAO</span>)薄膜,研究溅射功率、<span style=\"color:red\">靶</span>基距关键制备工艺参数对<span style=\"color:red\">ZAO</span>薄膜的组织结构、光、电性能的影响,并获得了最佳的溅射功率、<span style=\"color:red\">靶</span>基距制备参数,利用该参数制备<span style=\"color:red\">ZAO</span>薄膜,能够获得在可见光范围内的平均透射率》80％,最低电阻率为4.5×10-4Ω·cm的<span style=\"color:red\">ZAO</span>薄膜,其光电性能均满足应用需求.","authors":[{"authorName":"陆峰","id":"cd9c5546-c867-483c-8f30-2958fa404b16","originalAuthorName":"陆峰"},{"authorName":"徐成海","id":"250d4ebb-7517-4f9d-8605-565ef5586dcd","originalAuthorName":"徐成海"}],"doi":"10.3969/j.issn.1007-4252.2011.06.011","fpage":"586","id":"30fe458b-45d7-42b9-86b9-ed5e118565ef","issue":"6","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"638d1559-8041-4926-b50a-4189006b2b55","keyword":"<span style=\"color:red\">ZAO</span>薄膜","originalKeyword":"ZAO薄膜"},{"id":"7a1cb7d7-e187-455a-9bd6-93219bcc6f3c","keyword":"直流反应溅射","originalKeyword":"直流反应溅射"},{"id":"1f6daefc-9ee2-437e-8163-28b2f8bc6347","keyword":"溅射功率","originalKeyword":"溅射功率"},{"id":"aa87ff31-c748-41c9-911b-7cda4571e688","keyword":"<span style=\"color:red\">靶</span>基距","originalKeyword":"靶基距"}],"language":"zh","publisherId":"gnclyqjxb201106011","title":"溅射功率和<span style=\"color:red\">靶</span>基距对<span style=\"color:red\">ZAO</span>薄膜性能影响","volume":"17","year":"2011"},{"abstractinfo":"概述了ITO<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的应用范围和日益增大的市场需求;对ITO<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的加工技术和工艺进行了探讨,对ITO薄膜的特性进行了描述;并讨论了ITO<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>所面临的技术问题及发展趋势","authors":[{"authorName":"李音波","id":"ea12fd7d-943f-45b9-ab56-773b03e1e865","originalAuthorName":"李音波"},{"authorName":"李卫华","id":"7d3c1efe-fbb7-477a-bb62-c21d776a9fdc","originalAuthorName":"李卫华"},{"authorName":"闫琳","id":"292a3580-10b1-45d7-8f04-08f645eeda19","originalAuthorName":"闫琳"},{"authorName":"余前春","id":"f7eb9df3-496f-4f97-a001-1207d68d79ef","originalAuthorName":"余前春"},{"authorName":"韩志伟","id":"ed837274-cd79-4e66-993e-1e83f24dd548","originalAuthorName":"韩志伟"}],"doi":"","fpage":"996","id":"321ddf3a-d665-429f-af57-c86d85ff2025","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"aaf20b7f-882e-46bc-a2eb-16a044b35d61","keyword":"ITO<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>","originalKeyword":"ITO靶材"},{"id":"b5550262-d71e-41ea-9a0a-3cbe3c0759fa","keyword":"透明导电膜","originalKeyword":"透明导电膜"},{"id":"3fa083eb-65c2-4d6c-b4af-2ed637fd134d","keyword":"烧结工艺","originalKeyword":"烧结工艺"}],"language":"zh","publisherId":"gncl2004z1277","title":"ITO<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的研究现状与发展趋势","volume":"35","year":"2004"},{"abstractinfo":"对于交流磁控溅射氧化锌铝陶瓷<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>制备<span style=\"color:red\">ZAO</span>薄膜,研究了氧流量、基体温度、<span style=\"color:red\">靶</span>电流密度、铝的掺杂量、本底真空压力和工作气体压力对<span style=\"color:red\">ZAO</span>薄膜电学性能的影响规律,优化了工艺参数,为工业化生产提供了实验依据.","authors":[{"authorName":"李士元","id":"b44ddce6-41b6-4881-89a6-a8ee67f1bd9e","originalAuthorName":"李士元"},{"authorName":"付恩刚","id":"d237ea2b-6b87-4795-90bf-e7efc280d372","originalAuthorName":"付恩刚"},{"authorName":"庄大明","id":"23f00836-8fcc-4cc3-a155-b360723dfab4","originalAuthorName":"庄大明"},{"authorName":"张弓","id":"01bb8761-63cb-41be-a223-b4ebaf3ceacc","originalAuthorName":"张弓"}],"doi":"10.3969/j.issn.1005-0299.2005.06.025","fpage":"643","id":"b546eb2c-1afa-4a0b-812e-d7cf9ac80de2","issue":"6","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"e383efc3-d3fd-42fe-97e2-98fb25230c76","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"14d6797e-8f75-4e7f-91f6-d7086e054045","keyword":"<span style=\"color:red\">ZAO</span>薄膜","originalKeyword":"ZAO薄膜"},{"id":"999cb4f1-f9fd-494f-aaeb-dcc3760cb3c6","keyword":"工艺参数","originalKeyword":"工艺参数"},{"id":"e0d38d92-92e0-4e8a-9e4f-7874377ce3aa","keyword":"电阻率","originalKeyword":"电阻率"}],"language":"zh","publisherId":"clkxygy200506025","title":"交流磁控溅射制备<span