{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"本文对在<span style=\"color:red\">等离子体刻蚀</span>工艺中,功率、压强、气体比例重要参数对 a-Si <span style=\"color:red\">刻蚀</span>均一性的影响进行了研究。采用PECVD 成膜、RIE <span style=\"color:red\">等离子体刻蚀</span>,并通过台阶仪和光谱膜厚测定仪对膜厚进行表征。结果表明压强在10~15 Pa,功率在5500~6500 W 的参数区间,a-Si <span style=\"color:red\">刻蚀</span>均一性波动不大,适合工业化生产。a-Si <span style=\"color:red\">刻蚀</span>速率及<span style=\"color:red\">刻蚀</span>均一性对气体比例较为敏感,SF6∶HCl＝800∶2800 mL/min 时 a-Si <span style=\"color:red\">刻蚀</span>均一性为最佳。四角排气方式对维持<span style=\"color:red\">等离子体</span>浓度作用明显,有利于<span style=\"color:red\">刻蚀</span>均一性的提升。四周排气方式会破坏<span style=\"color:red\">等离子体</span>浓度进而破坏 a-Si <span style=\"color:red\">刻蚀</span>的均一性。","authors":[{"authorName":"张立祥","id":"523618e4-3714-4538-a07a-cc035b3d21e5","originalAuthorName":"张立祥"},{"authorName":"王海涛","id":"bd260286-1a6c-4f64-b817-6048874c0cc7","originalAuthorName":"王海涛"},{"authorName":"王尤海","id":"47a62b0b-c4db-4279-8533-6f46e3829eb2","originalAuthorName":"王尤海"},{"authorName":"夏庆峰","id":"8f0922b7-c6c5-4405-9d4e-1ebb9a6623db","originalAuthorName":"夏庆峰"}],"doi":"10.3788/YJYXS20163112.1112","fpage":"1112","id":"e92be487-9d97-49ed-96af-541a92a9b4f2","issue":"12","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"d837513f-8737-4572-b1bb-165faf1a77cf","keyword":"<span style=\"color:red\">等离子体刻蚀</span>","originalKeyword":"等离子体刻蚀"},{"id":"8287e46d-cf3c-40d0-8160-00ceb756c189","keyword":"a-Si","originalKeyword":"a-Si"},{"id":"5c27feb9-2ff1-45c9-a265-88d7b826f196","keyword":"均一性","originalKeyword":"均一性"},{"id":"3e82f15f-f5fc-4b67-b96c-785be86bf258","keyword":"排气方式","originalKeyword":"排气方式"}],"language":"zh","publisherId":"yjyxs201612002","title":"排气方式及工艺参数对<span style=\"color:red\">等离子体刻蚀</span>a-Si 均一性的影响","volume":"31","year":"2016"},{"abstractinfo":"本文详细研究了采用Cl2/H2<span style=\"color:red\">刻蚀</span>气体时,ICP<span style=\"color:red\">刻蚀</span>系统对InP/InGaAsP材料表面损伤的影响.通过设计特殊结构的InP/InGaAsP多量子阱结构,测量<span style=\"color:red\">刻蚀</span>区域及非<span style=\"color:red\">刻蚀</span>区域的光荧光强度的变化,并结合高斯深度分布模型对<span style=\"color:red\">刻蚀</span>损伤进行定量研究.详细研究ICP<span style=\"color:red\">刻蚀</span>系统中的压强、ICP功率、RF功率以及Cl1/H2<span style=\"color:red\">刻蚀</span>气体组分对损伤程度的影响.基于这些结果优化得到一组低损伤参数,最终实现<span style=\"color:red\">刻蚀</span>损伤深度小于16nm.","authors":[{"authorName":"董雷","id":"fb0826f6-6c1d-4d92-804f-22ce30ad1aa1","originalAuthorName":"董雷"},{"authorName":"张瑞康","id":"973c9522-526e-4d40-ba72-19dd7eaae3b8","originalAuthorName":"张瑞康"},{"authorName":"江山","id":"7dbf94a2-1c5e-4836-a6ab-1a668a8e9e06","originalAuthorName":"江山"},{"authorName":"赵圣之","id":"10c99e5f-4aba-40a6-9e8e-4ce6a75966b4","originalAuthorName":"赵圣之"},{"authorName":"刘水华","id":"80ab5b9e-b035-4194-adbb-61c2347d1fbd","originalAuthorName":"刘水华"}],"doi":"10.3969/j.issn.1007-4252.2010.03.009","fpage":"243","id":"2d114d92-f4d8-44a4-bf96-2b9646bac9d5","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"f414ecc4-4b5d-4f43-8239-8f05fde78bda","keyword":"<span style=\"color:red\">等离子体刻蚀</span>","originalKeyword":"等离子体刻蚀"},{"id":"a3d6aa1b-0276-41bb-b9f2-5f0ed3276dd4","keyword":"干法<span style=\"color:red\">刻蚀</span>损伤","originalKeyword":"干法刻蚀损伤"},{"id":"83db596d-9dad-4af4-b070-a0350078d370","keyword":"感应耦合<span style=\"color:red\">等离子体</span>","originalKeyword":"感应耦合等离子体"},{"id":"8af9fb98-3b72-4892-80b2-d8d165b3eea5","keyword":"光荧光","originalKeyword":"光荧光"}],"language":"zh","publisherId":"gnclyqjxb201003009","title":"InP/InGaAsP异质结ICP<span style=\"color:red\">刻蚀</span>表面损伤","volume":"16","year":"2010"},{"abstractinfo":"通过自行设计的冷<span style=\"color:red\">等离子体</span>粉粒纯化系统,将硅粉撒进辉光放电区,以Ar气为反应气体,利用鞘层区域辉光放电的冷<span style=\"color:red\">等离子体</span>对硅粉料的作用,进行一系列的处理后,硅粉表面形貌平整度明显提高,纯度从98.75 9,6提高到99.56%.在此基础上,设计射频感应放电<span style=\"color:red\">等离子体</span>的振动倾斜反应室,经实验,将硅粉纯度提高到99.96 9,6,接近太阳级硅的要求,也为该研究未来的发展提供了新的思路和理论参考.","authors":[{"authorName":"尹盛","id":"28ce3acf-d202-4cd3-a67f-b3df2b1fb59c","originalAuthorName":"尹盛"},{"authorName":"曹伯承","id":"3c59f2c3-6eac-42a2-bc6c-65df7b8d4c5d","originalAuthorName":"曹伯承"},{"authorName":"赵亮","id":"82152de3-e745-4afc-9224-a77ff5c9d99e","originalAuthorName":"赵亮"},{"authorName":"王敬义","id":"62ec3683-0370-46da-8eb7-993246f3cd79","originalAuthorName":"王敬义"}],"doi":"","fpage":"400","id":"f3d68b1e-eafa-4c9a-b023-6fd5ea238ec0","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"dfc5513f-c58e-4d47-bb78-25812a6aaa5c","keyword":"冷<span style=\"color:red\">等离子体</span>","originalKeyword":"冷等离子体"},{"id":"0e288a36-c8d8-4435-97c1-ab0f9069253e","keyword":"冶金级硅","originalKeyword":"冶金级硅"},{"id":"91740605-819f-48f4-8f08-73c5449c8dcc","keyword":"<span style=\"color:red\">刻蚀</span>","originalKeyword":"刻蚀"},{"id":"0e7ea519-e9be-4743-9519-6494a1351bba","keyword":"射频","originalKeyword":"射频"}],"language":"zh","publisherId":"gncl200903016","title":"<span style=\"color:red\">等离子体刻蚀</span>提纯冶金硅研究","volume":"40","year":"2009"},{"abstractinfo":"深入研究了掩膜制作工艺对电感耦合<span style=\"color:red\">等离子体刻蚀</span>的InP端面的影响.