style=\"color:red\">ZAO</span>薄膜工艺参数的研究","volume":"13","year":"2005"},{"abstractinfo":"针对一种进口和国产的ITO<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>，用AES(SEM、SAM)、XPS、UPS和XRD进行了比较研究，通过研究发现两种样品的差别，为提高国产<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的质量，提供一些改进意见。","authors":[{"authorName":"张滨","id":"ff82e1d3-4f0e-4ec1-bedd-0bd02c6f9210","originalAuthorName":"张滨"},{"authorName":"孙玉珍","id":"16103fe0-e6ef-4312-82d9-717c84d6619d","originalAuthorName":"孙玉珍"},{"authorName":"王文皓","id":"40bc9fd2-958a-458e-a115-79723a88d2d0","originalAuthorName":"王文皓"}],"categoryName":"|","doi":"","fpage":"17","id":"11974665-4ad3-49eb-86ed-b07f35b0951d","issue":"1","journal":{"abbrevTitle":"WLCS","coverImgSrc":"journal/img/cover/WLCS.jpg","id":"64","issnPpub":"1001-0777","publisherId":"WLCS","title":"物理测试"},"keywords":[{"id":"5de8d491-7e65-42d8-9ea2-4468f687d709","keyword":"ITO<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>","originalKeyword":"ITO靶材"},{"id":"35446eff-4429-4a66-905c-2de22c2f3750","keyword":"AES","originalKeyword":"AES"},{"id":"8c3c2df4-50bb-4851-afc8-4b24b4d2aa92","keyword":"XPS","originalKeyword":"XPS"},{"id":"b34deb77-5048-4acb-88ff-15e96a1eea21","keyword":"UPS","originalKeyword":"UPS"},{"id":"39be67bf-264e-4f30-b59a-a4fdfb9aec64","keyword":"SEM","originalKeyword":"SEM"},{"id":"d68711e2-5794-48d8-9e7e-a525fdeb3502","keyword":"XRD","originalKeyword":"XRD"}],"language":"zh","publisherId":"1001-0777_2009_1_14","title":"两种ITO<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的比较研究","volume":"27","year":"2009"},{"abstractinfo":"研究了<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>不同加工工艺的组织,通过多向锻造,在变形量为80％,热处理工艺为1 050℃×90 min,制得的<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>具有均匀的等轴晶组织,晶粒尺寸40-100 μm.","authors":[{"authorName":"张国军","id":"823a124b-2d16-4acc-b394-302e510d2244","originalAuthorName":"张国军"},{"authorName":"汪凯","id":"d1612475-54e8-496b-9ce0-388f98b3415d","originalAuthorName":"汪凯"},{"authorName":"李桂鹏","id":"2f390795-c66c-4e01-954d-01afca8fecba","originalAuthorName":"李桂鹏"},{"authorName":"任晓","id":"918884b7-1bd3-4063-8ef8-eb6d50c7e532","originalAuthorName":"任晓"}],"doi":"","fpage":"54","id":"1afd3119-0b42-4aed-85e5-d25ca50dc31e","issue":"6","journal":{"abbrevTitle":"CLKFYYY","coverImgSrc":"journal/img/cover/CLKFYYY.jpg","id":"10","issnPpub":"1003-1545","publisherId":"CLKFYYY","title":"材料开发与应用"},"keywords":[{"id":"be8209c4-a7c3-4f77-b863-2ac6c28acc4c","keyword":"旋转镀膜铌<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>","originalKeyword":"旋转镀膜铌靶材"},{"id":"e1d44add-2ca2-4eed-927a-332a0a7a7810","keyword":"工艺控制","originalKeyword":"工艺控制"},{"id":"963d3e1a-3811-4a09-a1a6-5ff20b762227","keyword":"晶粒尺寸","originalKeyword":"晶粒尺寸"}],"language":"zh","publisherId":"clkfyyy201406010","title":"旋转镀膜铌<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>加工工艺研究","volume":"29","year":"2014"},{"abstractinfo":"以硫化镉（CdS ）为主要原料，氯化镉（C dC l2）为助熔剂，采用干压成型、真空烧结的方式制备CdS陶瓷<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>。探讨了原料性质、烧结温度、CdCl2添加量对<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>相对密度、烧结线收缩率、显气孔率及表面电阻率的影响。用阿基米德法测定<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>密度、用四探针测试仪测试<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>表面电阻率、用X RD测试<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>晶相结构、用SEM 观察<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>微观形貌。实验结果表明，<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>试样的晶相主要为六方相CdS ，晶粒均匀（晶粒大小在3～8μm之间），密度达到45．5 g／cm3，显气孔率45．9％，表面电阻率892．Ω?cm ，能满足磁控溅射镀膜工艺对<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的指标要求。","authors":[{"authorName":"董雪振","id":"4e518568-2bd4-4f87-ab5e-5975f4c7217c","originalAuthorName":"董雪振"},{"authorName":"吴任平","id":"2eee80c9-4138-4248-88c9-15fae896ec35","originalAuthorName":"吴任平"}],"doi":"10.3969/ji.ssn1.001-97312.0151.70.31","fpage":"17140","id":"57138212-375f-4833-b9f0-f0ab03749ffe","issue":"17","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"d127ff23-f9ea-4bcd-8226-8163acfab96f","keyword":"CdS","originalKeyword":"CdS"},{"id":"6c7897ee-57c7-442a-a959-f382b90cd4a1","keyword":"陶瓷<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>","originalKeyword":"陶瓷靶材"},{"id":"c189e081-3468-4415-bfaa-87c29b437fa2","keyword":"太阳能薄膜电池","originalKeyword":"太阳能薄膜电池"}],"language":"zh","publisherId":"gncl201517031","title":"硫化镉陶瓷<span style=\"color:red\">靶</span><span style=\"color:red\">材</span>的制备与性能表征","volume":"","year":"2015"}],"totalpage":493,"totalrecord":4930}