首先比较了光刻胶、SiO2和Si3N4三种材料的掩膜特性,发现掩膜图形的致密性、侧壁粗糙度和垂直度等对<span style=\"color:red\">刻蚀</span>效果具有至关重要的影响.然后通过优化SF6<span style=\"color:red\">等离子体刻蚀</span>Si3N4的条件,得到了边缘平整且侧壁垂直的掩膜图形.利用这一掩膜制作技术,获得了深度达7μm的光滑垂直的InP<span style=\"color:red\">刻蚀</span>端面,选择比达15:1.","authors":[{"authorName":"王健","id":"6796fbb8-3dcc-4768-b3a2-d9b055af197f","originalAuthorName":"王健"},{"authorName":"熊兵","id":"6b88e46b-2656-4e33-b83b-fa7ae1692280","originalAuthorName":"熊兵"},{"authorName":"孙长征","id":"41bbb9bc-8440-4f56-9999-a48105b2162e","originalAuthorName":"孙长征"},{"authorName":"郝智彪","id":"b45586d9-59a3-4bb4-879f-f76febff26e4","originalAuthorName":"郝智彪"},{"authorName":"罗毅","id":"2cc542f8-c9d1-4398-8a48-093038fee699","originalAuthorName":"罗毅"}],"doi":"10.3969/j.issn.1007-4252.2003.04.014","fpage":"432","id":"91633842-4636-467d-ad74-e4fd6f3e7996","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"71378bba-a509-4f85-b301-4e5cb786f7e5","keyword":"干法<span style=\"color:red\">刻蚀</span>","originalKeyword":"干法刻蚀"},{"id":"e32af7f0-b037-4291-b55b-b5d3d1290f95","keyword":"掩膜","originalKeyword":"掩膜"},{"id":"4105e370-f565-4220-b19b-dbe7f13486c7","keyword":"ICP","originalKeyword":"ICP"},{"id":"93ce9f59-f8e2-4bb0-bbf1-aa76766eb9ff","keyword":"InP","originalKeyword":"InP"},{"id":"d9626b0f-6f7e-48db-8b2b-8eac5d41ce58","keyword":"<span style=\"color:red\">刻蚀</span>端面","originalKeyword":"刻蚀端面"}],"language":"zh","publisherId":"gnclyqjxb200304014","title":"电感耦合<span style=\"color:red\">等离子体刻蚀</span>InP端面的掩膜特性研究","volume":"9","year":"2003"},{"abstractinfo":"用<span style=\"color:red\">等离子体刻蚀</span>(PE)工艺,以四氟化碳(CF4)和六氟化硫(SF6)以及它们与氧气(O2)的混合气体作为<span style=\"color:red\">刻蚀</span>气体分别对Si基外延生长的β-SiC单晶薄膜进行了<span style=\"color:red\">刻蚀</span>工艺研究.结果表明在同样<span style=\"color:red\">刻蚀</span>工艺条件下,以SF6+O2作为<span style=\"color:red\">刻蚀</span>气体要比以CF4+O2作为<span style=\"color:red\">刻蚀</span>气体具有更高的<span style=\"color:red\">刻蚀</span>速率;在任何气体混合比条件下经SF6+O2<span style=\"color:red\">刻蚀</span>后的样品表面都不会产生富碳(C)表面的残余SiC层;而经CF4+O2<span style=\"color:red\">刻蚀</span>后的样品表面是否产生富C表面残余SiC层则与气体混合比条件有关,但<span style=\"color:red\">刻蚀</span>后的样品表面更为细腻.文中还对不同<span style=\"color:red\">刻蚀</span>气体下的<span style=\"color:red\">刻蚀</span>产物进行了讨论比较.","authors":[{"authorName":"柴常春","id":"ffec9ca9-c49e-4470-9de0-84bb62ea52a0","originalAuthorName":"柴常春"},{"authorName":"杨银堂","id":"3168c3c9-96c5-4347-91a5-0683a08a1d46","originalAuthorName":"杨银堂"},{"authorName":"李跃进","id":"fa6ff5bf-1e2d-4a83-b63f-ae0de892fb31","originalAuthorName":"李跃进"},{"authorName":"贾护军","id":"3fc52b89-11d4-4bd6-8d53-f7514b886fa5","originalAuthorName":"贾护军"}],"doi":"","fpage":"172","id":"7d6b7266-4f41-4562-a918-a65296ca4995","issue":"2","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"d37ed4e3-105f-4d01-a969-b66788035e6c","keyword":"SiC薄膜","originalKeyword":"SiC薄膜"},{"id":"1782e9fb-40a3-42cc-9cc0-018cfca14838","keyword":"<span style=\"color:red\">等离子体刻蚀</span>(PE)","originalKeyword":"等离子体刻蚀(PE)"},{"id":"3953dbfd-923d-46c6-9ca3-56609ffd2a20","keyword":"<span style=\"color:red\">刻蚀</span>气体","originalKeyword":"刻蚀气体"}],"language":"zh","publisherId":"gncl200102024","title":"硅基外延β-SiC薄膜在不同<span style=\"color:red\">刻蚀</span>气体中的<span style=\"color:red\">等离子体刻蚀</span>研究","volume":"32","year":"2001"},{"abstractinfo":"采用Cl2/Ar感应耦合<span style=\"color:red\">等离子体</span>对InP进行了<span style=\"color:red\">刻蚀</span>.讨论了直流自偏压、ICP功率、气体总流量和气体组分等因素对<span style=\"color:red\">刻蚀</span>速率和粗糙度的影响.结果表明Cl2/Ar气体组分是决定<span style=\"color:red\">刻蚀</span>效果的重要因素.当Cl2含量为30%左右时,<span style=\"color:red\">刻蚀</span>中的物理溅射与化学反应过程趋于平衡,<span style=\"color:red\">刻蚀</span>速率处于峰值区,同时<span style=\"color:red\">刻蚀</span>粗糙度也可达到最小值.SEM照片显示<span style=\"color:red\">刻蚀</span>表面光洁,侧壁陡直.","authors":[{"authorName":"朱海波","id":"137aa945-522c-41c5-9f20-1e887622c498","originalAuthorName":"朱海波"},{"authorName":"李晓良","id":"cddd2b94-75b6-455a-8d51-637bba064cb8","originalAuthorName":"李晓良"}],"doi":"10.3969/j.issn.1007-4252.2005.03.025","fpage":"377","id":"bf672fe5-f2a2-4c6e-9862-42b3e1dc309b","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"affef9c0-7c9d-4781-bad7-d28d5c2ccbb7","keyword":"干法<span style=\"color:red\">刻蚀</span>","originalKeyword":"干法刻蚀"},{"id":"f41cc89c-3451-42a5-98e6-2950d270b3ff","keyword":"感应耦合<span style=\"color:red\">等离子体</span>","originalKeyword":"感应耦合等离子体"},{"id":"d7f5c3d2-b657-4624-9e69-1bc40900d610","keyword":"InP","originalKeyword":"InP"},{"id":"fa5d19de-a153-4c8f-b5a3-d69f57175d52","keyword":"<span style=\"color:red\">刻蚀</span>速率","originalKeyword":"刻蚀速率"},{"id":"69a87952-5fc7-4487-ac40-bcecc0d1d516","keyword":"粗糙度","originalKeyword":"粗糙度"}],"language":"zh","publisherId":"gnclyqjxb200503025","title":"Cl2/Ar感应耦合<span style=\"color:red\">等离子体刻蚀</span>InP工艺研究","volume":"11","year":"2005"},{"abstractinfo":"用HFCVD法在硬质合金（YG6）刀具衬底上沉积金刚石薄膜，用氢微波<span style=\"color:red\">等离子体刻蚀</span>的方法\n对衬底进行表面预处理，研究了该预处理技术对WC硬质合金衬底表面成分的影响。进一步探\n讨了所沉积金刚石薄膜的表面形貌和附着力，并通过难加工材料实际切削试验，研究了所制备的\n金刚石薄膜涂层刀具的切削性能。试验结果表明，Ar－H2微波<span style=\"color:red\">等离子体刻蚀</span>脱碳处理是提高金刚\n石薄膜附着力和改善涂层刀具切削性能的有效预处理方法。","authors":[{"authorName":"孙方宏","id":"61a47ad3-6d5b-44ca-aca9-615f957f60be","originalAuthorName":"孙方宏"},{"authorName":"陈明","id":"145b733d-1f28-4485-9655-eec6c3784587","originalAuthorName":"陈明"},{"authorName":"张志明","id":"c65ac322-a4ad-4eca-9ce7-e321a2ce1db7","originalAuthorName":"张志明"},{"authorName":"沈荷生","id":"ed5e67d7-5126-4a82-95e4-08030af9b0c6","originalAuthorName":"沈荷生"}],"doi":"10.3969/j.issn.1007-4252.2001.03.002","fpage":"222","id":"f035919f-1050-4dfb-a2b6-423f8f818d82","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"f840a4cf-9a27-4d7f-a033-4ebd9791a1bf","keyword":"CVD金刚石薄膜","originalKeyword":"CVD金刚石薄膜"},{"id":"3e2d9943-bb45-4841-9670-9c77a21719e2","keyword":"微波<span style=\"color:red\">等离子体</span>","originalKeyword":"微波等离子体"},{"id":"fbc27c21-06dd-46d8-8c18-755dbbff7c0e","keyword":"附着力","originalKeyword":"附着力"},{"id":"ccffd5de-e5c6-441a-a9b9-27e56b437732","keyword":"切削性能","originalKeyword":"切削性能"}],"language":"zh","publisherId":"gnclyqjxb200103002","title":"微波<span style=\"color:red\">等离子体刻蚀</span>处理对金刚石薄膜涂层刀具附着力和切削性能的影响","volume":"7","year":"2001"},{"abstractinfo":"用直流辉光<span style=\"color:red\">等离子体</span>化学气相沉积制备金刚石厚膜,用氢的微波<span style=\"color:red\">等离子体</span>对其抛光截面进行<span style=\"color:red\">刻蚀</span>,研究了晶界对金刚石厚膜耐磨性的影响.结果表明:在金刚石膜的生长过程中,随着甲烷流量的增加,金刚石膜的晶界从纵向排列为主过渡到网状结构,晶粒内部缺陷逐渐增加,杂质、空洞主要分布于晶界处.金刚石膜的磨耗比随着晶界密度、宽度、杂质含量及晶粒内部缺陷的增加而下降.晶界是杂质、空洞主要富集区,是影响金刚石厚膜耐磨性的主要因素.","authors":[{"authorName":"姜志刚","id":"5ac903ca-993e-425e-8218-94cee560e862","originalAuthorName":"姜志刚"},{"authorName":"冯玉玲","id":"170df6a2-53fb-4d4f-8799-297b5990e6c2","originalAuthorName":"冯玉玲"},{"authorName":"纪红","id":"adeed67b-0f06-445b-9282-fa9b656ed43b","originalAuthorName":"纪红"},{"authorName":"郑涛","id":"0678eabf-7a6f-49fa-87f1-04f42f5f8499","originalAuthorName":"郑涛"},{"authorName":"杨传经","id":"c4159440-f2eb-4a2d-b3e9-218a1becc7e8","originalAuthorName":"杨传经"},{"authorName":"李博","id":"5b29f3c3-9608-4a5c-a15f-8bbfe5660736","originalAuthorName":"李博"},{"authorName":"金曾孙","id":"a23b5ee7-2cf2-4523-abae-677f87a3394a","originalAuthorName":"金曾孙"}],"doi":"10.3321/j.issn:1005-3093.2006.03.007","fpage":"255","id":"75264b4d-ad63-44a9-b6df-40bc5c225d44","issue":"3","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"30ec5fbe-cd4f-43f6-996b-101d52ca3bf8","keyword":"无机非金属材料","originalKeyword":"无机非金属材料"},{"id":"5897b722-e620-49cf-9ea7-8df004db59e3","keyword":"金刚石厚膜","originalKeyword":"金刚石厚膜"},{"id":"c4dc91ee-cbdf-4c69-a1c6-18d7661b4981","keyword":"<span style=\"color:red\">等离子体刻蚀</span>","originalKeyword":"等离子体刻蚀"},{"id":"7e396e9d-e0ed-4720-abdc-8159e2676933","keyword":"晶界","originalKeyword":"晶界"},{"id":"0ad12630-933b-4f27-8315-a7d2a307d731","keyword":"耐磨性","originalKeyword":"耐磨性"}],"language":"zh","publisherId":"clyjxb200603007","title":"金刚石厚膜的晶界对耐磨性的影响","volume":"20","year":"2006"},{"abstractinfo":"石墨烯由于其独特的电学特性受到关注,工艺的研究促使石墨烯材料的实际应用。着重于石墨烯场效应管关键工艺(目标衬底的预处理、石墨烯的转移、金属沉积、石墨烯<span style=\"color:red\">刻蚀</span>与退火)的优化。通过实验发现,衬底上硅醇基的密度以及碳氢化合物分子的大小对器件的性能有很大的影响；与热蒸发方式相比,溅射会对石墨烯引入更多的缺陷,降低器件性能；金属上石墨烯的接触电阻率为1.1×104Ω·μm,而金属下石墨烯的电阻率为2.4×105Ω·μm；应用射频和微波<span style=\"color:red\">等离子体</span>系统对石墨烯进行<span style=\"color:red\">刻蚀</span>,微波<span style=\"color:red\">等离子体</span>会造成石墨烯上的光刻胶碳化,使得光刻胶很难用丙酮去除；器件制备完成后,样品需要在(H2/Ar)还原性气氛中退火,以除去吸附在石墨烯表面的杂质,提高器件的性能。","authors":[{"authorName":"张凤","id":"d6ab26cd-49e4-4074-a74d-cc8ce8b0cf9f","originalAuthorName":"张凤"},{"authorName":"方新心","id":"523ae6de-6dc2-4750-bb52-69f5ecb3d536","originalAuthorName":"方新心"},{"authorName":"成霁","id":"78f344d7-1b6e-4ce0-a485-1aee60b3fe5d","originalAuthorName":"成霁"},{"authorName":"唐逢杰","id":"8b2ccecd-17b4-41ef-8b38-53f2f531731d","originalAuthorName":"唐逢杰"},{"authorName":"金庆辉","id":"a318813b-5aa3-46b3-b58b-1d8fe47754a5","originalAuthorName":"金庆辉"},{"authorName":"赵建龙","id":"137145ab-a315-42bc-a94a-0cfa3db1ba1f","originalAuthorName":"赵建龙"}],"doi":"10.3969/j.issn.1001-9731.2013.增刊(Ⅱ).037","fpage":"344","id":"2105f74a-b170-4eeb-b02e-2334021c5426","issue":"z2","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"c485f53d-c312-4403-b5cf-4296f23fbbb1","keyword":"石墨烯","originalKeyword":"石墨烯"},{"id":"0ea4dbd4-6cc0-40c2-b9a9-5fe332ee3821","keyword":"溅射","originalKeyword":"溅射"},{"id":"4d25b8f1-8fd4-4d82-89c6-b5259cc305d5","keyword":"热蒸发","originalKeyword":"热蒸发"},{"id":"9595cbe9-8dc3-4cdf-af14-b87d15ca8240","keyword":"石墨烯转移","originalKeyword":"石墨烯转移"},{"id":"fc015916-74b5-4b54-93e1-13fa45c5a8c2","keyword":"<span style=\"color:red\">等离子体刻蚀</span>","originalKeyword":"等离子体刻蚀"}],"language":"zh","publisherId":"gncl2013z2037","title":"硅基石墨烯场效应管关键工艺研究","volume":"","year":"2013"},{"abstractinfo":"目的 通过<span style=\"color:red\">等离子</span><span style=\"color:red\">刻蚀</span>处理使基体表面更洁净,从而提高薄膜与基体的结合力.方法 采用阳极层<span style=\"color:red\">离子</span>源,通过不同的<span style=\"color:red\">离子</span>源功率和处理时间对M50轴承钢样品进行处理,并在处理过的样品表面制备钨掺杂类金刚石薄膜.利用原子力显微镜对<span style=\"color:red\">等离子</span><span style=\"color:red\">刻蚀</span>处理前后的样品表面形貌进行研究,利用Raman光谱分析薄膜的微观结构,利用划痕仪对薄膜与基体的结合力进行研究.结果 不同的<span style=\"color:red\">离子</span>源功率和<span style=\"color:red\">刻蚀</span>时间,得到了不同的基体微观表面粗糙度;钨掺杂类金钢石薄膜的D峰和G峰分别在1350 cm?1附近和1580 cm?1附近,为典型的类金刚石结构,ID/IG值在1.5左右;未经<span style=\"color:red\">等离子</span><span style=\"color:red\">刻蚀</span>前处理样品的膜/基结合力是23 N;而优化<span style=\"color:red\">等离子</span><span style=\"color:red\">刻蚀</span>前处理参数样品的膜/基结合力高达69 N,最佳的<span style=\"color:red\">离子</span>源功率和<span style=\"color:red\">刻蚀</span>时间为2 kW、60 min.结论 <span style=\"color:red\">等离子</span><span style=\"color:red\">刻蚀</span>前处理能够有效提高薄膜与基体的结合力.","authors":[{"authorName":"李振东","id":"9dfe3962-43b7-4614-ae7c-2fc2f0f40c83","originalAuthorName":"李振东"},{"authorName":"詹华","id":"a902ce8a-81d5-4240-93e8-beadabef0571","originalAuthorName":"詹华"},{"authorName":"王亦奇","id":"7eca85db-b7c0-48f6-9f36-3a5926eab1d3","originalAuthorName":"王亦奇"},{"authorName":"汪瑞军","id":"6ef6e5c0-afeb-434a-b066-cabc5c0ea25f","originalAuthorName":"汪瑞军"},{"authorName":"王伟平","id":"2b95c696-f0ab-4427-8043-d41a8046577b","originalAuthorName":"王伟平"}],"doi":"10.16490/j.cnki.issn.1001-3660.2017.01.011","fpage":"64","id":"1ca134fc-80fd-498a-ad14-c996e3acfb87","issue":"1","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术   "},"keywords":[{"id":"2d9c4465-3fb5-40a1-8bd2-35d03bce88cf","keyword":"<span style=\"color:red\">等离子</span><span style=\"color:red\">刻蚀</span>","originalKeyword":"等离子刻蚀"},{"id":"8dda9965-31a4-44c2-b744-b58666840f69","keyword":"阳极层<span style=\"color:red\">离子</span>源","originalKeyword":"阳极层离子源"},{"id":"13f1c741-800d-4da4-a2e3-116398b4879c","keyword":"M50轴承钢","originalKeyword":"M50轴承钢"},{"id":"c40cb77a-98f9-4528-aec2-4e89c0424cd7","keyword":"钨掺杂类金刚石薄膜","originalKeyword":"钨掺杂类金刚石薄膜"},{"id":"6dd5d5bf-2c1b-4c99-bf83-ee83f77c1da5","keyword":"<span style=\"color:red\">离子</span>源功率","originalKeyword":"离子源功率"}],"language":"zh","publisherId":"bmjs201701011","title":"<span style=\"color:red\">等离子体刻蚀</span>前处理对碳基薄膜结合力的影响","volume":"46","year":"2017"}],"totalpage":4172,"totalrecord":41715}